2N6847
P-Channel MOSFET.
VDSS = 200V
ID = 2.5A
RDS(ON) = 1.5
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter Min. Typ. Max. Units
VDSS Drain – Source Breakdown Voltage 200 V
ID Continuous Drain Current 2.5 A
PD Power Dissipation 20 W
RDS(ON) Static Drain – Source On–State Resistance 1.5
CISS Input Capacitance 330 pF
Qg Total Gate Charge 15 nC
ttd(on) Turn–On Delay Time 50 ns
ttr Rise Time 70 ns
ttd(off) Turn–Off Delay Time 40 ns
t
f
Fall Time 50 ns
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.u
k
.
Semel ab Plc rese rves the right to change test conditions, parameter limits and package dimensions without notice. Informat ion furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omission s dis co ver e d in its us e.
Generated
11-Oct-02
TO39 (TO205AF)
PINOUTS
1 – Source 2 – Gate 3 - Drain
P-Channel MOSFET
in a
Hermetically sealed TO39
Metal Package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
123