© Semiconductor Components Industries, LLC, 2013
January, 2020 − Rev. 4
1Publication Order Number:
FGH60N60SMD−F085/D
IGBT - Field Stop
600 V, 60 A
FGH60N60SMD-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop Trench IGBTs offer the optimum
performance for Automotive chargers, Solar Inverter, UPS and Digital
Power Generator where low conduction and switching losses are
essential.
Features
•Maximum Junction Temperature: TJ = 175°C
•Positive Temperature Co−efficient for easy Parallel Operating
•High Current Capability
•Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
•High Input Impedance
•Tightened Parameter Distribution
•This Device is Pb−Free and is RoHS Compliant
•Qualified to Automotive Requirements of AEC−Q101
Applications
•Automotive Chargers, Converters, High Voltage Auxiliaries
•Solar Inverters, UPS, SMPS, PFC
TO−247−3LD
CASE 340CK
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
VCES IC
600 V 60 A
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60N60SMD = Specific Device Code
COLLECTOR
(FLANGE)
E
CG
$Y&Z&3&K
FGH60N60
SMD
E
C
G
FGH60N60SMD−F085
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2
ABSOLUTE MAXIMUM RATINGS
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ±20 V
ICCollector Current TC = 25°C 120 A
TC = 100°C 60 A
ICM (Note 1) Pulsed Collector Current 180 A
IFDiode Forward Current TC = 25°C 60 A
TC = 100°C 30 A
IFM (Note 1) Pulsed Diode Maximum Forward Current 180 A
PDMaximum Power Dissipation TC = 25°C 600 W
TC = 100°C 300 W
TJOperating Junction Temperature −55 to +175 °C
TSTG Storage Temperature Range −55 to +175 °C
TLMaximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol Parameter Max. Unit
RqJC (IGBT)
(Note 2)
Thermal Resistance, Junction to Case 0.25 _C/W
RqJC (Diode) Thermal Resistance, Junction to Case 1.1 _C/W
RqJA Thermal Resistance, Junction to Ambient (PCB Mount) (Note 2) 45 _C/W
2. Rthjc for TO−247 : according to Mil standard 883−1012 test method. Rthja for TO−247 : according to JESD51−2, test method environmental
condition and JESD51−10, test boards for through hole perimeter leaded package thermal measurements. JESD51−3 : Low Effective
Thermal Conductivity Test Board for Leaded Surface Mount Package.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Packing Method Qty per Tube
FGH60N60SMD FGH60N60SMD−F085 TO−247 Tube 30ea
FGH60N60SMD−F085
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3
ELECTRICAL CHARACTERISTICS OF THE IGBT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 mA600 − − V
DBVCES / DTJTemperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 mA−0.22 −V/°C
ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA
ICES at 80 % *BVCES, 175 °C− − 1100
IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICS
VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE 3.5 4.7 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, −1.8 2.5 V
IC = 60 A, VGE = 15 V,
TC = 175°C−2.14 −V
DYNAMIC CHARACTERISTICS
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
−2780 3700 pF
Coes Output Capacitance −260 345 pF
Cres Reverse Transfer Capacitance −80 110 pF
SWITCHING CHARACTERISTICS
Td(on) Turn−On Delay Time VCC = 400 V, IC = 60 A,
RG = 3 W, VGE = 15 V,
Inductive Load, TC = 25°C
−22 29 ns
TrRise Time −46 60 ns
Td(off) Turn−Off Delay Time −116 151 ns
TfFall Time −14 18 ns
Eon Turn−On Switching Loss −1.59 2.23 mJ
Eoff Turn−Off Switching Loss −0.39 0.55 mJ
Ets Total Switching Loss −1.98 2.78 mJ
Td(on) Turn−On Delay Time VCC = 400 V, IC = 60 A,
RG = 3 W, VGE = 15 V,
Inductive Load, TC = 175°C
−22 28 ns
TrRise Time −44 58 ns
Td(off) Turn−Off Delay Time −124 161 ns
TfFall Time −15 20 ns
Eon Turn−On Switching Loss −2.41 3.13 mJ
Eoff Turn−Off Switching Loss −1.08 1.42 mJ
Ets Total Switching Loss −3.49 4.55 mJ
QgTotal Gate Charge VCE = 400 V, IC = 60 A,
VGE = 15 V
−187 280 nC
Qge Gate to Emitter Charge −20 29 nC
Qgc Gate to Collector Charge −92 138 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH60N60SMD−F085
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4
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
VFM Diode Forward Voltage IF = 30 A TC = 25°C−2.1 2.7 V
TC = 175°C−1.48 −
Trr Diode Reverse Recovery Time IF = 30 A,
dIF/dt = 200 A/ms
TC = 25°C−33 42 ns
TC = 175°C−115 −
Qrr Diode Reverse Recovery Charge TC = 25°C−53 69 nC
