IGBT - Field Stop 600 V, 60 A FGH60N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor's new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. Features * * * * * * * * Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A High Input Impedance Tightened Parameter Distribution This Device is Pb-Free and is RoHS Compliant Qualified to Automotive Requirements of AEC-Q101 www.onsemi.com VCES IC 600 V 60 A C G E E C Applications * Automotive Chargers, Converters, High Voltage Auxiliaries * Solar Inverters, UPS, SMPS, PFC G COLLECTOR (FLANGE) TO-247-3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD $Y &Z &3 &K FGH60N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2013 January, 2020 - Rev. 4 1 Publication Order Number: FGH60N60SMD-F085/D FGH60N60SMD-F085 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage 20 V TC = 25C 120 A TC = 100C 60 A 180 A TC = 25C 60 A TC = 100C 30 A 180 A TC = 25C 600 W TC = 100C 300 W Operating Junction Temperature -55 to +175 C Storage Temperature Range -55 to +175 C 300 C IC ICM (Note 1) IF IFM (Note 1) PD TJ TSTG TL Description Collector Current Pulsed Collector Current Diode Forward Current Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Max. Unit RqJC (IGBT) (Note 2) Thermal Resistance, Junction to Case 0.25 _C/W RqJC (Diode) Thermal Resistance, Junction to Case 1.1 _C/W Thermal Resistance, Junction to Ambient (PCB Mount) (Note 2) 45 _C/W RqJA 2. Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements. JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Packing Method Qty per Tube FGH60N60SMD FGH60N60SMD-F085 TO-247 Tube 30ea www.onsemi.com 2 FGH60N60SMD-F085 ELECTRICAL CHARACTERISTICS OF THE IGBT Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 mA 600 - - V VGE = 0 V, IC = 250 mA - 0.22 - V/C VCE = VCES, VGE = 0 V - - 250 mA ICES at 80 % *BVCES, 175 C - - 1100 VGE = VGES, VCE = 0 V - - 400 nA 3.5 4.7 6.0 V OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES IGES Collector Cut-Off Current G-E Leakage Current ON CHARACTERISTICS VGE(th) G-E Threshold Voltage IC = 250 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, - 1.8 2.5 V IC = 60 A, VGE = 15 V, TC = 175C - 2.14 - V VCE = 30 V, VGE = 0 V, f = 1 MHz - 2780 3700 pF - 260 345 pF - 80 110 pF - 22 29 ns - 46 60 ns Turn-Off Delay Time - 116 151 ns Fall Time - 14 18 ns Eon Turn-On Switching Loss - 1.59 2.23 mJ Eoff Turn-Off Switching Loss - 0.39 0.55 mJ Ets Total Switching Loss - 1.98 2.78 mJ Td(on) Turn-On Delay Time - 22 28 ns - 44 58 ns Turn-Off Delay Time - 124 161 ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Td(off) Tf Turn-On Delay Time Rise Time Rise Time VCC = 400 V, IC = 60 A, RG = 3 W, VGE = 15 V, Inductive Load, TC = 25C VCC = 400 V, IC = 60 A, RG = 3 W, VGE = 15 V, Inductive Load, TC = 175C Fall Time - 15 20 ns Eon Turn-On Switching Loss - 2.41 3.13 mJ Eoff Turn-Off Switching Loss - 1.08 1.42 mJ Ets Total Switching Loss - 3.49 4.55 mJ Qg Total Gate Charge - 187 280 nC Qge Gate to Emitter Charge - 20 29 nC Qgc Gate to Collector Charge - 92 138 nC VCE = 400 V, IC = 60 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH60N60SMD-F085 ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25C unless otherwise noted) Symbol VFM Trr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Test Conditions IF = 30 A IF = 30 A, dIF/dt = 200 A/ms Diode Reverse Recovery Charge Min Typ Max Unit TC = 25C - 2.1 2.7 V TC = 175C - 1.48 - TC = 25C - 33 42 TC = 175C - 115 - TC = 25C - 53 69 TC = 175C - 606 - ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH60N60SMD-F085 TYPICAL PERFORMANCE CHARACTERISTICS 180 VGE=20V 15V 12V 10V Collector Current, IC (A) Collector Current, IC (A) 180 120 60 8V 0 2 4 6 8 10V 60 8V 0 10 T C = 175oC 0 Collector-Emitter Voltage, VCE (V) 2 4 6 8 10 Collector-Emitter Voltage, VCE (V) Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 180 120 Common Emitter VCE = 20V o Collector Current, IC (A) Collector Current, IC (A) 12V 15V 120 TC = 25 oC 0 VGE=20V 120 60 Common Emitter VGE = 15V T C = 25 oC TC = 25 C 90 o TC = 175 C 60 30 o T C = 175 C 0 0 1 2 3 4 0 5 0 Figure 3. Typical Saturation Voltage Characteristics 20 Common Emitter VGE = 15V Common Emitter Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) 12 Figure 4. Transfer Characteristics 120A 3 60A 2 IC = 30A 1 25 8 Gate-Emitter Voltage,VGE (V) Collector-Emitter Voltage, VCE (V) 4 4 50 75 100 125 150 T C = -40oC 16 120A 12 175 60A 8 IC = 30A 4 0 4 8 12 16 20 Gate-Emitter Voltage, VGE (V) Collector-Emitter Case Temperature, TC (5C) Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH60N60SMD-F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Common Emitter o TC = 25 C 16 120A 12 60A 8 IC = 30A 4 0 4 8 12 16 20 Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) 20 Common Emitter o TC = 175 C 16 120A 12 60A 8 IC = 30A 4 0 20 4 Gate-Emitter Voltage, VGE (V) Figure 7. Saturation Voltage vs. VGE Gate-Emitter Voltage, VGE (V) Capacitance (pF) 16 20 15 C ies 1000 Coes Common Emitter VGE = 0V, f = 1MHz 100 C res 12 VCC = 100V 9 6 3 Common Emitter o o TC = 25 C T C = 25 C 11 0 0 30 0 50 1000 Switching Time (ns) 100m s 10 ms 200 Common Emitter VCC = 400V, VGE = 15V IC = 60A 10m s 10 150 Figure 10. Gate Charge Characteristics 300 100 100 Gate Charge, Qg(nC) Figure 9. Capacitance Characteristics 1ms DC *Notes: 1 300V 200V Collector-Emitter Voltage, VCE (V) Collector Current, IC (A) 12 Figure 8. Saturation Voltage vs. VGE 10000 50 8 Gate-Emitter Voltage, VGE(V) o o TC = 25 C o TC = 175 C tr 100 td(on) 1. TC = 25 C o 2. TJ v175 C 3. Single Pulse 0.1 1 10 100 10 1000 0 10 20 30 40 Collector-Emitter Voltage, VCE (V) Gate Resistance, RG (W) Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance www.onsemi.com 6 50 FGH60N60SMD-F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 500 10000 Common Emitter VCC = 400V, VGE = 15V IC = 60A 100 td(off) o TC = 175 C Switching Time (ns) Switching Time (ns) o TC = 25 C 1000 tf 100 tr td(on) 10 Common Emitter VGE = 15V, R G = 3 W o TC = 25 C o TC = 175 C 10 0 10 20 30 40 1 50 0 30 60 90 Gate Resistance, RG (W) 1000 10 Eon Switching Loss (mJ) Switching Time (ns) td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 3 W o 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 60A o TC = 25 C TC = 25 C o o TC = 175 C 0 30 60 90 120 TC = 175 C 0.1 150 0 10 20 30 40 50 Gate Resistance, RG (W) Collector Current, IC (A) Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 300 50 Common Emitter VGE = 15V, RG = 3 W 100 o TC = 25 C 10 Collector Current, IC (A) Switching Loss (mJ) 150 Figure 14. Turn-on Characteristics vs. Collector Current Figure 13. Turn-off Characteristics vs. Gate Resistance 1 120 Collector Current, IC (A) o TC = 175 C Eon 1 Eoff 10 Safe Operating Area o 0.1 0 30 60 90 120 1 150 VGE = 15V, TC v175 C 1 10 100 1000 Collector-Emitter Voltage, VCE (V) Collector Current, IC (A) Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics www.onsemi.com 7 FGH60N60SMD-F085 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 15 200 Reverse Current, Irr (A) Forward Current, IF (A) o TC = 25 C 100 o TC = 175 C 10 o T C = 125 C o TC = 75 C o TC = 175 C 12 di/dt = 200A/ ms 9 100A/ ms 6 di/dt = 200A/ ms 3 o TC = 25 C 1 0 1 100A/ ms 2 3 0 4 0 60 Forward Current, IF (A) Forward Voltage, VF (V) Figure 20. Reverse Recovery Current 200 o o Reverse Recovery Time, Trr (ns) T C = 25 C 200A/ ms T C = 175 C 600 di/dt = 100A/ ms 400 200 0 200A/ ms 0 di/dt = 100A/ ms 20 40 TC = 25oC o di/dt = 100A/ ms TC = 175 C 150 200A/ ms 100 di/dt = 100A/ ms 50 200A/ ms 0 60 0 20 40 Figure 21. Stored Charge Figure 22. Reverse Recovery Time 0.5 0.5 0.1 0.2 0.01 0.1 0.05 0.02 PDM 0.01 single pulse 1E-3 1E-5 60 Forward Current, IF (A) Forward Current, IF (A) Thermal Response (Zthjc) Stored Recovery Charge, Qrr (nC) Figure 19. Forward Characteristics 800 60 60 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 Rectangular Pulse Duration (sec) Figure 23. Transient Thermal Impedance of IGBT www.onsemi.com 8 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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