BAV70 / BAW56 / BAV99
Diodes
Switching diode
BAV70 / BAW56 / BAV99
∗This product is available only outside of Japan.
z
zz
zApplication
Ultra high speed switching
z
zz
zFeatures
1) Small surface mounting type. (SSD3)
2) High speed. (trr=1.5ns T yp.)
3) Four types of circuit configurations are available.
z
zz
zConstruction
Silicon epitaxial planar
z
zz
zExternal dimensions (Un its : mm)
0~0.1
0.2Min.
2.4±0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.69
+0.1
−0.05
(All leads have the
same dimensions.)
ROHM : SSD3
EIAJ : −
JEDEC : SOT-23
z
zz
zMarking (Type N o.)
Product name Type No.
RA4
RA7
RA1
BAV70
BAW56
BAV99
(Ex.) BAV70 RA4
z
zz
zCircuits
BAV70 BAW56 BAV99
BAV70 / BAW56 / BAV99
Diodes
z
zz
zAbsolute maximum ratings (Ta=25°C)
P / N Type
Peak
reverse
voltage
VRM (V)
DC
reverse
voltage
VR (V)
Peak
forward
current
IFM (mA)
Mean
rectifying
current
IO (mA)
Surge
current
(1µs)
I
surge
(A)
Power
dissipation
(TOTAL)
Pd (mW)
Junction
temperature
Tj (°C)
Storage
temperature
Tstg (°C)
Type
BAV70
BAW56
BAV99
75
85
85
70
70
75
450
450
450
−
−
−
4
4
4
300
225
300
150
150
150
−55~+150
−55~+150
−55~+150
N
P
N
z
zz
zElectrical characteristics (Ta=25°C)
Type
BAV70
BAW56
BAV99
1.25
1.25
1.25
150
150
150
2.5
1.0
1.0
70
75
75
1.5
2.0
1.5
0
0
0
1
1
1
4
4
4
10
10
10
10
10
10
V
F
(V)
Max. Cond.
I
F
(mA) I
R
(µA)
Max. Cond.
V
R
(V) C
T
(pF)
Max. Cond.
V
R
(V) f (MHz) t
rr
(ns)
Max. Cond.
V
R
(V) I
F
(mA)
Forward voltage Reverse current
Capacitance between terminals
Reverse recovery time
z
zz
zElectrical characteristic curves (Ta=25°C)
0
25
50
75
100
125
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : T
a (
°C)
POWER DISSIPATION : Pd / Pd
Max. (%)
Fig.1 Power attenuation curve
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
50
20
10
5
2
1
0.5
0.2
0.1
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.2 Forward characteristics
(P Type)
Ta=85°C
50°C
25°C
0°C
−30°C
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(nA)
0.01
100
1000
10
0.1
1
10 20 30 40 50
0
Fig.3 Reverse characteristics
(P Type)
Ta=100°C
75°C
50°C
25°C
0°C
−25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
50
20
10
5
2
1
0.5
0.2
0.1
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.4 Forward characteristics
(N Type)
Ta=85°C
50°C
25°C
0°C
−30°C
REVERSE VOLTAGE : VR (V)
REVERSE CURRENT : IR (nA)
0.01
100
1000
10
0.1
1
10 20 30 40 80706050
0
Fig.5 Reverse characteristics
(N Type)
Ta=100°C
75°C
50°C
25°C
−25°C
0°C
024681012 1614 18 20
4
2
0
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
f=1MHz
Fig.6 Capacitance between
terminals characteristics
P Type
N Type
BAV70 / BAW56 / BAV99
Diodes
0123456 87910
8
4
5
6
7
9
10
1
2
3
0
FORWARD CURRENT : I
F
(mA)
REVERSE RECOVERY TIME : t
rr (
ns)
V
R
=6V
Fig.7 Reverse recovery time
P Type
N Type
5Ω
50Ω
100ns
0.1I
R
0
INPUT
OUTPUT
SAMPLING
OSCILLOSCOPE
PULSE GENERATOR
OUTPUT 50Ω
0.01µF D.U.T
trr
I
R
Fig.8 Reverse recovery time (t
rr
) measurement circuit
