DATA SHEET PHOTOCOUPLER PS2732-1,PS2733-1 HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor. This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light. It is designed for high density mounting applications. FEATURES * High isolation voltage (BV = 2 500 Vr.m.s.) * High collector to emitter voltage (VCEO = 300 V: PS2732-1) (VCEO = 350 V: PS2733-1) * SOP (Small Outline Package) type * High current transfer ratio (CTR = 4 000 % TYP.) * Ordering number of taping product : PS2732-1-F3, F4, PS2733-1-F3, F4 * UL approved: File No. E72422 (S) * VDE0884 approved (Option) APPLICATIONS * Hybrid IC * Telephone/Telegraph Receiver * FAX ORDERING INFORMATION Part Number PS2732-1, PS2733-1 Package 4-pin SOP Safety Standard Approval Standard products * UL approved PS2732-1-V, PS2733-1-V 4-pin SOP VDE0884 approved products (Option) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PN10248EJ01V0DS (1st edition) (Previous No. P11312EJ3V0DS00) Date Published February 2003 CP(K) Printed in Japan The mark * shows major revised points. NEC Compound Semiconductor Devices 1994, 2003 PS2732-1,PS2733-1 PACKAGE DIMENSIONS (in millimeters) PS2732-1 PS2733-1 4.00.5 TOP VIEW 4 1 3 2 1. Anode 2. Cathode 3. Emitter 4. Collector 2 0.15 +0.10 -0.05 2.0 0.10.1 2.10.2 7.00.3 4.4 2.54 0.4 +0.10 -0.05 0.50.3 0.25 M Data Sheet PN10248EJ01V0DS PS2732-1,PS2733-1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified) Parameter Symbol Ratings PS2732-1 Diode PS2733-1 Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V PD/C 0.8 mW/C PD 80 mW IFP 1 A Power Dissipation Derating Power Dissipation Peak Forward Current Transistor Unit *1 Collector to Emitter Voltage VCEO Emitter to Collector Voltage VECO 0.3 V IC 150 mA PC/C 1.5 mW/C PC 150 mW Isolation Voltage BV 2 500 Vr.m.s. Operating Ambient Temperature TA -55 to +100 C Storage Temperature Tstg -55 to +150 C Collector Current Power Dissipation Derating Power Dissipation *2 300 350 V *1 PW = 100 s, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output Data Sheet PN10248EJ01V0DS 3 PS2732-1,PS2733-1 ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz MIN. TYP. MAX. Unit 1.15 1.4 V 5 A 30 pF Transistor Collector to Emitter Dark Current ICEO IF = 0 mA, VCE = 300 V Coupled Current Transfer Ratio (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF VCC = 5 V, IC = 10 mA, RL = 100 100 s Rise Time Fall Time *1 tr *1 VCC IF VOUT RL = 100 Data Sheet PN10248EJ01V0DS nA % 1.0 V 100 Pulse Input 4 4 000 11 tf 50 1 500 10 *1 Test circuit for switching time PW = 1 ms Duty cycle = 1/10 400 PS2732-1,PS2733-1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) 75 50 25 25 0 50 75 25 50 75 100 TA = +100 C +75 C +50 C +25 C 0 C -25 C -55 C 0.8 1.0 1.2 1.4 1.6 10 000 VCE = 300 V 1 000 100 10 1 0.1 -25 -50 0 25 50 75 100 Forward Voltage VF (V) Ambient Temperature TA (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 1 000 5 mA 4.5 mA 4 mA 3.5 mA 3 mA 2.5 mA 140 120 100 Collector Current IC (mA) Forward Current IF (mA) 50 COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 160 Collector Current IC (mA) 100 FORWARD CURRENT vs. FORWARD VOLTAGE 0.1 2 mA 80 1.5 mA 60 1 mA 40 20 0 1.5 mW/C Ambient Temperature TA (C) 1 0.01 0.6 150 Ambient Temperature TA (C) 100 10 200 0 100 Collector to Emitter Dark Current ICEO (nA) Diode Power Dissipation PD (mW) 100 IF = 5 mA 100 2 mA 1 mA 0.5 mA 10 1 IF = 0.5 mA 1 2 3 4 5 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Collector Saturation Voltage VCE (sat) (V) Collector to Emitter