MGA-631P8
Low Noise, High Linearity, Active Bias Low Noise Amplier
Data Sheet
Description
Avago Technologies’ MGA-631P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplier (LNA) with active
bias. The LNA has low noise with excellent input return
loss and high linearity achieved through the use of
Avago Technologies’ proprietary 0.5um GaAs Enhance-
ment-mode pHEMT process. The LNA has an extra feature
that allows a designer to adjust supply current and gain
externally. Due to the high isolation between the input
and output, gain can be adjusted independently through
a resistor in series with a blocking capacitor from the
output pin to FB1 pin, without aecting the noise gure.
It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Thin
Small Leadless Package (TSLP) package. The compact
footprint and low prole coupled with low noise, high
gain, excellent input return loss and high linearity make
the MGA-631P8 an ideal choice as an LNA for cellular in-
frastructure for GSM, CDMA, GPS and ISM applications.
It is designed for optimum use between 400MHz to
1.5GHz. For optimum performance at higher frequency
from 1.4GHz to 3.8GHz, the MGA-632P8 is recommend-
ed. Both MGA-631P8 and MGA-632P8 share the same
package and pinout.
Pin Conguration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead TSLP
Features
• Low noise gure
• Good input return loss
• High linearity performance
• High Isolation
• Externally adjustable supply current, 40-80mA
• Externally adjustable gain, 15-20dB
• GaAs E-pHEMT Technology[1]
• Low cost small package size: 2.0x2.0x0.75 mm3
• Excellent uniformity in product specications
Specications
900MHz; 4V, 54mA (typ)
• 17.5 dB Gain
• 0.53 dB Noise Figure
• -19.4dB S11
• -34dB S12
• 32.6 dBm Output IP3
• 18.0 dBm Output Power at 1dB gain compression
Applications
• Low noise amplier for cellular infrastructure for GSM,
CDMA, GPS and ISM.
• Other ultra low noise applications.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Bottom View
Note:
Pin 1 : not used Pin 5 : FB1
Pin 2 : RFin Pin 6 : not used
Pin 3 : RF ground Pin 7 : RFout
Pin 4 : Vbias Pin 8 : Gnd
Top View
Note:
Package marking provides
orientation and identication
“G1” is Device Code
“X” is month code
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
2
MGA-631P8 Absolute Maximum Rating [1]
Symbol Parameter Units Absolute Max.
Vd Device Supply Voltage V 5.5
Pin,max CW RF Input Power (Vd=4.0V, Vbias=4.0V) dBm 20
Pdiss Total Power Dissipation [2] W 0.55
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance [3] (Vd = 4.0V, Vbias=4.0V), θJC = 47 °C/W
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Board temperature TB is 25 °C. Derate 21.2mW/ °C for TB>124 °C.
3. Thermal resistance measured using Infra-Red Microscopy Technique.
Product Consistency Distribution Charts [4]
4. Distribution data sample size is 500 samples taken from 3 dierent wafer lots. Future wafer allocated to this product may have nominal values
anywhere between the upper and lower limits. Circuit losses have been de-embedded from actual measurements.
Figure 3. Id distribution at 54mA
Figure 2. NF distribution at 54mA
Figure 1. Gain distribution at 54mA
100
200
300
400
500
Count
31 32 33 34 35
OIP3U
CPK Lower = 1.550
Std Dev = 0.369
LSL = 30.8
Nominal = 32.6
Figure 4. OIP3U distribution at 54mA
Process Capability for NF
NF (dB)
Frequency
0.41 0.51 0.61 0.71
0
30
60
90
120
150
CPK=4.04
Std Dev=0.04
Nominal = 0.53,
USL = 1.0
Process Capability for Gain
Gain (dB)
Frequency
16 16.5 17 17.5 18 18.5 19
0
50
100
150
200
250
300 LSL = 16.0,
Nominal = 17.5,
USL = 19.0
CPK Lower = 3.72
CPK Upper = 3.85
Std Dev = 0.13
50
100
150
200
250
Count
40 45 50 55 60 65 70
CPK Lower = 2.45
CPK = 2.68
Std Dev = 1.26
LSL = 41,
Nominal = 54,
USL = 67
Id
3
Typical Electrical Specications at 700MHz [3]
TA = 25 °C, Vd =4V @ 54mA, R1=91ohm unless otherwise specied.
Symbol Parameter and Test Condition Units Typ.
