T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 1 of 6
2N3418S thru 2N3421S
Availa ble on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
Qualified Levels:
JAN, JANTX and
JANTXV
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-5 and low profile U4 packages. Microsemi also offers
numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(leaded)
2N3418 – 2N3421
U4 package
(surface mount)
2N3418U4 – 2N3421U4
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3418 through 2N3421 series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393.
• RoHS compliant versions available (commercial grade only).
• VCE(sat) = 0.25 V @ Ic = 1 A.
• Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA.
• Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -10 0 mA.
APPLICA TIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliab ility applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N3418S
2N3420S
2N3419S
2N3421S
Unit
Collector-Emitter Voltage VCEO 60 80 V
Collector-Base Voltage VCBO 85 125 V
Emitter-Base Voltage VEBO 8 V
Collector Current
tp <= 1 ms, duty cycle <= 50% IC
3
5 A
Total Power Dissipation
@ TA = +25 °C
@ TC = +100 °C (2) PD 1
5 W
Operating & Storage Junction Temperature Range
T
J
, T
stg
-65 to +200
°C
Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C.
2. Derate linearly 150 mW/°C for TC > +100 °C.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 2 of 6
2N3418S thru 2N3421S
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3418 S (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Short-Leaded package
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cutoff current, base open.
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter .
IEBO
Emitter cutoff current, collector open.
hFE
Common-emitter static forward current transfer ratio.
TA
Ambient temperature, free-air temperature.
VCEO
Collector-emitter voltage, base open.
VCBO
Collector-emitter voltage, emitter open.
VEBO
Emitter-base voltage, collector open.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 3 of 6
2N3418S thru 2N3421S
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Current
V(BR)CEO
V
I
C
= 50 mA, I
B
= 0
2N3418S, 2N3420S
2N3419S, 2N3421S
60
80
Collector-Emitter Cutoff Current
ICEX
0.3
0.3 µA
V
BE
= -0.5 V, V
CE
= 80 V
VBE = -0.5 V, VCE = 120 V
2N3418S, 2N3420S
2N3419S, 2N3421S
Collector-Base Cutoff Current
VCE = 45 V, IB = 0
VCE = 60 V, IB = 0
2N3418S, 2N3420S
2N3419S, 2N3421S
ICEO
5.0
5.0 µA
Emitter-Base Cutoff Current
VEB = 6.0 V, IC = 0
VEB = 8.0 V, IC = 0
IEBO
0.5
10 µA
ON CHARACTERISTICS (1)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
hFE
I
C
= 100 mA, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
20
40
I
C
= 1.0 A, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
20
40
60
120
I
C
= 2.0 A, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
15
30
I
C
= 5.0 A, V
CE
= 5.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
10
15
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 1.0 A, I
B
= 0.1 A
IC = 2.0 A, IB = 0.2 A
0.25
0.5
Base-Emitter Saturation Voltage
IC = 1.0 A, IB = 0.1 A
IC = 2.0 A, IB = 0.2 A
VBE(sat)
0.6
0.7
1.2
1.4
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio |hfe| 1.3 0.8
IC = 0.1 A, VCE = 10 V, f = 20 MHz
Output Capac ita nc e
Cobo
pF
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
150
NOTES: (1) Pulse Test: Pulse W idth = 300 µs, Dut y Cycle ≤ 2.0%.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 4 of 6
2N3418S thru 2N3421S
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) continued
SWITCHING CHARACTERISTICS
Parameters / Test Conditions (for all symbols) Symbol Min. Max. Unit
Delay Time
Rise Time
V
BE(off)
= -3.7 V,
IC = 1.0 A, IB1 = 100 mA
t
d
tr
0.08
0.22
µs
Storage Time
Fall Time
VBE(off) = -3.7 V,
IC = 1.0 A, IB2 = -100 mA
ts
tf
1.10
0.20
µs
Turn-Off Time
V
BE(off)
= -3.7 V, I
C
= 1.0 A,
IB2 = -100 mA, RL = 20 Ω
toff 1.20 µs
SAFE OPERATING AREA
DC Test
TC = +100 °C, 1 cycle, t > 1.0 s
Test 1
VCE = 5.0 V, IC = 3.0 A
Test 2
VCE = 37 V, IC = 0.4 A
Test 3
VCE = 60 V, IC = 0.185 A
VCE = 80 V, IC = 0.12 A
2N3418S, 2N3420S
2N3419S, 2N3421S
Clamped Switching TA = +25 °C, IB = 0.5 A, IC = 3.0 A
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 5 of 6
2N3418S thru 2N3421S
GRAPHS
TC (oC) (Case)
FIGURE 1
Temperature-Power Derating Curve
NOTES: Thermal Resistance Junction to Case = 4.5 oC/W
Max Finish-Alloy Temp = 175.0 oC
TIME (s)
FIGURE 2
Maximum Thermal Impedance
NOTE: TC = +25 ° C, Thermal Resis t ance RθJC = 4. 5 °C/W
DC Operation Maximum Rating (W)
THETA (oC/W)
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 6 of 6
2N3418S thru 2N3421S
PACKAGE DIMENSIONS
1. Dimens i ons are in inches.
2. Millim et ers are given for general inform ation only.
3. Symbol TL is measured from HD maximum.
4. Details of outl i ne in this zone are optional.
5. Symbol CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of TP relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. Lead num ber 3 is electricall y connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .021 inch (0.53 mm).
10. Lead num ber 4 omitted on this variation.
11. Symbol r applied t o both inside corners of tab.
12. For trans istor t ypes 2N3418S, 2N3419S, 2N3420S, 2N3421S, LL is .500 (12.70 mm) minimum and .750 (19.05 mm) maximum.
13. In accordanc e with ASME Y14.5M, diam eters are equivalent to Φx symbology.
14. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
LL
.500
.750
12.7
19.05
7
LU
See notes 7, 13, 14
L1
.050
1.27
7
L2
.250
6.35
7
P
.100
2.54
5
Q
.040
1.02
4
TL
.029
.045
0.74
1.14
3, 10
TW
.028
.034
0.71
.86
9, 10
r
.010
0.25
11
α
45° TP
45° TP
6