Voltage VCE (V) Data Sheet PN10248EJ01V0DS 5 PS2732-1,PS2733-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 5 000 1.2 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 C, IF = 1 mA, VCE = 2 V 0.2 0 -50 -25 0 25 50 75 Sample A VCE = 2 V 4 000 Sample B 3 000 2 000 1 000 0 0.1 100 0.5 1 5 10 Ambient Temperature TA (C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 20 300 VCC = 10 V, IC = 10 mA 0 Normalized Gain GV Switching Time t ( s) 50 td tf 10 5 ts -5 50 100 500 1k 1 k -15 VCE = 4 V, IC = 10 mA, -20 Vin = 0.1 Vp-p -25 2k 100 -10 1 20 RL = 10 tr 100 1 k 1 F Vin -30 0.01 Load Resistance RL () 47 RL Vout 0.1 1 10 Frequency f (kHz) LONG TERM CTR DEGRADATION 1.2 TA = 25 C IF = 1 mA CTR (Relative Value) 1.0 0.8 TA = 60 C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (Hr) Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed. 6 Data Sheet PN10248EJ01V0DS 100 PS2732-1,PS2733-1 TAPING SPECIFICATIONS (in millimeters) 1.550.1 2.9 MAX. 7.40.1 5.50.05 1.5+0.1 -0 12.00.2 2.00.05 4.00.1 1.750.1 Outline and Dimensions (Tape) 2.40.1 4.60.1 0.3 8.00.1 Tape Direction PS2732-1-F4 PS2733-1-F4 PS2732-1-F3 PS2733-1-F3 Outline and Dimensions (Reel) 21.00.8 13.00.2 R 1.0 1001.0 2.00.5 13.00.2 3302.0 2.00.5 13.51.0 17.51.0 11.9 to 15.4 Outer edge of flange Packing: 3 500 pcs/reel Data Sheet PN10248EJ01V0DS 7 PS2732-1,PS2733-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature 260C or below (package surface temperature) * Time of peak reflow temperature 10 seconds or less * Time of temperature higher than 220C 60 seconds or less * Time to preheat temperature from 120 to 180C 12030 s * Number of reflows Three * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature 260C or below (molten solder temperature) * Time 10 seconds or less * Preheating conditions 120C or below (package surface temperature) * Number of times One (Allowed to be dipped in solder including plastic mold portion.) * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 8 Data Sheet PN10248EJ01V0DS PS2732-1,PS2733-1 USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10248EJ01V0DS 9 PS2732-1,PS2733-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages 150 Vr.m.s. IV for rated line voltages 300 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength Maximum operating isolation voltage UIORM 710 Vpeak Upr 850 Vpeak Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.6 x UIORM, Pd < 5 pC Upr 1 140 Vpeak Highest permissible overvoltage UTR 4 000 Vpeak Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.2 x UIORM, Pd < 5 pC Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg -55 to +150 C Operating temperature range TA -55 to +100 C Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 C VIO = 500 V dc at TA MAX. at least 100 C 12 11 Ris MIN. 10 Package temperature Tsi 150 C Current (input current IF, Psi = 0) Isi 300 mA Power (output or total power dissipation) Psi 500 mW Ris MIN. 10 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = 175 C (Tsi) 10 Data Sheet PN10248EJ01V0DS 9 PS2732-1,PS2733-1 * The information in this document is current as of February, 2003. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PN10248EJ01V0DS 11 PS2732-1,PS2733-1 SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. * Do not destroy or burn the product. * Do not cut or cleave off any part of the product. * Do not crush or chemically dissolve the product. * Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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