Gain Freq=700MHz Associated Gain dB 17.1
OIP3 Freq=700MHz Output Third Order Intercept Point
(2-tone @ FRF +/- 5MHz, Pin = -20dBm)
dBm 35.7
NF50Ω Freq=700MHz Noise Figure in 50Ω system dB 1.12
OP1dB Freq=700MHz Output Power at 1dB Gain Compression dBm 15.1
IRL Freq=700MHz Input Return Loss dB -12.1
ORL Freq=700MHz Output Return Loss dB -3.2
S12 Freq=700MHz Reverse Isolation dB -38.4
Notes:
3. Measurements obtained using demo board described in Figure 28 and Table 1, List 4. Input and output board losses have been de-embedded.
Electrical Specications [1,2]
TA = 25 °C, Vd =4V @ 54mA, R1=91ohm unless otherwise specied.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Id Operational Current Vbias=4.0V mA 41 54 67
Gain Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Associated Gain dB
16.0
18.4
17.9
17.5 19.0
OIP3 Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Output Third Order Intercept Point
(2-tone @ FRF +/- 5MHz, Pin = -20dBm)
dBm
30.8
34.2
33.8
32.6
NF50Ω Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Noise Figure in 50Ω system dB 0.57
0.51
0.53 1.0
OP1dB Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Output Power at 1dB Gain Compression dBm 18.3
18.0
18.0
IRL Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Input Return Loss dB -20.9
-30.6
-19.4
ORL Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Output Return Loss dB -21.3
-22.1
-22.5
S12 Freq=800 MHz
Freq=850 MHz
Freq=900 MHz
Reverse Isolation dB -34.0
-34.0
-34.0
Notes:
1. Measurements obtained using demo board described in Figure 28 and Table 1, List 1. Input and output board losses have been de-embedded.
2. Guaranteed specications are 100% tested in production test circuit.
4
MGA-631P8 Typical Performance[1]
TA = 25 °C, Vd = 4V, Id = 54mA, R1=91ohm unless stated otherwise.
Notes:
1. Measurements obtained using demo board described in Figure 28 and Table 1, List 1.
Figure 13. NF Vs Frequency and TemperatureFigure 12. Gain Vs Frequency and TemperatureFigure 11. Id Vs Vd and Temperature
Figure 10. OIP3 Vs Id and Vd
Figure 9. NF Vs Id and VdFigure 8. Gain Vs Id and Vd
Figure 7. OIP3 Vs Frequency and IdFigure 6. NF Vs Frequency and IdFigure 5. Gain Vs Frequency and Id
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
780 800 820 840 860 880 900 920
Frequency (GHz)
NF (dB)
20mA
40mA
60mA
80mA
0
5
10
15
20
25
30
35
40
780 800 820 840 860 880 900 920
Frequency (GHz)
OIP3 (dBm)
20mA
40mA
60mA
80mA
3V Vd
4V Vd
5V Vd
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
10 20 30 40 50 60 70 80 90
Id (mA)
NF (dB)
3V Vd
4V Vd
5V Vd
0
5
10
15
20
25
30
35
40
10 20 30 40 50 60 70 80 90
Id (mA)
OIP3 (dBm)
3V Vd
4V Vd
5V Vd
10
11
12
13
14
15
16
17
18
19
780 800 820 840 860 880 900 920
Frequency (GHz)
Gain (dB)
-40°C
25°C
85°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
780 800 820 840 860 880 900 920
Frequency (GHz)
NF (dB)
-40°C
25°C
85°C
0
10
20
30
40
50
60
70
0 1 2 3 4 5 6 7 8
Vd (V)
Id (mA)
-40°C
85°C
25°C
5
7
9
11
13
15
17
19
21
780 800 820 840 860 880 900 920
Frequency (GHz)
Gain (dB)
20mA
40mA
60mA
80mA
5
MGA-631P8 Typical Performance[1]
TA = 25 °C, Vd = 4V, Id = 54mA, R1=91ohm unless stated otherwise.
Figure 14. OIP3 vs Frequency and Temperature Figure 15. Gain vs Id and Temperature Figure 16. NF Vs Id and Temperature
Figure 17. OIP3 vs Id and Temperature Figure 18. Gain Vs Frequency and R1 Figure 19. NF Vs Frequency and R1
Figure 20. OIP3 Vs Frequency and R1 Figure 21. Input Return Loss Vs Frequency and
R1
Figure 22. Output Return Loss Vs Frequency
and R1
Notes:
1. Measurements obtained using demo board described in Figure 28 and Table 1, List 1.
10
15
20
25
30
35
40
780 800 820 840 860 880 900 920
Frequency (GHz)
OIP3 (dBm)
-40°C
-30°C
25°C
85°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10 20 30 40 50 60 70 80 90
Id (mA)
NF (dB)
-40°C
25°C
85°C
0
5
10
15
20
25
30
35
40
10 20 30 40 50 60 70 80 90
Id (mA)
OIP3 (dBm)
-40°C
-30°C
25°C
85°C
R1=56ohms
R1=91ohms
R1=560ohms
10
15
20
25
30
35
40
780 800 820 840 860 880 900 920
Frequency (GHz)
OIP3 (dBm)
R1=56ohms
R1=91ohms
R1=560ohms
-35
-30
-25
-20
-15
-10
-5
0
780 800 820 840 860 880 900 920
Frequency (GHz)
Input Return Loss
R1=56ohms
R1=91ohms
R1=560ohms
-25
-20
-15
-10
-5
0
780 800 820 840 860 880 900 920
Frequency (GHz)
Output Return Loss (dB)
R1=56ohms
R1=91ohms
R1=560ohms
0
2
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90
Id (mA)
Gain (dB)
-40°C
25°C
85°C
0
5
10
15
20
25
780 800 820 840 860 880 900 920
Frequency (GHz)
Gain (dB)
R1=56ohms
R1=91ohms
R1=560ohms
6
MGA-631P8 Typical Performance for 450 Mz Matching [1]
TA = +25 °C, Vd = 4V, Id = 54mA
Figure 23. Gain and NF Vs Frequency Figure 24. OIP3 vs Frequency Figure 25. Input and output Return Loss vs
Frequency
MGA-631P8 Typical Performance for 1.5 GHz Matching [2]
TA = +25 °C, Vd = 4V, Id = 54mA
Figure 26. Gain and NF vs Frequency Figure 27. OIP3 vs Frequency Figure 28. Input and output Return Loss vs
Frequency
Notes:
1. For Figure 22, 23 and 24, measurements obtained using demo board described in Figure28 and Table 1, List 2.
2. For Figure 25, 26 and 27, measurements obtained using demo board described in Figure28 and Table 1, List 3.
0
5
10
15
20
25
30
35
0.4 0.425 0.45 0.475 0.5
Frequency (GHz)
OIP3 (dBm)
OIP3
10
11
12
13
14
15
16
17
18
1.3 1.4 1.5 1.6 1.7
Frequency (GHz)
Gain (dB)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
NF (dB)
Gain
NF
10
15
20
25
30
35
40
45
1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70
Frequency (GHz)
OIP3 (dBm)
OIP3
-35
-30
-25
-20
-15
-10
-5
0
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
Frequency (GHz)
Input Return Loss (dB)
-14
-12
-10
-8
-6
-4
-2
0
Output Return Loss (dB)
Input Return Loss
Output Return Loss
10
12
14
16
18
20
22
24
26
0.35 0.38 0.40 0.43 0.45 0.48 0.50 0.53 0.55
Frequency (GHz)
Gain (dB)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
NF (dB)
Gain
NF
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65
Frequency (GHz)
Input Return Loss (dB)
-27
-24
-21
-18
-15
-12
-9
-6
-3
0
Output Return Loss (dB)
Input Return Loss
Output Return Loss
7
Demo Board Layout
Figure 30. Demo Board Schematic.
Note: This demo board is used for measuring Electrical Specications and plots of Fig. 4 to
Fig. 24. Table 1, List 1 shows the components values used while measuring Fig. 4 to Fig.
21. Table 1, List 2 shows the components values used while measuring Fig. 22 to Fig. 24.
Figure 29. Demo Board Layout Diagram
- Recommended PCB material is 10 mils Rogers RO4350.
- Suggested component values may vary according to layout and PCB material.
Demo Board Schematic for Table 1, List 1 (900 MHz Matching)
and List 2 (450 MHz Matching).
Vd
RFin
L1
C2
C1
L2
R1
C3
C4
C5
C6
Vbias
Bias
FB1
RFgnd
RFin RFout
Gnd
RFout
Rbias
C7
8
Figure 31. Demo Board Schematic with additional shunt inductor, L3, at RFout. This demo board is used for
measuring plots of Fig. 25 to Fig. 27. Table1, List 3 shows the components values.
Demo Board Schematic for Table 1, List 3 (1.5 GHz Matching)
Vd
RFin
L1
C2
C1
L2
R1
C3
C4
C5
C6
Vbias
Bias
L3
FB1
RFgnd
RFin RFout
Gnd
RFout
Rbias
C7
Figure 32. Demo Board Schematic with additional C8 and R3. Table 1, List4 shows the component values.
