AP622 - WJ Communications, Inc.

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 4 March 2007

AP622

UMTS-band 4W HBT Amplifier Module

Product Features

• 2.11 – 2.17 GHz

• 28 dB Gain

• -55 dBc ACLR @ +23 dBm Pavg

• +35 dBm P1dB

• +28 V Supply

• Power Down Mode

• RoHS-compliant flange-mount pkg

Applications

• WCDMA Power Amplifiers

• Repeaters

Product Description

The AP622 power amplifier module is a two-stage power

amplifier module that operates over the frequency range of

2110 – 2170 MHz and is housed in a small, RoHS-

compliant, flange-mount package. The multi-stage

amplifier module has a 28 dB gain, P1dB of 35dBm, and

ACLR of –55dBc at +23 dBm output power for WCDMA

applications.

The AP622 uses a +28V high reliability InGaP/GaAs HBT

process technology and does not require any external

matching components. The amplifier module operates off a

+28V supply; an internal active bias allows the amplifier to

maintain high linearity over temperature. It has the added

feature of a +5V power down control pin. A low-cost

metal housing allows the device to have a low thermal

resistance to ensure long lifetimes. All devices are 100%

RF and DC tested.

The AP622 is targeted for use as a driver stage amplifier in

wireless infrastructure where high linearity and high power

is required. This combination makes the device an

excellent candidate for next generation multi-carrier 3G

base stations.

Functional Diagram

Top View

Pin No. Function

1 RF Output

2 / 4 Vcc

3 / 5 Vpd

6 RF Input

Case Ground

Specifications

W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA

Parameter Units Min Typ Max

Operational Bandwidth MHz 2110 - 2170

Output Channel Power dBm +23

Power Gain dB 28

ACLR dBc -55

Operating Current, Icc mA 135

Collector Efficiency % 5

Output P1dB dBm +35

Quiescent Current, Icq mA 120

Vpd V +5

Vcc V +28

Absolute Maximum Rating

Parameter Rating

Operating Case Temperature -40 to +85 °C

Storage Temperature -55 to +150 °C

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No. Description

AP622 PCS-band 4W HBT Amplifier Module

1 2 3 4 5 6

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 4 March 2007

AP622

UMTS-band 4W HBT Amplifier Module

Evaluation Board Bias Procedure

The following bias procedure is recommended to ensure proper functionality of AP622 in a laboratory environment. The sequencing is not

required in the final system application.

28V

GND

Turn-on Sequence:

1. Attach input and output loads onto the evaluation board.

2. Turn on power supply Vcc = +28V.

3. Turn on power supply Vpd = +5V.

4. Turn on RF power.

Turn-off Sequence:

1. Turn off RF power.

2. Turn off power supply Vpd = +5V.

3. Turn off power supply Vcc = +28V.

Notes:

1. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier.

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 4 March 2007

AP622

UMTS-band 4W HBT Amplifier Module

Performance Graphs

W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA

Notes:

1. Please note that for reliable operation, the evaluation board will have to

be mounted to a much larger heat sink during operation and in laboratory

environments to dissipate the power consumed by the device. The use of

a convection fan is also recommended in laboratory environments.

Details of the mounting holes used in the WJ heatsink are given on the

last page of this datasheet.

2. The area around the module underneath the PCB should not contain any

soldermask in order to maintain good RF grounding.

3. For proper and safe operation in the laboratory, the power-on sequencing

should be followed:

a. Connect RF In and Out

b. Connect the voltages and ground pins as shown in the circuit.

c. Apply the RF signal

d. Power down with the reverse sequence

Gain vs. Output Power vs. Frequency

WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C

22 23 24 25 26 27

Output Power (dBm)

Gain (dB)

2110 MHz

2140 MHz

2170 MHz

ACLR1 vs. Output Power vs. Frequency

WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C

-60

-55

-50

-45

-40

22 23 24 25 26 27

Average Output Power (dBm)

ACLR1 (dBc)

2110 MHz

2140 MHz

2170 MHz

Efficiency vs. Output Power vs. Frequency

WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C

22 23 24 25 26 27

Average Output Power (dBm)

Collector Efficiency (%)

2110 MHz

2140 MHz

2170 MHz

Icc vs. Output Power

WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C

120

130

140

150

160

170

22 23 24 25 26 27

Output Power (dBm)

Icc (mA)

DNP

10µF

DNP

0Ω

.01

100pF

+28V

GND

+5V

RF IN RF OUT

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 4 March 2007

AP622

UMTS-band 4W HBT Amplifier Module

Outline Drawing

2 3 4 56

AP622

Outline Drawing for the Heatsink with the WJ Evaluation Board