© 2020 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 1000 V
VDGR TJ= 25C to 150C, RGS = 1M1000 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 32 A
IDM TC= 25C, Pulse Width Limited by TJM 96 A
IATC= 25C 32 A
EAS TC= 25C 2 J
dv/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns
PDTC= 25C 1250 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
LMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V
IGSS VGS = 30V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 50 A
TJ = 125C 3 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 320 m
IXFK32N100Q3
IXFX32N100Q3
VDSS = 1000V
ID25 = 32A
RDS(on) 320m
trr 300ns
DS100300C(1/20)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
International Standard Packages
Low Intrinsic Gate Resistance
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
G = Gate D = Drain
S = Source Tab = Drain
PLUS247
(IXFX)
Tab
G
DS
S
G
D
Tab
TO-264
(IXFK)
D
G
S
Q3-Class
HiperFETTM
Power MOSFET
IXFK32N100Q3
IXFX32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 20 32 S
Ciss 10990 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 745 pF
Crss 67 pF
RGi Gate Input Resistance 0.20
td(on) 45 ns
tr 15 ns
td(off) 54 ns
tf 12 ns
Qg(on) 195 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 nC
Qgd 78 nC
RthJC 0.10C/W
RthCS 0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 32 A
ISM Repetitive, Pulse Width Limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 300 ns
QRM 1.2 C
IRM 12.3 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
IF = 16A, -di/dt = 100A/s
VR = 100V, VGS = 0V
© 2020 IXYS CORPORATION, All Rights Reserved
IXFK32N100Q3
IXFX32N100Q3
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
4
8
12
16
20
24
28
32
0 1 2 3 4 5 6 7 8 9 10 11
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
7V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
4
8
12
16
20
24
28
32
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
6V
7V
5V
V
GS
= 10V
Fig. 4. R
DS(on)
Normalized to I
D
= 16A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 10 20 30 40 50 60
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXFK32N100Q3
IXFX32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 20V
Fig. 8. Transconductance
0
10
20
30
40
50
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
V
DS
= 20V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8-R44)10-10-12
IXFK32N100Q3
IXFX32N100Q3
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.2
IXFK32N100Q3
IXFX32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1 = Gate
2,4 = Drain
3 = Source
TO-264 Outline
PLUS247TM Outline
1 = Gate
2,4 = Drain
3 = Source
L1
D
E
Q
A
B
S
C
b1
A1
0R
0R1
DQ1
A
J
L
C
e
c
b
A
M
M
b2
B
DK MM
0P
0P1
4
321
BACK SIDE
b4
A1
L1
A2 E1
D2
E
D
R
A
Q
C
L
b
2 PLCS
3 PLCS 2 PLCS
e
21 3 4
b2
© 2020 IXYS CORPORATION, All Rights Reserved
IXFK32N100Q3
IXFX32N100Q3
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.