Demo Board Schematic for Table 1, List 4 (700MHz Matching)
9
Table 1
List 1 – Demo board component values for Demo board Schematic of Fig. 29.
These component values are used when measuring Electrical Specications and plots of Fig. 4 to Fig. 21.
List 2 – Demo Board Component values for Demo board Schematic of Fig. 29.
These component values are used while measuring plots of Fig. 22 to Fig. 24.
List 3 – Demo Board Component values for Demo board Schematic of Fig. 30.
These component values are used while measuring plots of Fig. 25 to Fig. 27.
List 4 – Demo Board Component values for Demo board Schematic of Figure 31.
Part Size List 1 (900 MHz Matching) List 2 (450 MHz Matching) List 3 (1.5 GHz Matching) List 4 (700MHz Matching)
L1 0402 13.0nH
(Coilcraft 0402CS-13NXJBW)
27.0nH
(Toko LL1005-FHL27NS)
4.7nH
(Toko LL1005-FHL4N7S)
15nH
(Toko LL1005-FHL15NS)
L2 0402 18.0nH
(Coilcraft 0402CS-18NXJBW)
27.0nH
(Toko LL1005-FHL27NS)
18.0nH
(Toko LL1005-FHL18NS)
15nH
(Toko LL1005-FHL15NS)
L3 0402 Not Placed Not Placed 6.8nH
(Toko LL1005-FHL6N8S)
Not Placed
C1 0402 2.4pF
(Rohm MCH155A024CK)
3.9pF
(Rohm MCH155A3R9JK)
1.5pF
(Rohm MCH155A1R5CK)
3pF
C2 0402 100pF
(Rohm MCH155A101JK)
100pF
(Rohm MCH155A101JK)
100pF
(Rohm MCH155A101JK)
2.2pF
(Rohm MCH155A2R2CK)
C3 0402 5.6pF
(Rohm MCH155A056CK)
5.6pF
(Rohm MCH155A5R6CK)
5.6pF
(Rohm MCH155A5R6CK)
2.2pF
(Rohm MCH155A4R7CK)
C4 0402 100pF
(Rohm MCH155A101JK)
100pF
(Rohm MCH155A101JK)
100pF
(Rohm MCH155A101JK)
33pF
C5 0402 0.1uF
(Kyocera CM05X5R104K10AH)
0.1uF
(Kyocera CM05X5R104K10AH)
0.1uF
(Kyocera CM05X5R104K10AH)
0.1uF
(Kyocera CM05X5R104K10AH)
C6 0402 9pF
(Rohm MCH155A090DK)
9.0pF
(Rohm MCH155A090DK)
9.0pF
(Rohm MCH155A090DK)
33pF
C7 0402 0.1uF
(Kyocera CM05X5R104K10AH)
0.1uF
(Kyocera CM05X5R104K10AH)
0.1uF
(Kyocera CM05X5R104K10AH)
0.1uF
(Kyocera CM05X5R104K10AH)
C8 10nF
R1 0402 91 W
(Rohm MCR01MZSJ910)
56 W
(Rohm MCR0 MZSJ560)
300 W
(Rohm MCR01MZSJ301)
100R
(Rohm MCR01MZS101)
R2 620R
(Rohm MCR01MZ621)
R3 56R
(Rohm MCR0MZSJ560)
Rbias 0402 620 W
(Rohm MCR01MZS621)
620 W
(Rohm MCR01MZS621)
620 W
(Rohm MCR01MZS621)
10
Input
RFgnd
Vbias
Gnd
Output
FB1
Bias
C7
C4
C1
L1
Rbias
C6
C5
Vbias
R1
1.41mm
0.40mm
1.44mm
C3
3.30mm
Load pull
Bias Tee
Vd
Dielectric: RO4350
Thickness: 0.254mm
The input port is matched for good NF and IRL. Because
of the high reverse isolation, any change on the output
port has a minimum change on the input port. Therefore,
only the output port is tuned for the maximum OIP3. R1
is varied for dierent level of gain Test condition for the
OIP3: -20dBm at 900MHz ±5MHz.
Load pull test set up
Figure 33. Test setup for load pull data
11
Measured results
Test condition: 4V/54mA, 900MHz
Refer to Table 1, List 1 for SMT component value and de-
scription, unless otherwise stated.
