5SNR13H2500 - Abb Switzerland Ltd. Semiconductors

VCE = 2500 V

IC = 1300 A

ABB StakPak H Series

Press-pack IGBT

5SNR 13H2500

Doc. No. 5SYA1517-02 Ma

. 04

• High SOA

• Fails into stable shorted state

• High tolerance to uneven

mounting pressure

• Designed for series connection

• Explosion resistant package

• Modular design concept,

available for a wide range of

current ratings

Maximum Rated Values1)

Parameter2) Symbol Conditions min max Unit

Collector-emitter voltage VCES 2500 V

DC collector current IC T

c = 75 °C 1300 A

Repetitive peak collector

current ICM 2600 A

Gate-emitter voltage VGES ± 20 V

Total power dissipation Ptot T

c = 25 °C, (IGBT) 12000 W

DC forward current IF T

c = 75 °C 1300 A

Repetitive peak forward

current IFM 2600 A

Surge current IFSM VR = 0 V, tp = 10 ms, Tvj = 125 °C,

half-sinewave 16.5 kA

IGBT short circuit SOA tpsc VCC = 1500 V, VCEM ≤ 2500 V,

VGE ≤15V 10 µs

Junction temperature Tvj 5 125 °C

Storage temperature Tstg -40 70 °C

Mounting force 2) F

M 50 80 kN

1)Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9

2)For detailed mounting instructions refer to ABB document no. 5SYA 2037-02

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5SNR 13H2500

IGBT Characteristic Values3)

Parameter Symbol Conditions min typ max Unit

Tvj = 25°C 2.20 2.60 V

Collector-emitter saturation

voltage VCEsat IC = 1300 A,

VGE = 15 V Tvj = 125°C 2.70 3.00 V

Collector cut-off current ICES V

CE = 2500 V, VGE = 0 V, Tvj = 125 °C 25 65 mA

Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C ±500 nA

Gate-emitter threshold voltage VGE(TO) I

C = 240 mA, VCE = VGE, Tvj = 25 °C 5 7 8.5 V

Total gate charge Qge IC = 1300 A, VCE = 1250 V, VGE = -15 to

15 V 12.5 µC

Input capacitance Cies 210 nF

Output capacitance Coes 17 nF

Reverse transfer capacitance Cres

VCE = 25 V, VGE = 0 V, f = 1 MHz

3.5 nF

Tvj = 25°C 0.85 µs

Turn-on delay time td(on) Tvj = 125°C 0.8 µs

Tvj = 25°C 0.6 µs

Rise time tr

VCC = 1250 V,

IC = 1300 A,

RG = 3.9 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load Tvj = 125°C 0.6 µs

Tvj = 25°C 1.7 µs

Turn-off delay time td(off) Tvj = 125°C 1.8 µs

Tvj = 25°C 0.5 µs

Fall time tf

VCC = 1250 V,

IC = 1300 A,

RG = 3.9 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load Tvj = 125°C 0.6 µs

Tvj = 25°C 1.5 J

Turn-on energy Eon

VCC = 1250 V,

IC = 1300 A,

RG = 3.9 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load

Tvj = 125°C 2.0 J

Tvj = 25°C 1.6 J

Turn-off energy Eoff

VCC = 1250 V,

IC = 1300 A,

RG = 3.9 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load

Tvj = 125°C 2.0 J

Tvj = 25°C 8000 A

Short circuit current ISC

VCC = 1500 V,

RGon = 3.9 Ω,

RGoff = 27 Ω,

VGE ≤ 15 V,

Lσ = 200 nH

tpsc =10 µs

Tvj = 125°C 7500 A

3)Characteristic values according to IEC 60747-9

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1517-02 May. 04 page 2 of 9

5SNR 13H2500

Diode Characteristic Values4)

Parameter Symbol Conditions min typ max Unit

Tvj = 25°C 1.95 2.20 V

Forward voltage VF I

F = 1300 A Tvj = 125°C 1.90 2.20 V

Tvj = 25°C 900 A

Reverse recovery current Irr Tvj = 125°C 1100 A

Tvj = 25°C 700 µC

Reverse recovery charge Qrr Tvj = 125°C 1200 µC

Tvj = 25°C 1.3 µs

Reverse recovery time trr Tvj = 125°C 1.6 µs

Tvj = 25°C 0.65 J

Reverse recovery energy Erec

VCC = 1250 V,

IF = 1300 A,

RG = 3.9 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load

Tvj = 125°C 1.1 J

4)Characteristic values according to IEC 60747-2

Thermal Properties

Parameter Symbol Conditions min typ max Unit

IGBT thermal resistance

junction to case

Rth(j-c)

IGBT 8.2 K/kW

Diode thermal resistance

junction to case

Rth(j-c)

Diode

16.4 K/kW

IGBT thermal resistance case

to heatsink

Rth(c-h)

IGBT 1.5 K/kW

Diode thermal resistance

case to heatsink

Rth(c-h)

Diode

Heatsink flatness :

Complete module area < 100 µm

Each submodule area < 20 µm

Roughness : < 1.6 µm 3 K/kW

Operating junction

temperature Tvjop 5 125 °C

Mechanical Properties

Parameter Symbol Conditions min typ max Unit

Dimensions L* W* H Typical , see outline drawing 236*150*26 mm

Clearance distance DC acc. IEC 60664-1 and EN50124-1 10 mm

Surface creepage distance DSC acc. IEC 60664-1 and EN50124-1 23 mm

Weight 2.1 kg

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1517-02 May. 04 page 3 of 9

5SNR 13H2500

Electrical configuration

AE (Aux. Emitter)G (Gate)

C (Collector) E (Emitter)

Outline drawing

StakPak H4

This is an electrostatic sensitive device.

