Not Recommended
for New Designs
Rev. 1.7 4/18 Copyright © 2018 by Silicon Laboratories Si8430/31/35
Si8430/31/35
LOW-POWER TRIPLE-CHANNEL DIGITAL ISOLATOR
Features
Applications
Safety Regulatory Approvals
Description
Silicon Lab's family of ultra-low-power digital isolators are CMOS
devices offering substantial data rate, propagation delay, power, size,
reliability, and external BOM advantages when compared to legacy
isolation technologies. The operating parameters of these products
remain stable across wide temperature ranges throughout their
service life, and only VDD bypass capacitors are required.
Data rates up to 150 Mbps are supported, and all devices achieve
worst-case propagation delays of less than 10 ns. All products are
safety certified by UL, CSA, and VDE and support withstand voltages
of up to 2.5 kVRMS. These devices are available in 16-pin wide- and
narrow-body SOIC packages.
High-speed operation
DC to 150 Mbps
No start-up initialization required
Wide Operating Supply Voltage:
2.70–5.5 V
Wide Operating Supply Voltage:
2.70–5.5V
Ultra low power (typical)
5 V Operation:
< 1.6 mA per channel at 1 Mbps
< 6 mA per channel at 100 Mbps
2.70 V Opera tio n:
< 1.4 mA per channel at 1 Mbps
< 4 mA per channel at 100 Mbps
High electromagnetic immunity
Up to 2500 VRMS isolation
60-year life at rated wo rking
voltage
Precise timing (typica l)
<10 ns worst case
1.5 ns pulse width distortion
0.5 ns channel-channel skew
2 ns propagation delay skew
6 ns minimum pulse width
Transient Immunity 25 kV/µs
AEC-Q100 qualified
Wide temperature range
–40 to 125 °C at 150 Mbps
RoHS-compliant packages
SOIC-16 wide body
SOIC-16 narrow body
Industrial automation systems
Hybrid electric vehicles
Isolated switch mode supplies
Isolated ADC, DAC
Motor control
Power inverters
Communications systems
UL 1577 recognized
Up to 2500 VRMS for 1 minute
CSA component notice 5A
approval
IEC 60950-1, 61010-1
(reinforced insulation)
VDE certification conformity
IEC 60747-5-2
(VDE0884 Part 2)
Ordering Information:
See page 26.
Si8430/31/35
Rev. 1.7 2
Not Recommended
for New Designs
TABLE OF CONTENTS
Section Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
2.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
2.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
2.3. Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
2.4. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
2.5. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
3. Errata and Design Migration Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
3.1. Enable Pin Causes Outputs to Go Low (Revision C Only) . . . . . . . . . . . . . . . . . . . .24
3.2. Power Supply Bypass Capacitors (Revision C and Revision D) . . . . . . . . . . . . . . . .24
3.3. Latch Up Immunity (Revision C Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
4. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
6. Package Outline: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
7. Land Pattern: 16-Pin Wide-Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
8. Package Outline: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
9. Land Pattern: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
10. Top Marking: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
10.1. 16-Pin Wide Body SOIC Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
10.2. Top Marking Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
11. Top Marking: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
11.1. 16-Pin Narrow Body SOIC Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
11.2. Top Marking Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
Si8430/31/35
Rev. 1.7 3
Not Recommended
for New Designs
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter Symbol Test Condition Min Typ Max Unit
Ambient Operating Temperature* TA150 Mbps, 15 pF, 5 V –40 25 125* °C
Supply Voltage VDD1 2.70 — 5.5 V
VDD2 2.70 — 5.5 V
*Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels,
and supply voltage.
Table 2. Absolute Maximum Ratings1
Parameter Symbol Min Typ Max Unit
Storage Temperature2TSTG –65 — 150 °C
Operating Temperature TA–40 — 125 °C
Supply Voltage (Revision C)3VDD1, VDD2 –0.5 — 5.75 V
Supply Voltage (Revision D)3VDD1, VDD2 –0.5 — 6.0 V
Input Voltage VI–0.5 — VDD + 0.5 V
Output Voltage VO–0.5 — VDD + 0.5 V
Output Current Drive Channel IO——10mA
Lead Solder Temperature (10 s) — — 260 °C
Maximum Isolation Voltage (1 s) — — 3600 VRMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 ° C.