Resistor, R1 ΓOIP3 (max)
91ohm 0.81 < 44.3o +39.0dBm
56ohm 0.65 <94.2o +34.2dBm
560ohm 0.38 < 85.2o +38.7dBm
Figure 34. Load pull contour plot for R1=91ohm
12
Figure 35. Load pull contour plot for R1=56ohm
Figure 36. Load pull contour plot for R1=560ohm
13
MGA-631P8 Scattering Parameter and Noise Parameter Test Setup
Figure 37. Test Setup for S & Noise Parameters data, C3=5.6pF (Rohm MCH155A5R6CK)
Typical Noise Parameter, Vd=4V, Id=54mA, applicable to any R1 due to high reverse isolation
Freq FMIN GAMMA OPT
Rn/50(GHz) (dB) Mag Ang
0.5 0.41 0.35 10 0.13
0.9 0.38 0.21 17.6 0.13
1.9 0.80 0.39 37.2 0.14
2.0 0.86 0.42 29.6 0.18
2.4 1.02 0.41 34.1 0.21
3.0 1.24 0.37 34.4 0.28
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise gure measurements made at 16 dierent impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated.
2. S and noise parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 35 shows the input and output reference plane.
14
MGA631P8 Typical Scattering Parameters, Vd=4V, Id=54mA, R1=56ohm
Freq S11 S21 S12 S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.94 -11.1 23.02 155.7 0.003 47.9 0.63 -24.7
0.5 0.63 -25.3 10.46 117.6 0.011 48.7 0.37 -81.7
1.0 0.53 -23.4 5.38 110.3 0.014 37.1 0.30 -112.7
1.5 0.52 -25.0 3.59 113.4 0.015 39.5 0.27 -128.5
1.9 0.53 -28.7 2.92 118.6 0.016 35.0 0.27 -137.7
2.0 0.53 -29.7 2.76 118.7 0.016 35.3 0.27 -134.7
2.5 0.53 -34.8 2.45 122.6 0.015 34.0 0.29 -140.7
3.0 0.54 -40.0 2.09 125.5 0.015 34.9 0.33 -145.0
3.5 0.55 -44.7 1.93 128.3 0.016 36.7 0.38 -153.5
4.0 0.56 -48.5 1.71 130.9 0.017 32.4 0.44 -164.3
5.0 0.58 -56.9 1.53 132.4 0.022 28.7 0.48 167.6
6.0 0.61 -66.0 1.38 133.4 0.034 22.0 0.46 133.6
7.0 0.64 -77.7 1.33 132.4 0.053 11.5 0.39 87.3
8.0 0.71 -97.8 1.45 118.4 0.111 -8.7 0.28 1.6
MGA631P8 Typical Scattering Parameters, Vd=4V, Id=54mA, R1=91ohm
Freq S11 S21 S12 S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.94 -10.9 22.91 156.2 0.008 65.8 0.61 -25.3
0.5 0.64 -24.8 10.73 121.3 0.009 44.3 0.33 -70.4
1.0 0.54 -23.8 6.02 113.0 0.012 34.1 0.28 -89.1
1.5 0.53 -26.2 4.14 112.0 0.013 37.2 0.30 -103.4
1.9 0.52 -29.4 3.28 114.2 0.014 33.7 0.34 -115.7
2.0 0.53 -30.3 3.09 113.4 0.013 36.8 0.35 -116.6
2.5 0.53 -35.4 2.64 116.1 0.013 34.3 0.40 -130.4
3.0 0.53 -40.0 2.12 118.9 0.013 35.8 0.44 -141.6
3.5 0.54 -44.2 1.90 122.7 0.014 36.4 0.47 -153.9
4.0 0.55 -48.2 1.64 126.5 0.015 34.4 0.49 -166.2
5.0 0.58 -56.5 1.47 130.3 0.022 30.5 0.51 165.7
6.0 0.61 -65.8 1.34 132.4 0.033 23.2 0.48 132.7
7.0 0.64 -77.6 1.30 132.0 0.052 13.4 0.40 88.2
8.0 0.71 -97.5 1.42 118.0 0.111 -7.9 0.29 5.2
Notes:
