PS2733-1-F3 - NEC Electronics

DATA SHEET

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PHOTOCOUPLER

PS2732-1,PS2733-1

HIGH COLLECTOR TO EMITTER VOLTAGE

SOP MULTI PHOTOCOUPLER −NEPOC Series−

Document No. PN10248EJ01V0DS (1st edition)

(Previous No. P11312EJ3V0DS00)

Date Published February 2003 CP(K)

Printed in Japan 





NEC Compound Semiconductor Devices 1994, 2003

The mark •

••

• shows major revised poi nts.

DESCRIPTION

The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN

silicon darlington-connected phototransistor.

This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.

It is designed for high density mounting applications.

FEATURES

• High isolation voltage (BV = 2 500 Vr.m.s.)

• High collector to emitter voltage (VCEO = 300 V: PS2732-1)

(VCEO = 350 V: PS2733-1)

• SOP (Small Outline Package) type

• High current transfer ratio (CTR = 4 000 % TYP.)

• Ordering number of taping product : PS2732-1-F3, F4, PS2733-1-F3, F4

• UL approved: File No. E72422 (S)

• VDE0884 approved (Option)

APPLICATIONS

•Hybrid IC

• Telephone/Telegraph Receiver

•FAX

ORDERING INFORMATION

Part Number Package Safety Standard A pproval

Standard productsPS2732-1, P S2733-1 4-pin SOP

• UL approved

PS2732-1-V, PS2733-1-V 4-pin SOP VDE0884 approved products (Option)

Data Sheet PN10248EJ01V0DS

PS2732-1,PS2733-1

PACKAGE DIMENSIONS (in millimeters)

4.0±0.5

7.0±0.3

4.4

0.5±0.3

0.15

+0.10

–0.05

TOP VIEW

1. Anode

2. Cathode

3. Emitter

4. Collector

2.0

0.1±0.1

2.1±0.2

2.54

0.4

+0.10

–0.05

0.25 M

PS2732-1

PS2733-1

Data Sheet PN10248EJ01V0DS 3

PS2732-1,PS2733-1

ABSOLUTE MAXIMUM RATINGS (TA = 25 °

°°

°C, unless otherwise specified)

Parameter Symbol Ratings Unit

PS2732-1 PS2733-1

Diode Forward Current (DC) IF50 mA

Reverse Vol tage VR6V

Power Dissipati on Derating

∆

PD/°C0.8mW/

°C

Power Dissipati on PD80 mW

Peak Forward Current*1 IFP 1A

Transistor Collector to Emitter Voltage VCEO 300 350 V

Emitter to Collector Voltage VECO 0.3 V

Collector Current IC150 mA

Power Dissipati on Derating

∆

PC/°C1.5mW/

°C

Power Dissipati on PC150 mW

Isolat i on Voltage*2 B V 2 500 Vr.m. s.

Operating Am bi ent Tem perature TA–55 to +100 °C

Storage Temperat ure Tstg –55 to +150 °C

*1 PW = 100

s, Duty Cycle = 1 %

*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

Data Sheet PN10248EJ01V0DS

PS2732-1,PS2733-1

ELECTRICAL CHARACTERISTICS (TA = 25 °

°°

°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Diode Forward Voltage VFIF = 10 mA 1.15 1.4 V

Reverse Current IRVR = 5 V 5

Terminal Capaci tance CtV = 0 V, f = 1 MHz 30 pF

Transistor Collector to Emitter

Dark Current ICEO IF = 0 mA, VCE = 300 V 400 nA

Coupled Current Transfer Ratio

(IC/IF)CTR IF = 1 mA, VCE = 2 V 1 500 4 000 %

Collector Saturation

Voltage VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V

Isolat i on Resist ance RI-O VI-O = 1 kVDC 1011 Ω

Isolat i on Capacitanc e CI-O V = 0 V, f = 1 M Hz 0.4 pF

Rise Time *1 trVCC = 5 V, I C = 10 mA, RL = 100 Ω100

Fall Time *1 tf100

*1 Test circuit for switching time

OUT

= 100 Ω

50 Ω

Pulse Input

PW = 1 ms

Duty cycle = 1/10

Data Sheet PN10248EJ01V0DS 5

PS2732-1,PS2733-1

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)

100

25 50 75 100

Ambient Temperature T

(˚C)

Diode Power Dissipation P

(mW)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

Ambient Temperature T

(˚C)

Transistor Power Dissipation P

(mW)

TRANSISTOR POWER DISSIPATION vs.