3. See "5. Ordering Guide" on page 26 for more information.
Si8430/31/35
4 Rev. 1.7
Not Recommended
for New Designs
Table 3. Electrical Characteristics
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
High Level Input Voltage VIH 2.0 — — V
Low Level Input Voltage VIL ——0.8V
High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 –0.4 4.8 — V
Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V
Input Leakag e Curr en t IL——±10µA
Output Impedance1ZO—85—
Enable Input High Current IENH VENx =V
IH —2.0—µA
Enable Input Low Current IENL VENx =V
IL —2.0—µA
DC Supply Current (All inputs 0 V or at Supply)
Si8430Ax, Bx and Si8435Bx
VDD1
VDD2
VDD1
VDD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC
—
—
—
—
1.2
1.9
4.2
1.9
1.8
2.9
6.3
2.9
mA
Si8431Ax, Bx
VDD1
VDD2
VDD1
VDD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC
—
—
—
—
1.7
2.0
3.7
3.0
2.6
3.0
5.6
4.5
mA
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8430Ax, Bx and Si8435Bx
VDD1
VDD2
—
—2.7
2.2 4.1
3.3 mA
Si8431Ax, Bx
VDD1
VDD2
—
—2.8
2.7 4.2
4.1 mA
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8430Bx, Si8435Bx
VDD1
VDD2
—
—2.7
3.0 4.1
4.2 mA
Si8431Bx
VDD1
VDD2
—
—3.1
3.2 4.3
4.5 mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
4. Start-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
Rev. 1.7 5
Not Recommended
for New Designs
100 Mbps Supply Current (All inputs = 50 MHz square wav e, CI = 15 pF on all outputs)
Si8430Bx, Si8435Bx
VDD1
VDD2
—
—2.9
14.3 4.4
17.9 mA
Si8431Bx
VDD1
VDD2
—
—7.0
11.0 8.8
13.8 mA
Timing Characteristics
Si843xAx
Maximum Data Rate 0—1.0Mbps
Minimum Pulse Width — — 250 ns
Propaga tion Delay tPHL, tPLH See Figure 2 — — 35 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 2 — — 25 ns
Propagation Delay Skew2tPSK(P-P) ——40ns
Channel-Channel Skew tPSK ——35ns
Si843xBx
Maximum Data Rate 0 — 150 Mbps
Minimum Pulse Width ——6.0ns
Propaga tion Delay tPHL, tPLH See Figure 2 3.0 6 .0 9.5 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 2 — 1.5 2.5 ns
Propagation Delay Skew2tPSK(P-P) —2.03.0ns
Channel-Channel Skew tPSK —0.51.8ns
Table 3. Electrical Characteristics (Continued)
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
4. Start-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
6 Rev. 1.7
Not Recommended
for New Designs
All Models
Output Rise Time trCL=15pF
See Figure 2 —3.85.0ns
Output Fall Time tfCL=15pF
See Figure 2 —2.83.7ns
Common Mode Transient
Immunity CMTI VI=V
DD or 0 V — 25 — kV/µs
Enable to Data Valid3ten1 See Figure 1 — 5.0 8. 0 ns
Enable to Data Tri-State3ten2 See Figure 1 — 7.0 9. 2 ns
Start-up Time3,4 tSU —1540µs
Table 3. Electrical Characteristics (Continued)
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
4. Start-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
Rev. 1.7 7
Not Recommended
for New Designs
Figure 1. ENABLE Timing Diagram
Figure 2. Propagation Delay Timing
ENABLE
OUTPUTS
ten1 ten2
Typical
Input tPLH tPHL
Typical
Output trtf
90%
10%
90%
10%
1.4 V
1.4 V
Si8430/31/35
8 Rev. 1.7
Not Recommended
for New Designs
Table 4. Electrical Characteristics
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
High Level Input Voltage VIH 2.0 — — V
Low Level Input Voltage VIL ——0.8V
High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 –0.4 3.1 — V
Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V
Input Leakage Current IL——±10µA
Output Impedance1ZO—85—
Enable Input High Current IENH VENx = VIH —2.0—µA
Enable Input Low Current IENL VENx = VIL —2.0—µA
DC Supply Current (All inputs 0 V or at supply)
Si8430Ax, Bx and Si843 5Bx
VDD1
VDD2
VDD1
VDD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC
—
—
—
—
1.2
1.9
4.2
1.9
1.8
2.9
6.3
2.9
mA
Si8431Ax, Bx
VDD1
VDD2
VDD1
VDD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC
—
—
—
—
1.7
2.0
3.7
3.0
2.6
3.0
5.6
4.5
mA
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8430Ax, Bx and Si843 5Bx
VDD1
VDD2
—
—2.7
2.2 4.1
3.3 mA
Si8431Ax, Bx
VDD1
VDD2
—
—2.8
2.7 4.2
4.1 mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriate ly terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured be tween different units operating at
the same supply voltages, load, and ambient temperature.
3. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
4. S tart-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
Rev. 1.7 9
Not Recommended
for New Designs
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8430Bx, Si843 5B x
VDD1
VDD2
—
—2.7
3.0 4.1
4.2 mA
Si8431Bx
VDD1
VDD2
—
—3.1
3.2 4.3
4.5 mA
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8430Bx, Si843 5B x
VDD1
VDD2
—
—2.8
10.1 4.2
12.6 mA
Si8431Bx
VDD1
VDD2
—
—5.5
8.0 6.9
10.0 mA
Timing Characteristics
Si843xAx
Maximum Data Rate 0—1.0Mbps
Minimum Pulse Width ——250ns
Propagation Delay tPHL, tPLH See Figure 2 — — 35 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 2 — — 25 ns
Propagatio n Delay Skew2tPSK(P-P) — — 40 ns
Channel-Channel Skew tPSK — — 35 ns
Table 4. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriate ly terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured be tween different units operating at
the same supply voltages, load, and ambient temperature.
3. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
4. S tart-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
10 Rev. 1.7
Not Recommended
for New Designs
Si843xBx
Maximum Data Rate 0—150Mbps
Minimum Pulse Width ——6.0ns
Propagation Delay tPHL, tPLH See Figure 2 3.0 6.0 9.5 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 2 — 1.5 2.5 ns
Propagatio n Delay Skew2tPSK(P-P) —2.03.0ns
Channel-Channel Skew tPSK —0.51.8ns
All Models
Output Rise Time trCL=15pF
See Figure 2 —4.36.1ns
Output Fall Time tfCL=15pF
See Figure 2 —3.04.3ns
Common Mode Transient
Immunity CMTI VI=V
DD or 0 V — 25 — kV/µs
Enable to Data Valid3ten1 See Figure 1 — 5.0 8.0 ns
Enable to Data Tri-State3ten2 See Figure 1 — 7.0 9.2 ns
Start-up Time3,4 tSU —1540µs
Table 4. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriate ly terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured be tween different units operating at
the same supply voltages, load, and ambient temperature.
3. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
4. S tart-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
Rev. 1.7 11
Not Recommended
for New Designs
Table 5. Electrical Characteristics1
(VDD1 = 2.70 V, VDD2 = 2.70 V, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
High Level Input Voltage VIH 2.0 — — V
Low Level Input Voltage VIL ——0.8V
High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 –0.4 2.3 — V
Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V
Input Leakage Current IL——±10µA
Output Imp edance2ZO—85—
Enable Input High Current IENH VENx =V
IH —2.0—µA
Enable Input Low Current IENL VENx =V
IL —2.0—µA
DC Supply Current (All inputs 0 V or at supply)
Si8430Ax, Bx and Si8435Bx
VDD1
VDD2
VDD1
VDD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC
—
—
—
—
1.2
1.9
4.2
1.9
1.8
2.9
6.3
2.9
mA
Si8431Ax, Bx
VDD1
VDD2
VDD1
VDD2
All inputs 0 DC
All inputs 0 DC
All inputs 1 DC
All inputs 1 DC
—
—
—
—
1.7
2.0
3.7
3.0
2.6
3.0
5.6
4.5
mA
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8430Ax, Bx and Si8435Bx
VDD1
VDD2
—
—2.7
2.2 4.1
3.3 mA
Si8431Ax, Bx
VDD1
VDD2
—
—2.8
2.7 4.2
4.1 mA
Notes:
1. Specifica tions in this table are also valid at VDD1 = 2.6 V and VDD2 = 2.6 V when the operating temperature range is
constrained to TA= 0 to 85 °C.
2. The nominal ou tput impedance of an isolator driver channel is approximately 85 , ±40%, which is a combina tion of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured be tween different units operating at
the same supply voltages, load, and ambient temperature.
4. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
5. Start-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
12 Rev. 1.7
Not Recommended
for New Designs
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8430Bx, Si8435Bx
VDD1
VDD2
—
—2.7
3.0 4.1
4.2 mA
Si8431Bx
VDD1
VDD2
—
—3.1
3.2 4.3
4.5 mA
100 Mbps Supply Current (All inputs = 50 MHz square wav e, CI = 15 pF on all outputs)
Si8430Bx, Si8435Bx
VDD1
VDD2
—
—2.8
8.0 4.2
10 mA
Si8431Bx
VDD1
VDD2
—
—4.7
6.7 5.9
8.4 mA
Timing Characteristics
Si843xAx
Maximum Data Rate 0—1.0Mbps
Minimum Pulse Width ——250ns
Propagation Delay tPHL, tPLH See F igu re 2 — — 35 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 2 — — 25 ns
Propagation Delay Skew3tPSK(P-P) — — 40 ns
Channel-Channel Skew tPSK — — 35 ns
Table 5. Electrical Characteristics1 (Continued)
(VDD1 = 2.70 V, VDD2 = 2.70 V, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. Specifica tions in this table are also valid at VDD1 = 2.6 V and VDD2 = 2.6 V when the operating temperature range is
constrained to TA= 0 to 85 °C.
2. The nominal ou tput impedance of an isolator driver channel is approximately 85 , ±40%, which is a combina tion of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured be tween different units operating at
the same supply voltages, load, and ambient temperature.
4. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
5. Start-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
Rev. 1.7 13
Not Recommended
for New Designs
Si843xBx
Maximum Data Rate 0—150Mbps
Minimum Pulse Width ——6.0ns
Propagation Delay tPHL, tPLH See Figure 2 3.0 6.0 9.5 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 2 — 1.5 2.5 ns
Propagation Delay Skew3tPSK(P-P) —2.03.0ns
Channel-Channel Skew tPSK —0.51.8ns
All Models
Output Rise Time trCL = 15 pF
See Figure 2 —4.86.5ns
Output Fall Time tfCL = 15 pF
See Figure 2 —3.24.6ns
Common Mode Transient
Immunity CMTI VI=V
DD or 0 V — 25 — kV/µs
Enable to Data Valid4ten1 See Figure 1 — 5.0 8.0 ns
Enable to Data Tri-State4ten2 See Figure 1 — 7.0 9.2 ns
Start-up Time4,5 tSU —1540µs
Table 5. Electrical Characteristics1 (Continued)
(VDD1 = 2.70 V, VDD2 = 2.70 V, TA= –40 to 125 ºC; applies to narrow and wide-body SOIC packages)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. Specifica tions in this table are also valid at VDD1 = 2.6 V and VDD2 = 2.6 V when the operating temperature range is
constrained to TA= 0 to 85 °C.
2. The nominal ou tput impedance of an isolator driver channel is approximately 85 , ±40%, which is a combina tion of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured be tween different units operating at
the same supply voltages, load, and ambient temperature.
4. See "3. Errata and Design Migration Guidelines" on page 24 for more details.
5. Start-up time is the time period from the application of power to valid data at the output.
Si8430/31/35
14 Rev. 1.7
Not Recommended
for New Designs
Table 6. Regulatory Information*
CSA
The Si84xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 VRMS reinforced insulation working voltage; up to 600 VRMS basic insul ation working voltage.
60950-1: Up to 130 VRMS reinforced insulation working voltage; up to 1000 VRMS basic ins ulation working volt-
age.
VDE
The Si84xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 560 Vpeak for basic insulation working voltage.
UL
The Si84xx is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 2500 VRMS isolation vo ltage for basic insulation.
*Note: Regulatory Certifications apply to 2.5 k VRMS rated devices which are producti on tested to 3.0 kVRMS for 1 sec.
For more information, see "5. Ordering Guide" on page 26.
Table 7. Insulation and Safety-Related Specifications
Parameter Symbol Test Condition Value Unit
WB
SOIC-16 NB
SOIC-16
Nominal Air Gap (Clearance)1L(IO1) 8.0 4.9 mm
Nominal External Tracking (Creepage)1L(IO2) 8.0 4.01 mm
Minimum Internal Gap (Internal Clearance) 0.008 0.008 mm
Trac king Resistance
(Proof Tracking Index) PTI IEC60112 600 600 VRMS
Erosion Depth ED 0.040 0.019 mm
Resistance (Input-Output)2RIO 1012 1012
Capacitance (Input-Output)2CIO f=1MHz 2.0 2.0 pF
Input Capacitance3CI4.0 4.0 pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “6. Package Outline:
16-Pin Wide Body SOIC” and “8. Package Outline: 16-Pin Narrow Body SOIC”. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package.
UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance
and creepage limits as 3.9 mm minimum for the NB SOIC-16 package and 7.6 mm minimum for the WB SOIC-16
package.
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.
Si8430/31/35
Rev. 1.7 15
Not Recommended
for New Designs
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter Test Condition Specification
Basic Isolation Group Material Group I
Installation Classification
Rated Mains Voltages < 150 VRMS I-IV
Rated Mains Voltages < 300 VRMS I-III
Rated Mains Voltages < 400 VRMS I-II
Rated Mains Voltages < 600 VRMS I-II
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Parameter Symbol Test Condition Characteristic Unit
Maximum Working Insulation Voltage VIORM 560 V peak
Input to Output Test Voltage VPR
Method b1
(VIORM x 1.875 = VPR, 100%
Production Test, tm=1 sec,
Partial Discharge < 5 pC) 1050
V peak
Transient Overvoltage VIOTM t = 60 sec 4000 V peak
Pollution Degree (DIN VDE 0110, Table 1) 2
Insulation Resistance at TS, VIO =500V RS>109
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values1
Parameter Symbol Test Condition Min Typ Max Unit
WB
SOIC-16 NB
SOIC-16
Case Temperature TS— — 150 150 °C
Safety input, output, or
supply current IS
JA = 100 °C/W (WB SOIC-16),
105 °C/W (NB SOIC-16),
VI=5.5V, T
J=150°C, T
A=25°C — — 220 210 mA
Device Power Dissipa-
tion2PD— — 275 275 mW
Notes:
1. Maximum value allowed in the event of a failure; al so see the thermal derating curve in Figures 3 and 4.
2. The Si843x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 1 5 pF, input a 150 Mbps 50% duty cycle square
wave.
Si8430/31/35
16 Rev. 1.7
Not Recommended
for New Designs
Figure 3. (WB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Figure 4. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Table 11. Thermal Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
WB
SOIC-16 NB
SOIC-16
IC Junction-to-Air Thermal
Resistance JA — 100 105 — ºC/W
020015010050
500
400
200
100
0
Temp erature (ºC )
Safety-Lim iti ng Current (mA )
450
300
370
220
VDD1, VDD2 = 2.70 V
VDD1, VDD2 = 3.6 V
VDD1, VDD2 = 5.5 V
020015010050
500
400
200
100
0
Temp erature (ºC )
Safety-Lim iti ng Current (mA )
430
300
360
210
VDD1, VDD2 = 2.70 V
VDD1, VDD2 = 3.6 V
VDD1, VDD2 = 5.5 V
Si8430/31/35
Rev. 1.7 17
Not Recommended
for New Designs
2. Functional Description
2.1. Theory of Operation
The operation of an Si843x channel is analogous to that of an opto coupler, except an RF carrier is modulated
instead of light. This simple architecture provides a robust isolated data path and requires no special
considerations or initialization at start-up. A simplified block diagram for a single Si843x channel is shown in
Figure 5.
Figure 5. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier.
Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The
Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the
result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it
provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See
Figure 6 for more details.
Figure 6. Modulation Scheme
RF
OSCILLATOR
MODULATOR DEMODULATOR
A B
Semiconductor-
Based Isolation
Barrier
Transmitter Receiver
Input Signal
Output Signal
Modulation Signal
Si8430/31/35
18 Rev. 1.7
Not Recommended
for New Designs
2.2. Eye Diagram
Figure 7 illustrates an eye-diagram taken on an Si8430. For the data source, the test used an Anritsu (MP1763C)
Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8430 were
captured on an oscilloscope. The results illustrate that data integrity was maintained even at the high data rate of
150 Mbps. The results also show that 2 ns pulse width distortion an d 250 ps peak jitter were exhibited.
Figure 7. Eye Diagram
Si8430/31/35
Rev. 1.7 19
Not Recommended
for New Designs
2.3. Device Operation
Device behavior during start-up, normal operation, and shutdown is shown in Table 12. Table 13 provides an
overview of the output states when the Enable pins are active.
Table 12. Si84xx Logic Operation Table
VI
Input1,2 EN
Input1,2,3,4 VDDI
State1,5,6 VDDO
State1,5,6 VO Output1,2 Comments
HH or NC P P H Enabled, normal operation.
LH or NC P P L
X7L P P Hi-Z or L8Disabled.
X7H or NC UP P L Upon transition of VDDI from unpowered to pow-
ered, VO returns to the same state as VI in less
than 1 µs.
X7L UP P Hi-Z or L8Disabled.
X7X7P UP Undetermined
Upon transition of VDDO from unpowered to
powered, VO returns to the same state as VI
within 1 µs, if EN is in either the H or NC state.
Upon transition of VDDO from unpowered to
powered, VO returns to Hi-Z with 1 µs if EN is L.
Notes:
1. VDDI and VDDO are the input and output power supplies. VI and VO are the respective input and ou tput terminals.
EN is the enable control input located on the same output side.
2. X = not applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance.
3. It is recommended that the enable inputs be connected to an external logic high or low level when the Si84xx is
operating in noisy environments.
4. No Connect (NC) replaces EN1 on Si8430/35. No Connect replaces EN2 on the Si8435.
No Connects are not internally connected and can be left floating, tied to VDD, or tied to GND.
5. "Powered" state (P) is defined as 2.70 V < VDD < 5.5 V.
6. "Unpowered" state (UP) is defined as VDD = 0 V.
7. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current.
8. When using th e enable pin (EN) function, the output pin state is driven to a logic low state when the EN pin is disabled
(EN = 0) in Revisi on C. Revision D outputs go into a high-impedance state when the EN pin is disabled (EN = 0). See
"3. Errata and Design Migration Guidelines" on page 24 for more details.
Si8430/31/35
20 Rev. 1.7
Not Recommended
for New Designs
Table 13. Enable Input Truth Table1
P/N EN11,2 EN21,2 Operation
Si8430 — H Outputs B1, B2, B3 are enabled and follow input state.
— L Outputs B1, B2, B3 are disabled and Logic Low or in high impedance state.3
Si8431 H X Output A3 enabled and follows input state.
L X Output A3 disabled and Logic Low or in high impedance state.3
X H Outputs B1, B2 are enabled and follow input state.
X L Outputs B1, B2 are disabled and Logic Low or in high impedance state.3
Si8435 — — Outputs B1, B2, B3 are enabled and follow input state.
Notes:
1. Enable inputs EN1 and EN2 can be used for multiplexing, for clock sync, or other output control. These inputs are
internally pulled-up to local VDD by a 3 µA current source allowing them to be connected to an external logic level (high
or low) or left floating. To minimize noise coupling, do not connect circuit traces to EN1 or EN2 if they are left floating. If
EN1, EN2 are unused, it is recommended they be connected to an external logi c level, espe cially if the Si84xx is
operating in a noisy environment.
2. X = not applicable; H = Logic High; L = Logic Low.
3. When using th e enable pin (EN) function, the output pin state is driven to a logic low state when the EN pin is disabled
(EN = 0) in Revisi on C. Revision D outputs go into a high-impedance state when the EN pin is disabled (EN = 0). See
"3. Errata and Design Migration Guidelines" on page 24 for more details.
Si8430/31/35
Rev. 1.7 21
Not Recommended
for New Designs
2.4. Layout Recommendations
To ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 VAC) must be physically
separated from the safety extra-low voltage circuits (SELV is a circuit with <30 VAC) by a certain distance
(creepage/clear ance). I f a c omponent, such as a digital isolator, straddles this isolation barrier, it must meet those
creepage/clearance requirements and also provide a sufficiently large high-voltage breakdown protection rating
(commonly referred to as working voltage protection). Table 6 on page 14 and Table 7 on page 14 detail the
working voltage and creepage/clearance capabilities of the Si84xx. These tables also detail the component
standards (UL1577, IEC60747, CSA 5A), which are readily accepted by certification bodies to provide proof for
end-system specifications requirements. Refer to the end-system specification (61010-1, 60950-1, etc.)
requireme nts before s tarting any de sig n tha t us es a dig ital isolat or.
The following sections detail the recommended bypass and decoupling components necessary to ensure robust
overall performance and reliability for systems using the Si84xx digital isolators.
2.4.1. Supply Bypass
Digital integrated circuit components typically require 0.1 µF (100 nF) bypass capacitors when used in electrically
quiet environments. However, digital isolators are commonly used in hazardous environments with excessively
noisy power supplies. To counteract these harsh conditions, it is recommended that an additional 1 µF bypass
capacitor be added between VDD and GND on both sides of the package. The capacitors should be placed as
close as possible to the package to minimize stray inductance. If the system is excessively noisy, it is
recommended that the designer add 50 to 100 resistors in series wit h the VDD supply voltage source and 50 to
300 resistors in series with the digital inputs/outputs (see Figure 8). For more details, see "3. Errata and Design
Migration Guidelines" on page 24.
All components upstream or downstream of the isolator should be properly decoup led as well. If these component s
are not properly decoupled, their supply noise can couple to the isolator inputs and outputs, potentially causing
damage if spikes exceed the maximum ratings of the isolator (6 V). In this case, the 50 to 300 resistors protect
the isolator's inputs/outputs (note that permanent device damage may occur if the absolute maximum ratings are
exceeded). Functional operation should be restricted to the conditions specified in Table 1, “Recommended
Operating Conditions,” on page 3.
2.4.2. Pin Connections
No connect pins are not internally connected. They can be left floating, tied to VDD, or tied to GND.
2.4.3. Output Pin Termination
The nominal output impedance of an isolator driver channel is approximately 85 , ±40%, which is a combination
of the value of the on -chip series termination resistor and cha nnel resist ance of the output driver FET. When driving
loads where transmission line effect s will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces. The series termination resistor values should be scaled appropriately while keeping in
mind the recommendations descr ibed in “2.4.1. Supply Bypass” ab ove.
Figure 8. Recommended Bypass Components for the Si84xx Digital Isolator Family
VDD1 VDD2
GND1 GND2
50 – 300 50 – 300
Input/OutputInput/Output
C2 C3
1 F1 F
R1 (50 – 100 )
V Source 1
A1 B1
50 – 300
50 – 300
Ax Bx
C1
R2 (50 – 100 )
V Source 2
C4
0.1 F0.1 F
Si8430/31/35
Rev. 1.7 22
Not Recommended
for New Designs
2.5. Typical Performance Characteristics
The typical performance ch ar acteristics depicted in the following diagrams are for info rma tion p urpose s only. Refer
to Tables 3, 4, and 5 for actual specification limits.