1. S-parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 35 shows the input and output reference plane.
15
MGA631P8 Typical Scattering Parameters, Vd=4V, Id=54mA, R1=300ohm
Freq S11 S21 S12 S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.93 -10.1 22.64 158.5 0.003 28.6 0.59 -18.6
0.5 0.67 -24.0 12.70 126.7 0.006 37.0 0.42 -34.6
1.0 0.57 -26.6 7.55 112.4 0.007 36.2 0.47 -59.4
1.5 0.53 -28.5 5.09 106.7 0.008 43.5 0.52 -83.0
1.9 0.52 -31.7 3.85 106.4 0.008 45.9 0.54 -99.8
2.0 0.52 -32.4 3.59 104.9 0.009 47.1 0.55 -103.5
2.5 0.52 -36.7 3.00 107.1 0.009 40.4 0.57 -121.8
3.0 0.53 -40.6 2.26 108.9 0.010 39.0 0.59 -136.7
3.5 0.54 -45.0 1.96 113.2 0.011 43.6 0.60 -151.2
4.0 0.55 -48.5 1.64 118.1 0.013 36.8 0.61 -165.0
5.0 0.57 -56.5 1.42 123.5 0.020 27.8 0.57 166.4
6.0 0.60 -65.8 1.29 127.3 0.033 19.7 0.52 134.9
7.0 0.64 -77.8 1.27 127.1 0.052 10.9 0.41 93.3
8.0 0.71 -99.2 1.37 112.5 0.108 -7.4 0.26 14.4
MGA631P8 Typical Scattering Parameters, Vd=4V, Id=54mA, R1=560ohm
Freq S11 S21 S12 S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.93 -9.5 22.87 160.4 0.002 61.7 0.60 -13.3
0.5 0.69 -24.3 13.48 126.6 0.004 44.7 0.50 -31.3
1.0 0.56 -26.9 7.90 111.2 0.005 44.5 0.54 -57.9
1.5 0.53 -29.0 5.29 105.1 0.007 48.3 0.56 -81.7
1.9 0.51 -31.5 3.97 104.8 0.007 48.9 0.59 -98.7
2.0 0.52 -32.4 3.70 103.0 0.008 46.4 0.60 -102.5
2.5 0.52 -36.4 3.08 105.3 0.008 45.0 0.62 -120.9
3.0 0.53 -40.6 2.31 106.9 0.010 42.6 0.62 -136.1
3.5 0.54 -44.6 2.00 111.5 0.011 40.1 0.63 -150.5
4.0 0.55 -48.1 1.65 116.2 0.013 36.6 0.63 -164.1
5.0 0.57 -56.6 1.43 121.6 0.020 26.9 0.60 167.5
6.0 0.60 -65.6 1.30 125.5 0.033 19.9 0.53 136.4
7.0 0.64 -77.0 1.29 125.5 0.052 9.8 0.40 95.6
8.0 0.71 -98.0 1.40 109.4 0.107 -8.9 0.22 17.0
Notes:
1. S-parameters are measured on PCB. The PCB material is 10 mils Roger RO4350. Figure 35 shows the input and output reference plane.
16
Ordering Information
Part Number No. of Devices Container
MGA-631P8-TR1G 3000 7” Reel
MGA-631P8-TR2G 10000 13” Reel
MGA-631P8-BLKG 100 antistatic bag
TSLP2X2 Package Dimension
All dimensions are in millimeters (mils)
Note: 1 mil = 1/1000 inch
PCB Land Pattern and Stencil Design
2.80 (110.24)
0.70 (27.56)
0.25 (9.84)
0.25 (9.84)
0.50 (19.68)
0.28 (10.83)
0.60 (23.62)
0.20 (7.87)
PIN 1
Solder
mask
RF
transmission
line 0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
1.60 (62.99)
+
2.72 (107.09)
0.63 (24.80)
0.22 (8.86)
0.32 (12.79)
0.50 (19.68)
0.25 (9.74)
0.63 (24.80)
Stencil Layout (top view)
PCB Land Pattern (top view)
0.72 (28.35)
PIN 1
1.54 (60.61)
Tape Dimensions
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
8 mm
4 mm
G1xG1xG1xG1x
P
0
P
F
W
D
1
E
P
2
A
0
10° Max
t
1
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (inches)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.30 ± 0.05
2.30 ± 0.05
1.00 ± 0.05
4.00 ± 0.10
1.00 + 0.25
0.091 ± 0.004
0.091 ± 0.004
0.039 ± 0.002
0.157 ± 0.004
0.039 + 0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30
0.254 ± 0.02
0.315 ± 0.012
8.00 ± 0.10 0.315 ± 0.004
0.010 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.0004
COVER TAPE
D
+ +
T
t
10° Max
B
0
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Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes AV01-0674EN
AV02-0174EN - April 16, 2009