BD235/BD236
BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
■SGS-THOMSONPREFERRED SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD235 BD237
PNP BD236 BD238
VCBO Collector-Base Voltage (IE=0) 60 100 V
V
CER Collector-Base Voltage (RBE =1KΩ)60100V
V
CEO Collector-Emitter Voltage (IB=0) 60 80 V
V
EBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 2 A
ICM Collector Peak Current 6 A
Ptot Total Dissipation at Tc=25o
C25W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
321
SOT-32
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE=0) V
CE =ratedV
CEO
VCE =ratedV
CEO Tc=150o
C0.1
2mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 1 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage IC=100mA
for BD235/BD236
for BD237/BD238 60
80 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=1A I
B= 0.1 A 0.6 V
VBE∗Base-Emitter Voltage IC=1A V
CE =2V 1.3 V
h
FE∗DC Current Gain IC=150mA V
CE =2V
I
C=1 A V
CE =2V 40
25
fTTransition frequency IC=250mA V
CE =10V 3 MHz
h
FE1/hFE2∗Matched Pairs IC=150mA V
CE =2V 1.6
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area DeratingCurves
BD235/BD236/BD237/BD238
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DCCurrent Gain (NPNtype)
Collector-Emitter Saturation Voltage (NPN type)
Base-EmitterSaturationVoltage (NPNtype)
DC Current Gain (PNPtype)
Collector-Emitter Saturation Voltage (PNP type)
Collector-BaseCapacitance (PNP type)
BD235/BD236/BD237/BD238
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD235/BD236/BD237/BD238
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Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patentsor other rightsof third partieswhich may results fromits use.No
license is grantedbyimplicationor otherwise under anypatentor patentrights ofSGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subject to change without notice. This publicationsupersedesand replacesall information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascriticalcomponentsinlifesupportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics -Printed in Italy - All Rights Reserved
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BD235/BD236/BD237/BD238
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