Figure 9. Si8430/35 Typical VDD1 Supply
Current vs. Data Rate 5, 3.3, and 2.70 V
Operation
Figure 10. Si8431 Typical VDD1 Supply Current
vs. Data Rate 5, 3.3,
and 2.70 V Operation
Figure 11. Propagation Delay
vs. Temperature
Figure 12. Si8430/35 Typical VDD2 Supply
Current vs. Data Rate 5, 3.3, and 2.70 V
Operation (15 pF Load)
Figure 13. Si8431 Typical VDD2 Supply Current
vs. Data Rate 5, 3.3,
and 2.70 V Operation (15 pF Load)
0
5
10
15
20
25
30
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Data Rate (Mb p s)
Cur r en t (mA)
5V
3.3V
2.70V
0
5
10
15
20
25
30
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Data Rate (M b p s)
Cur r en t (mA)
5V
3.3V
2.70V
0
5
10
15
20
25
30
0 102030405060708090100110120130140150
Data Rate (Mb p s)
Cur r en t (mA)
5V
3.3V
2.70V
0
5
10
15
20
25
30
0 102030405060708090100110120130140150
Data Rate (Mb p s)
Cur r en t (mA)
5V
3.3V
2.70V
Si8430/31/35
Rev. 1.7 23
Not Recommended
for New Designs
Figure 14. Si84xx Time-Dependent Dielectric Breakdown
Si8430/31/35
24 Rev. 1.7
Not Recommended
for New Designs
3. Errata and Design Migration Guidelines
The following errata apply to Revision C devices only. See "5. Ordering Guide" on page 26 for more details. No
errata exist for Revision D devices.
3.1. Enable Pin Causes Outputs to Go Low (Revision C On ly)
When using the enabl e pin (EN1, EN2) function on the 3-channel ( Si8430/1) isolators, the correspon ding output pin
states (pin = An, Bn, where n can be 1…3) are driven to a logic low (to ground) when the enable pin is disabled
(EN1 or EN2 = 0). This functionality is different from the legacy 3-channel (Si8430/1) isolators. On those devices,
the isolator outputs go into a high-impedance state (Hi-Z) when the enable pin is disabled (EN1 = 0 or EN2 = 0).
3.1.1. Resolution
The enable pin functionality causing the outputs to go low is supported in production for Revision C of the Si84xx
devices. Revision D corrects the enable pin functionality (i.e., the outputs will go into the high-impedance state to
match the legacy iso lator pr oducts). Refer to the Ordering Guide s ections o f the data shee t(s) for cu rrent o rdering
information.
3.2. Power Supply Bypass Capacitors (Revision C and Revision D)
When using the Si84xx isolators with power supplies > 4.5 V, sufficient VDD bypass cap acitors must be present o n
both the VDD1 and VDD2 pins to ensure the VDD rise time is less than 0.5 V/µs (which is > 9 µs for a > 4.5 V
supply). Although rise time is power supply dependent, > 1 µF capacitors are required on both power supply pins
(VDD1, VDD2) of the isolator device.
3.2.1. Resolution
For recommendations on resolving this issue, see "2.4.1. Supply Bypass" on page 21. Additionally, refer to "5.
Ordering Guide" on page 26 for current or dering information.
3.3. Latch Up Immunity (Revision C Only)
Latch up immunity generally exceeds ± 200 mA per pin. Exceptions: Certain pins provide < 100 mA of latch-up
immunity. To increase latch-up immunity on these pins, 100 of equivalent resistance must be included in series
with all of the pins listed in Table 14. The 100 equivalent resistance can be comprised of the source driver's
output resistance and a series termination resistor. The Si8431 is not affected when using power supply voltages
(VDD1 and VDD2) < 3.5 V.
3.3.1. Resolution
This issue has been corrected with Revision D of the device. Refer to “5. Ordering Guide” for current ordering
information.
Table 14. Affected Ordering Part Numbers (Revision C Only)
Affected Ordering Part Numbers* Device
Revision Pin# Name Pin Type
SI8430SV-C-IS/IS1, SI8431SV-C-IS/IS1 C
5 A3 Input or Output
10 EN2 Input
14 B1 Output
SI8435SV-C-IS/IS1 C 5 A3 Input
14 B1 Output
*Note: "SV" = Speed Grade/Isolation Rating (AA, AB, BA, BB).
Si8430/31/35
Rev. 1.7 25
Not Recommended
for New Designs
4. Pin Descriptions
Name SOIC-16 Pin# Type Description1
VDD1 1 Supply Side 1 power supply.
GND1 2 Ground Side 1 ground.
A1 3 Digital Input Side 1 digital input.
A2 4 Digital Input Side 1 digital input.
A3 5 Digital I/O Side 1 digital input or output.
NC 6 NA No Connect.
EN1/NC27 Digital Input Side 1 active high enable. NC on Si8430/35
GND1 8 Ground Side 1 ground.
GND2 9 Ground Side 2 ground.
EN2/NC210 Digital Input Side 2 active high enable. NC on Si8435.
NC 11 NA No Connect.
B3 12 Digital I/O Side 2 digital input or output.
B2 13 Digital Output Side 2 digital output.
B1 14 Digital Output Side 2 digital output.
GND2 15 Ground Side 2 ground.
VDD2 16 Supply Side 2 power supply.
Notes:
1. For narrow-body devices, Pin 2 and Pin 8 GND must be externally connected to respective ground. Pin 9 and Pin 15
must also be connected to external ground.
2. No Connect. These pins are not internally connected. They can be le ft floating, tied to VDD or tied to GND.
VDD1
GND1
A1
A3
NC
NC
GND1
A2
VDD2
GND2
B2
B1
NC
B3
GND2
EN2/NC
I
s
o
l
a
t
i
o
n
RF
XMITR RF
RCVR
RF
XMITR RF
RCVR
RF
XMITR RF
RCVR
Si8430/35
VDD1
GND1
A1
A3
NC
EN1
GND1
A2
VDD2
GND2
B2
B1
NC
B3
GND2
EN2
I
s
o
l
a
t
i
o
n
RF
XMITR RF
RCVR
RF
XMITR RF
RCVR
RF
XMITR
RF
RCVR
Si8431
Si8430/31/35
26 Rev. 1.7
Not Recommended
for New Designs
5. Ordering Guide
These devices are not recommended for new designs. Please see the Si863x data sheet for replacement options.