TC = 175°C−606 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH60N60SMD−F085
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5
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation
Voltage Characteristics Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE
Collector−Emitter Voltage, VCE (V)
Collector Current, IC (A)
Collector−Emitter Voltage, VCE (V)
Collector Current, IC (A)
Gate−Emitter Voltage,VGE (V)
Collector Current, IC (A)
Collector−Emitter Case Temperature, TC (5C)
Collector−Emitter Voltage, VCE (V)
Gate−Emitter Voltage, VGE (V)
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
Collector Current, IC (A)
4 8 12 16 20
0
4
8
12
16
20
0246810
0
60
120
180
8V
VGE
=20V
TC = 25oC
15V
12V 10V
012345
0
60
120
180
Common Emitter
VGE = 15V
TC
= 25oC
TC
= 175oC
25 50 75 100 125 150 175
1
2
3
4
60A
120A
IC = 30A
Common Emitter
VGE = 15V
0246810
0
60
120
180
8V
VGE=20V
TC = 175oC
15V 12V
10V
04812
0
30
60
90
120
Common Emitter
VCE
= 20V
TC
= 25oC
TC
= 175oC
IC = 30A
120A
60A
Common Emitter
TC
= −40
oC
FGH60N60SMD−F085
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6
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics
vs. Gate Resistance
Gate−Emitter Voltage, VGE (V)
Collector−Emitter Voltage, VCE (V)
Gate−Emitter Voltage, VGE(V)
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
Capacitance (pF)
Gate Charge, Qg(nC)
Gate−Emitter Voltage, VGE (V)
Collector Current, IC (A)
Gate Resistance, RG (W)
Switching Time (ns)
Collector−Emitter Voltage, VCE (V)
4 8 121620
0
4
8
12
16
20
IC = 30A
120A
60A
Common Emitter
TC = 25oC
4 8 121620
0
4
8
12
16
20
IC = 30A
120A
60A
Common Emitter
TC = 175oC
11 0
50
100
1000
10000
Common Emitter
VGE = 0V, f = 1MHz
TC
= 25oC
Cres
Coes
Cies
30 0 50 100 150 200
0
3
6
9
12
15
200V
Common Emitter
TC = 25oC
VCC = 100V 300V
1 10 100 1000
0.1
1
10
100
300
1ms
10 ms
DC
*Notes:
1. TC = 25
oC
2. TJv 175oC
3. Single Pulse
10ms
100ms
0 1020304050
10
100
1000
Common Emitter
VCC = 400V, VGE
= 15V
IC = 60A
TC
= 25oC
TC
= 175oC
td(on)
tr
FGH60N60SMD−F085
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7
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 13. Turn−off Characteristics
vs. Gate Resistance
Figure 14. Turn−on Characteristics
vs. Collector Current
Figure 15. Turn−off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics
Switching Time (ns)
Gate Resistance, RG (W)
Switching Time (ns)
Collector Current, IC (A)
Switching Time (ns)
Collector Current, IC (A)
Switching Loss (mJ)
Gate Resistance, RG (W)
Switching Loss (mJ)
Collector Current, IC (A)
Collector Current, IC (A)
Collector−Emitter Voltage, VCE (V)
0 1020304050
10
100
1000
10000
Common Emitter
VCC = 400V, VGE
= 15V
IC = 60A
TC = 25oC
TC = 175oCtd(off)
tf
0 30 60 90 120 150
1
10
100
500
Common Emitter
VGE = 15V, RG
= 3
TC = 25oC
TC = 175oC
tr
td(on)
0 30 60 90 120 150
1
10
100
1000
Common Emitter
VGE
= 15V, RG = 3
TC = 25oC
TC = 175oC
td(off)
tf
0 30 60 90 120 150
0.1
1
10
50
Common Emitter
VGE
= 15V, RG = 3
TC = 25oC
TC = 175oC
Eon
Eoff
1
1
10
100
300
Safe Operating Area
VGE = 15V, TCv 175oC
0 1020304050
0.1
1
10
Common Emitter
VCC = 400V, VGE
= 15V
IC = 60A
TC = 25oC
TC = 175oC
Eon
Eoff
W
W
W
10 100 1000
FGH60N60SMD−F085
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8
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Reverse Current, Irr (A)
Forward Current, IF (A)
Reverse Recovery Time, Trr (ns)
Forward Current, IF (A)
Forward Current, IF (A)
Forward Voltage, VF (V)
Stored Recovery Charge, Qrr (nC)
Forward Current, IF (A)
Thermal Response (Zthjc)
Rectangular Pulse Duration (sec)
Figure 23. Transient Thermal Impedance of IGBT
01234
1
10
100
200
TC = 175oC
TC = 75oC
TC = 25oC
TC
= 125oC
060
0
3
6
9
12
15
6060
TC = 25oC
TC = 175oC
di/dt = 200A/
100A/
di/dt = 200A/
100A/
020 4060
0
200
400
600
800
200A/
200A/
di/dt = 100A/
di/dt = 100A/
TC = 25oC
TC = 175oC
020
0
50
100
150
200
TC = 25oC
TC = 175oCdi/dt = 100A/
200A/
di/dt = 100A/
200A/
40 60
1E−51E−41E−3 0.01 0.1
1E−3
0.01
0.1
0.5
0.01
0.02
0.1
0.05
0.2
single pulse
Duty Factor, D = t1/t2
Peak T
j = Pdm x Zthjc + TC
0.5
t1
PDM
t2
ms
ms
ms
ms
ms
ms
msms
ms
ms
ms
ms
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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TO−247−3LD SHORT LEAD
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