285D505X9200C445AI - VISHAY

ES2F, ES2G

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Revision: 22-Mar-18 1Document Number: 88588

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Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated pellet chip junction

• Ideal for automated placement

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, and telecommunication.

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 2.0 A

VRRM 300 V, 400 V

IFSM 50 A

trr 35 ns

VF at IF1.1 V

TJ max. 150 °C

Package DO-214AA (SMB)

Circuit configuration Single

SMB (DO-214AA)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ES2F ES2G UNIT

Device marking code EF EG

Maximum repetitive peak reverse voltage VRRM 300 400 V

Working peak reverse voltage VRWM 225 300 V

Maximum RMS voltage VRMS 210 280 V

Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 50 A

Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

ES2F, ES2G

www.vishay.com Vishay General Semiconductor

Revision: 22-Mar-18 2Document Number: 88588

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Note

(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT

Maximum instantaneous forward voltage 2.0 A VF (1) 1.1 V

Maximum reverse current at VRRM

TA = 25 °C IR

10 µA

TA = 100 °C 200

Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 35 ns

Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/μs,

VR = 30 V, Irr = 0.1 IRM trr 50 ns

Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/μs,

VR = 30 V, Irr = 0.1 IRM IRM 3.0 A

Maximum stored charge IF = 1.0 A, dI/dt = 100 A/μs,

VR = 30 V, Irr = 0.1 IRM Qrr 50 nC

Typical junction capacitance 4.0 V, 1 MHz CJ15 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ES2F ES2G UNIT

Maximum thermal resistance RJA (1) 75 °C/W

RJL (1) 25

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

ES2G-E3/52T 0.096 52T 750 7" diameter plastic tape and reel

ES2G-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel

ES2GHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel

ES2GHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel

ES2F, ES2G

www.vishay.com Vishay General Semiconductor

Revision: 22-Mar-18 3Document Number: 88588

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Reverse Switching Characteristics

Fig. 6 - Typical Junction Capacitance

3.0

80 90 100 110 120 130 140 150

2.0

1.0

Resistive or Inductive Load

Average Forward Rectified Current (A)

Lead Temperature (°C)

1 10010

8.3 ms Single Half Sine-Wave

at T

= 110 °C

Peak Forward Surge Current (A)

Number of Cycles at 60 Hz

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

100

0.1

0.01

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

0.2 0.4 0.6 0.81 1.2 1.4

= 150 °C

= 125 °C

= 100 °C

= 25 °C

Percent of Rated Peak Reverse Voltage (%)

020406080 100

1000

100

0.1

Instantaneous Reverse Leakage

Current (µA)

25 50 75 100 125 150 175

120

160

200

at 5 A, 50 A/µs

at 2 A, 20 A/µs

at 5 A, 50 A/µs

at 2 A, 20 A/µs

at 1 A, 100 A/µs

Recovered Stored Charge/

Reverse Recovery Time nC/ns

Junction Temperature (°C)

100

0.1 1 10 100 1000

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

ES2F, ES2G

www.vishay.com Vishay General Semiconductor

Revision: 22-Mar-18 4Document Number: 88588

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Cathode Band

SMB (DO-214AA)

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

0.180 (4.57)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

0.008 (0.2)

0 (0)

0.220 (5.59)

0.205 (5.21)

0.060 (1.52)

0.030 (0.76)

0.096 (2.44)

0.084 (2.13)

Mounting Pad Layout

0.086 (2.18) MIN.

0.060 (1.52) MIN.

0.085 (2.159) MAX.

0.220 (5.59) REF.

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Revision: 08-Feb-17 1Document Number: 91000

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