Table 15. Ordering Guide for Valid OPNs1
Ordering Part
Number
(OPN)
Alternative Part
Number (APN) Number of
Input s VDD1
Side
Number of
Inputs VDD2
Side
Maximum
Data Rate
(Mbps)
Isolation
Rating Package Type
Revision D Devices2
Si8430AB-D-IS Si8630AB-B-IS 3 0 1
2.5 kVrms WB SOIC-161,3
Si8430BB-D-IS Si8630BB-B-IS 3 0 150
Si8431AB-D-IS Si8631AB-B-IS 2 1 1
Si8431BB-D-IS Si8631BB-B-IS 2 1 150
Si8435BB-D-IS Si8635BB-B-IS 3 0 150
Si8430AB-D-IS1 Si8630AB-B-IS1 3 0 1
2.5 kVrms NB SOIC-161
Si8430BB-D-IS1 Si8630BB-B-IS1 3 0 150
Si8431AB-D-IS1 Si8631AB-B-IS1 2 1 1
Si8431BB-D-IS1 Si8631BB-B-IS1 2 1 150
Si8435BB-D-IS1 Si8635BC-B-IS1 3 0 150
Notes:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 ° C according to the JEDEC industry standard
classifications and peak solder temperatures.
2. Revision C and Revision D devices are supported for existing designs.
3. AEC-Q100 qualified.
Si8430/31/35
Rev. 1.7 27
Not Recommended
for New Designs
Revision C Devices2
Si8430AB-C-IS Si8630AB-B-IS 3 0 1
2.5 kVrms WB SOIC-161
Si8430BB-C-IS Si8630BB-B-IS 3 0 150
Si8431AB-C-IS Si8631AB-B-IS 2 1 1
Si8431BB-C-IS Si8631BB-B-IS 2 1 150
Si8435BB-C-IS Si8635BB-B-IS 3 0 150
Si8430AB-C-IS1 Si8630AB-B-IS1 3 0 1
2.5 kVrms NB SOIC-161
Si8430BB-C-IS1 Si8630BB-B-IS1 3 0 150
Si8431AB-C-IS1 Si8631AB-B-IS1 2 1 1
Si8431BB-C-IS1 Si8631BB-B-IS1 2 1 150
Si8435BB-C-IS1 Si8635BC-B-IS1 3 0 150
Table 15. Ordering Guide for Valid OPNs1 (Continued)
Ordering Part
Number
(OPN)
Alternative Part
Number (APN) Number of
Input s VDD1
Side
Number of
Inputs VDD2
Side
Maximum
Data Rate
(Mbps)
Isolation
Rating Package Type
Notes:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 ° C according to the JEDEC industry standard
classifications and peak solder temperatures.
2. Revision C and Revision D devices are supported for existing designs.
3. AEC-Q100 qualified.
Si8430/31/35
28 Rev. 1.7
Not Recommended
for New Designs
6. Package Outline: 16-Pin Wide Body SOIC
Figure 15 illustrates the package details for the Triple-Channel Digital Isolator. Table 16 lists the values for the
dimensions shown in the illustration.
Figure 15. 16-Pin Wide Body SOIC
Table 16. Package Diagram Dimensions
Symbol
Millimeters
Min Max
A — 2.65
A1 0.1 0.3
D 10.3 BSC
E 10.3 BSC
E1 7.5 BSC
b 0.31 0.51
c 0.20 0.33
e 1.27 BSC
h 0.25 0.75
L 0.4 1.27
0° 7°
Si8430/31/35
Rev. 1.7 29
Not Recommended
for New Designs
7. Land Pattern: 16-Pin Wide-Body SOIC
Figure 16 illustrates the recommended land pattern details for the Si843x in a 16-pin wide-body SOIC. Table 17
lists the values for the dimensions shown in the illustration.
Figure 16. 16-Pin SOIC Land Pattern
Table 17. 16-Pin Wide Body SOIC Land Pattern Dimensions
Dimension Feature (mm)
C1 Pad Column Spacing 9.40
E Pad Row Pitch 1.27
X1 Pad Width 0.60
Y1 Pad Length 1.90
Notes:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P1032X265-16AN
for Density Level B (Median Land Protrusion).
2. All feature sizes shown are at Maximum Material Condition (MMC) and a card
fabrication tolerance of 0.05 mm is assumed.
Si8430/31/35
30 Rev. 1.7
Not Recommended
for New Designs
8. Package Outline: 16-Pin Narrow Body SOIC
Figure 17 illustrates the package details for the Si84xx in a 16-pin narrow-body SOIC (SO-16). Table 18 lists the
values for the dimensions shown in the illustration.
Figure 17. 16-pin Small Outline Integrated Circuit (SOIC) Package
Table 18. Package Diagram Dimensions
Dimension Min Max
A — 1.75
A1 0.10 0.25
A2 1.25 —
b0.310.51
c0.170.25
D 9.90 BSC
E 6.00 BSC
E1 3.90 BSC
e 1.27 BSC
L0.401.27
L2 0.25 BSC
Si8430/31/35
Rev. 1.7 31
Not Recommended
for New Designs
h0.250.50
θ0° 8°
aaa 0.10
bbb 0.20
ccc 0.10
ddd 0.25
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to the JEDEC Solid S tate Outline MS-012, Variation AC.
4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification
for Small Body Components.
Table 18. Package Diagram Dimensions (Continued)
Dimension Min Max
Si8430/31/35
32 Rev. 1.7
Not Recommended
for New Designs
9. Land Pattern: 16-Pin Narrow Body SOIC
Figure 18 illustrates the recommended land pattern details for the Si843x in a 16-pin narrow-body SOIC. Table 19
lists the values for the dimensions shown in the illustration.
Figure 18. 16-Pin Narrow Body SOIC PCB Land Pattern
Table 19. 16-Pin Narrow Body SOIC Land Pattern Dimensions
Dimension Feature (mm)
C1 Pad Column Spacing 5.40
E Pad Row Pitch 1.27
X1 Pad Width 0.60
Y1 Pad Length 1.55
Notes:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P600X165-16N
for Density Level B (Median Land Protrusion).
2. All feature sizes shown are at Maximum Material Condition (MMC) and a card
fabrication tolerance of 0.05 mm is assumed.
Si8430/31/35
Rev. 1.7 33
Not Recommended
for New Designs
10. Top Marking: 16-Pin Wide Body SOIC
10.1. 16-Pin Wide Body SOIC Top Marking
10.2. Top Marking Explanation
Line 1 Marking:
Base Part Number
Ordering Options
(See Ordering Gui de fo r more
information).
Si84 = Isolator product series
XY = Channel Configuration
X = # of data channels (3, 2, 1)
Y = # of reverse channels (1, 0)*
S = Speed Grade
A = 1 Mbps; B = 150 Mbps
V = Insulation rating
A=1kV; B=2.5kV
Line 2 Marking: YY = Year
WW = Workweek Assigned by Assembly House
TTTTTT = Mfg Code Manufacturing Code from Assembly House
Line 3 Marking:
Circle = 1.5 mm Diameter
(Center-Justified) “e3” Pb-Free Symbol
Country of Origin ISO Code
Abbreviation TW = Taiwan
*Note: Si8435 has 0 reverse channels.
Si84XYSV
YYWWTTTTTT
TW
e3
Si8430/31/35
34 Rev. 1.7
Not Recommended
for New Designs
11. Top Marking: 16-Pin Narrow Body SOIC
11.1. 16-Pin Narrow Body SOIC Top Marking
11.2. Top Marking Explanation
Line 1 Marking: Base Part Number
Ordering Options
(See Ordering Guide for more
information).
Si84 = Isolator product series
XY = Channel Configuration
X = # of data channels (3, 2, 1)
Y = # of reverse channels (1, 0)*
S = Speed Grade
A = 1 Mbps; B = 150 M bps
V = Insulation rating
A=1kV; B=2.5kV
Line 2 Marking: Circle = 1.2 mm Diameter “e3” Pb-Free Symbol
YY = Year
WW = Work Week Assigned by the Asse mbly Hous e. Corresponds to the
year and work week of the mold date.
TTTTTT = Mfg code Manufacturing Code from Assembly Purchase Order
form.
Circle = 1.2 mm diameter “e3” Pb-Free Symbol.
*Note: Si8435 has 0 reverse channels.
Si84XYSV
YYWWTTTTTT
e3
Si8430/31/35
35 Rev. 1.7
Not Recommended
for New Designs
DOCUMENT CHANGE LIST
Revision 0.32 to Revision 0.33
Rev 0.33 is the first revision of this document that
applies to the new seri es of ultra lo w power isolators
featuring pinout and functional compatibility with
previous isolator products.
Updated “1. E lect ric al Specifications”.
Updated “5. O r de rin g Guide”.
Added “10. Top Marking: 16-Pin Wide Body SOIC”.
Revision 0.33 to Revision 0.34
Updated all specs to reflect latest silicon.
Revision 0.34 to Revision 0.35
Updated all specs to reflect latest silicon.
Added "3. Errata and Design Migration Guidelines"
on page 24.
Added "11. Top Marking: 16-Pin Nar row Body SOIC"
on page 34.
Revision 0.35 to Revision 1.0
Updated document to reflect availability of Revision
D silicon.
Updated Tables 3,4, and 5.
Updated all supply currents and channel-channel skew.
Updated Table 2.
Updated absolute maximum supply voltage.
Updated Table 7.
Updated clearance and creepage dimensions.
Updated Table 12.
Updated Note 7.
Updated Table 13.
Updated Note 3.
Updated "3. Errat a and Design Migration Guidelin es"
on page 24.
Updated "5. Ordering Guide" on page 26.
Revision 1.0 to Revision 1.1
Updated Tables 3, 4, and 5.
Updated notes in tables to reflect output impedance of
85 .
Updated rise and fall time specifications.
Updated CMTI value.
Revision 1.1 to Revision 1.2
Updated document throughout to include MSL
improvements to MSL2A.
Updated "5. Ordering Guide" on page 26.
Updated Note 1 in ordering guide table to reflect
improvement and compliance to MSL2A moisture
sensitivity level.
Revision 1.2 to Revision 1.3
Updated " Features" on page 1.
Moved Tables 1 and 2 to page 3.
Updated Tables 6, 7, 8, and 9.
Updated Table 12 footnotes.
Added Figure 14, “Si84xx Time-Dependent
Dielectric Breakdown,” on page 23.
Revision 1.3 to Revision 1.4
Updated "2.4.1. Supply Bypass" on page 21.
Added Figure 8, “Recommended Bypass
Components for the Si84xx Digital Isolator Family,”
on page 21.
Updated "3.2. Power Supply Bypass Ca pacitors
(Revision C and Revision D)" on page 24.
Revision 1.4 to Revision 1.5
Updated "5. Ordering Guide" on page 26 to include
MSL2A.
Revision 1.5 to Revision 1.6
Updated "5. Ordering Guide" on page 26 to include
new title note and “ Alternative Part Number (APN)”
column.
Revision 1.6 to Revision 1.7
Deleted references to MSL ratings throughout
document to eliminate redundancy and maintain
compliance with corporate data sheet format
requirements. The MSL ratings are specified in the
Qualification Report for the product.
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