AMBIENT TEMPERATURE

Collector to Emitter Voltage V

(V)

Collector Current I

(mA)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

0.1

0.01

0.6 1.0 1.4 1.60.8 1.2

Forward Voltage V

(V)

Forward Current I

(mA)

FORWARD CURRENT vs.

FORWARD VOLTAGE

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

= +100 ˚C

+75 ˚C

+50 ˚C

Ambient Temperature T

(˚C)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

Collector to Emitter Dark Current I

CEO

(nA)

Collector Saturation Voltage V

CE (sat)

(V)

Collector Current I

(mA)

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

200

150

100

025 50 75 100

0.1

–50

= 300 V

100

1 000

–25 025 50 75 100

10 000

1.5 mW/˚C

0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

1 000

100

0.1

012

345

160

140

120

100

1 mA

= 5 mA

2 mA

1 mA

0.5 mA

= 0.5 mA

1.5 mA

2 mA

2.5 mA

3.5 mA

3 mA

5 mA

4 mA

4.5 mA

Data Sheet PN10248EJ01V0DS

PS2732-1,PS2733-1

1.2

1.0

0.8

0.6

0.4

0.2

–50 0–25 50 75 100

5 000

= 2 V

0.1

300

= 10 V,

= 10 mA

Normalized to 1.0

at T

= 25 ˚C,

= 1 mA, V

= 2 V

0.01

= 4 V,

= 10 mA,

= 0.1 V

p-p

–25

–15

–10

–5

4 000

3 000

2 000

1 000

Sample B

Sample A

0.5 1 5 10 20

100

50 100 500 1 k 2 k

–30

–20

0.1 1 10 100

147

Ω

1 kΩ

out

100 Ω

1 kΩ

1.2

1.0

0.8

0.6

0.4

0.2

10 10

= 1 mA

= 25 ˚C

= 60 ˚C

Forward Current I

(mA)

Ambient Temperature T

(˚C)

Load Resistance R

(Ω)Frequency f (kHz)

Normalized Current Transfer Ratio CTR

Current Transfer Ratio CTR (%)

Normalized Gain G

Switching Time t ( s)

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

SWITCHING TIME vs.

LOAD RESISTANCE FREQUENCY RESPONSE

LONG TERM CTR DEGRADATION

Time (Hr)

CTR (Relative Value)

= 10 Ω

Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.

Data Sheet PN10248EJ01V0DS 7

PS2732-1,PS2733-1

TAPING SPECIFICATIONS (in millimeters)

Tape Direction

Outline and Dimensions (Reel)

Packing: 3 500 pcs/reel

2.0±0.5

R 1.0

13.0±0.2

21.0±0.8

330±2.0

100±1.0

2.0±0.5

11.9 to 15.4

Outer edge of

flange

17.5±1.0

13.5±1.0

13.0±0.2

PS2732-1-F3

PS2733-1-F3 PS2732-1-F4

PS2733-1-F4

1.55±0.1

2.0±0.05

4.0±0.1

1.75±0.1

4.6±0.1

2.9 MAX.

0.3

8.0±0.1

Outline and Dimensions (Tape)

2.4±0.1

1.5+0.1

–0

7.4±0.1

5.5±0.05

12.0±0.2

Data Sheet PN10248EJ01V0DS

PS2732-1,PS2733-1

NOTES ON HANDLING

1. Recommended soldering conditions

(1) Infrared reflow soldering

• Peak reflow temperature 260°C or below (package surface temperature)

• Time of peak reflow temperature 10 seconds or less

• Time of temperature higher than 220°C 60 seconds or less

• Time to preheat temperature from 120 to 180°C 120±30 s

• Number of reflows Three

• Flux Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt% is recommended.)