Please observe the international standard IEC 60747-1, chapter IX.

This product has been designed and qualified for Industrial Level.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1517-02 May. 04 page 4 of 9

5SNR 13H2500

0.5 1.5 2.5 3.5 4.5

VCE [V]

500

1000

1500

2000

2500

3000

IC [A]

25 °C

125 °C

0.5 1.0 1.5 2.0 2.5

VF [V]

500

1000

1500

2000

2500

3000

IF [A]

25 °C

125 °C

Fig. 1 Typical IGBT on-state characteristics Fig. 2

Typical diode on-state characteristics

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

5500

6000

02468

VCE[V]

IC[A]

VGE = 9 V

VGE = 10 V

VGE = 11 V

VGE = 12 V

VGE = 13 V

VGE = 14 V

VGE = 15 V

Tvj = 25 °C

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

5500

6000

02468

VCE[V]

IC[A]

VGE = 9 V

VGE = 10 V

VGE = 11 V

VGE = 12 V

VGE = 13 V

VGE = 14 V

VGE = 15 V

Tvj = 125 °C

Fig. 3 Typical IGBT output characteristics

at Tvj = 25 °C

Fig. 4 Typical IGBT output characteristics

at Tvj = 125 °C

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1517-02 May. 04 page 5 of 9

5SNR 13H2500

8 9 10 11 12 13 14 15

VGE [V]

1000

2000

3000

4000

5000

IC [A]

VCE = 15 V

25° C

125 °C

0 500 1000 1500 2000 2500

VCE [V]

500

1000

1500

2000

2500

3000

Ic [A]

VCC ≤ 1500 V

VGE = +/- 15 V

Rgon = 3.9 Ohm

Rgoff = 3.9 Ohm

Tvj = 125°C

Fig. 5 Typical IGBT transfer characteristics Fig. 6 IGBT turn-off safe operating area

(RBSOA)

0 5 10 15 20 25 30

VCE [V]

100

C [nF]

VOSC = 50 mV

VGE = 0 V

f = 1 MHz

Cies

Cres

Coes

02468

Qge [µC]

VGE [V]

VCC = 750, 1000, 1250 V

IC = 1300 A

VGE = - 15 ...+ 15 V

Tvj = 25°C

VCC = 750 V

VCC = 1250 V

Fig. 7 Typical IGBT capacitances versus

collector-emitter voltage

Fig. 8 Typical IGBT gate charge

characteristics

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1517-02 May. 04 page 6 of 9

5SNR 13H2500

0 500 1000 1500 2000 2500

ICE [A]

Eon, Eoff [J]

VCC = 1250 V

VGE = +/- 15 V

RGon = 3.9 Ohm

RGoff = 3.9 Ohm

Tvj = 125°C

Eoff Eon

0 4 8 12 16 20

RG [Ohm]

Eon, Eoff [J]

VCC = 1250 V

VGE = +/- 15 V

ICE = 1300 A

Tvj = 125°C

Eoff

Eon

Fig. 9 Typical IGBT switching energies per

pulse versus on-state current

Fig. 10 Typical IGBT switching energies per

pulse versus gate resistor

0 500 1000 1500 2000 2500 3000

ICE [A]

0.0

0.5

1.0

1.5

2.0

2.5

tf, tdoff [µs]

VCC = 1250 V

VGE = +/- 15 V

RGon = 3.9 Ohm

RGoff = 3.9 Ohm

Tvj = 125°C

tdoff

tdon

0.0

0.2

0.4

0.6

0.8

1.0

tr, tdon [µs]

0 4 8 1216202

RG [Ohm]

tf, tdoff, tr, tdon [µs]

VCC = 1250 V

ICE = 1300 A

VGE = +/- 15 V

Tvj = 125°C

tdoff

tdon

Fig. 11 Typical IGBT switching times versus

on-state current

Fig. 12 Typical IGBT switching times versus

gate resistor

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1517-02 May. 04 page 7 of 9

5SNR 13H2500

0 500 1000 1500 2000 2500 3000

IF [A]

500

1000

1500

2000

Irr, Qrr [A, µC]

VCC = 1250 V

VGE = +/- 15 V

RGon = 3.9 Ohm

Tvj = 125°C

Irr

Qrr

Erec

0.0

0.5

1.0

1.5

2.0

Erec [J]

0481216

RG [Ohm]

300

600

900

1200

1500

Irr, Qrr [A, µC]

VCC = 1250 V

ICE = 1300 A

VGE = +/- 15 V

Tvj = 125°C

Qrr

Erec

Irr

0.0

0.4

0.8

1.2

1.6

2.0

Erec [J]

Fig. 13 Typical diode reverse recovery

characteristics versus forward current

Fig. 14 Typical diode reverse recovery

characteristics versus gate resistor

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1517-02 May. 04 page 8 of 9

5SNR 13H2500

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z

t/-

ic)-(jth i

∑

i 1 2 3 4

Ri(K/kW) 3.426 3.459 0.709 0.603

IGBT

τi(ms) 580.8 53.11 3.286 0.609

Ri(K/kW) 6.853 6.917 1.417 1.206

DIODE

τi(ms) 580.8 53.11 3.286 0.609

10-3 10-2 10-1 100101

2 3 4 5 6 789 2 3 4 5 6 7 89 2 3 4 5 6 7 89 2 3 4 5 6 789

t [s]

100

101

ZthIC [K/kW]

Fm = 50...80 kN

Double Side Cooling

IGBT

Diode

Fig.15 Maximum thermal impedance of IGBT

and diode versus time

Environmental class according to IEC 60721

Mode Class Document - no.

Storage IE 11 5 SZK 9101-01

Transportation IE 23 5 SZK 9102-01

Operation IE 33 5 SZK 9103-01

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1517-02 May. 04

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors