BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 This product is available only outside of Japan. zExternal dimensions (Units : mm) zApplication Ultra high speed switching 2.90.2 2.40.2 1.3+0.2 -0.1 ROHM : SSD3 EIAJ : - JEDEC : SOT-23 zMarking (Type No.) Type No. BAV70 RA4 BAW56 RA1 BAV99 RA7 (Ex.) BAV70 RA4 zCircuits BAV70 0.450.1 0.95 0.95 (All leads have the same dimensions.) 0.15 +0.1 -0.69 0.4 +0.1 -0.05 zConstruction Silicon epitaxial planar Product name 0.95 +0.2 -0.1 1.90.2 zFeatures 1) Small surface mounting type. (SSD3) 2) High speed. (trr=1.5ns Typ.) 3) Four types of circuit configurations are available. BAW56 BAV99 0~0.1 0.2Min. BAV70 / BAW56 / BAV99 Diodes zAbsolute maximum ratings (Ta=25C) Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) Mean rectifying current IO (mA) Surge current (1s) Isurge (A) BAV70 75 70 450 - 4 300 150 -55~+150 BAW56 85 70 450 - 4 225 150 -55~+150 P BAV99 85 75 450 - 4 300 150 -55~+150 N Type Storage Power Junction dissipation temperature temperature (TOTAL) Tj (C) Tstg (C) Pd (mW) P / N Type N zElectrical characteristics (Ta=25C) Forward voltage Type VF (V) Max. BAV70 Capacitance between terminals Reverse current Cond. IF (mA) IR (A) Max. 1.25 150 BAW56 1.25 BAV99 1.25 Cond. Cond. VR (V) CT (pF) Max. VR (V) 2.5 70 1.5 150 1.0 75 150 1.0 75 Reverse recovery time Cond. f (MHz) trr (ns) Max. VR (V) IF (mA) 0 1 4 10 10 2.0 0 1 4 10 10 1.5 0 1 4 10 10 zElectrical characteristic curves (Ta=25C) 125 1000 Ta=100C 100 75 50 25 20 REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF (mA) Ta=85C 50C 25C 0C -30C 10 5 2 1 0.5 75C 50C 10 25C 0C 1 -25C 0.1 0.2 0 0 25 50 75 100 125 0.1 150 0 AMBIENT TEMPERATURE : Ta (C) Fig.1 Power attenuation curve 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 REVERSE CURRENT : IR (nA) Ta=85C 50C 25C 0C -30C 10 5 2 1 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 30 40 Fig.3 Reverse characteristics (P Type) Ta=100C 75C 100 50C 10 25C 0C 1 -25C 0.1 0.01 0 20 Fig.2 Forward characteristics (P Type) 0.2 0.1 10 0 REVERSE VOLTAGE : VR (V) 1000 20 0.01 FORWARD VOLTAGE : VF (V) 50 FORWARD CURRENT : IF (mA) 100 CAPACITANCE BETWEEN TERMINALS : CT (pF) POWER DISSIPATION : Pd / Pd Max. (%) 50 10 20 30 40 50 60 70 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics (N Type) Fig.5 Reverse characteristics (N Type) 80 50 f=1MHz 4 2 P Type N Type 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE : VR (V) Fig.6 Capacitance between terminals characteristics BAV70 / BAW56 / BAV99 Diodes 0.01F 10 D.U.T 8 5 PULSE GENERATOR OUTPUT 50 7 SAMPLING 50 OSCILLOSCOPE 6 5 4 INPUT P Type 3 2 N Type 1 0 1 2 3 4 5 6 7 8 9 100ns 10 FORWARD CURRENT : IF (mA) OUTPUT trr Fig.7 Reverse recovery time 0 0.1IR 0 IR REVERSE RECOVERY TIME : trr (ns) VR=6V 9 Fig.8 Reverse recovery time (trr) measurement circuit