120±30 s

(preheating)

220˚C

180˚C

Package Surface Temperature T (˚C)

Time (s)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

to 60 s

260˚C MAX.

120˚C

(2) Wave soldering

• Temperature 260°C or below (molten solder temperature)

• Time 10 seconds or less

• Preheating conditions 120°C or below (package surface temperature)

• Number of times One (Allowed to be dipped in solder including plastic mold portion.)

• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine

content of 0.2 Wt% is recommended.)

(3) Cautions

•Fluxes

Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.

2. Cautions regarding noise

Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between

collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute

maximum ratings.

Data Sheet PN10248EJ01V0DS 9

PS2732-1,PS2733-1

USAGE CAUTIONS

1. Protect against static electricity when handling.

2. Avoid storage at a high temperature and high humidity.

Data Sheet PN10248EJ01V0DS

PS2732-1,PS2733-1

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter Symbol Speck Unit

Applic at i on class i ficat i on (DIN VDE 0109)

for rated li ne v ol tages ≤ 150 Vr. m.s. IV

for rated li ne v ol tages ≤ 300 Vr. m.s. III

Climati c test clas s (DIN IE C 68 Tei l 1/09.80) 55/100/21

Dielect ri c strength

Maximum operating isolation voltage UIORM 710 Vpeak

Test v ol t age (partial dis charge test, procedure a for type test and random test) Upr 850 Vpeak

Upr = 1.2 × UIORM, Pd < 5 pC

Test v ol t age (partial dis charge test, procedure b for all devi ces test)

Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak

Highest perm i ssible overvolt age UTR 4 000 Vpeak

Degree of pollut i on (DI N V DE 0109) 2

Clearance dis tance > 5 mm

Creepage distance > 5 mm

Comparativ e tracki ng i ndex (DIN IE C 112/ VDE 0303 part 1) CTI 175

Material group (DIN VDE 0109) III a

Storage tem perature range Tstg –55 to +150 °C

Operating tem perat ure range TA–55 to +100 °C

Isolat i on resist ance, mi ni m um value

VIO = 500 V dc at T A = 25 °CRis MIN.10

12 Ω

VIO = 500 V dc at T A M AX. at l east 100 °CRis MIN.10

11 Ω

Safety maximum ratings

(maximum permissible in case of f aul t, see thermal derati ng curve)

Package temperature Tsi 150 °C

Current (input c urrent IF, Psi = 0) Isi 300 mA

Power (output or total power dissipat i on) Psi 500 mW

Isolat i on resist ance

VIO = 500 V dc at T A = 175 °C (T si) Ris MI N. 109Ω

Data Sheet PN10248EJ01V0DS 11

PS2732-1,PS2733-1

M8E 00. 4 - 0110

The information in this document is current as of February, 2003. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

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Descriptions of circuits, software and other related information in this document are provided for illustrative

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(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

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•

NEC Compound Semiconductor Devices Hong Kong Limited

Hong Kong Head Office

Taipei Branch Office

Korea Branch Office

TEL: +852-3107-7303

TEL: +886-2-8712-0478

TEL: +82-2-558-2120

FAX: +852-3107-7309

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FAX: +82-2-558-5209

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TEL: +1-408-988-3500 FAX: +1-408-988-0279

0302

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com

For further information, please contact

PS2732-1,PS2733-1

SAFETY INFORMATION ON THIS PRODUCT

Caution GaAs Products The product contains gallium arsenide, GaA s.

GaAs vapor and powder are hazardous to human health if inhaled or inges ted.

• Do not destroy or burn the product.

• Do not cut or cleave of f any part of the product .

• Do not crush or chemic al l y di ssolve the product .

• Do not put the product in t he m outh.

Follow related l aws and ordinances for dispos al . The product should be exc l uded from general

industri al was te or household garbage.