320 . yr 5 Siliconix DG201A, 202 SPSTCMOS 7+ O%-+A4 v7 F (FID 7B) (O3R) CAB TIF 47s O-NA TAN MBSR (V+ =15V, V-=15V, GND=0, T,=25C) (f, OU aa MORE &) (1) DG201A : 0.8V,DG202 : 2.4V . ay (#2) DG201A : 2.4V,DG202 : 0.8V - { DG201AA/DG202A | DG201AB,C/DG202B,C 7 7 io al us ia fe foe Vea 8 Oe mF LEILEICENCEALE oa s : ~ = Hier amr LP |, -Vanavos |oVri a |= 15 | =15 6 | it be] = a ns i : Vp=+10V, Js=tmA | T2=25C | | 118 | 178 15 | 200 | m SELECT Cp-0016,F | {> D <_|s| _ Tes:o~ Vin=0.8/2.4V (EL) ORE 250 250 | ones Recr te Dp Vs=14V, Vp=-14V 0.01 | 1.0 0.01 5.0 Taek oe Ioore: Vin =2.4/0.8V GE2) | Vp=14V, Vs= 14V] 1.0 | -0.02 5.0 | 0.02 nA eer om T,=25T Vp=14V, Vs=14V 0.01 | 1.0 0.01 5.0 T 5 Foor. Vs=14V, Vp=14V | 1.0 | 0.02 =8.0 |-0.02 . Vs=14V, Vp=14V 100 100 | : Isorr Vin=2.4/0.8V GE2) | Vp=M4V, Vs=14V | 100 100 aA Vin A Ore a Vp=14V, Vs=14V ' 100 ; 100 Tovore: Vs=14V, Vp=14V | 100 ! 100 Viv=0.8/24V GEL) | Vp=Ve=14V O41 | 10 o1 | 50 | ee T,=25C Vo=Vs=-14v | -10]-015] | 5.0 --0.15 Fowon. Viy=0.8/2.4V (TEL) Vp=Vs=14V 200 / 200 | 4 By (ELS ER Vp=Vs=14V | 200 200 I Viy=2.4V _ | 1.0 |oono 1.0 '0,0004 L. Wig 15V _ T,=25C 0.003} 1.0 | 9.003! 10 | wA FL Nene onl Tn Vig OV = 1.0 |-oom | = 1.0 0004 | ~ 2.4V 10 | -10 i fer | ter tested A Lig Viynlv aa wire aon i 10 Co 10 uA . . Ws In Viw=0V 10 [eto |. 0 LA. Re LaLa ' : 30 : oo t fon i, 4 S eae Lc tennaic & 3 | as 7 JOO ROK OOK ee : off _ : : _ FREQUENEY - He : tt & mG WR fs Q Ci=1000pF, Reev=0, Vegn=0V 20 pc iliconix | DG201A | DG202 | Csopn | _ : 5 5 pvovrsoanationaneacrneoimen eet | DE creak eo ~ Var OV, Vin=8V, f= 140KH2 : = oF F200 oa _ AD ADG201A _ Corr | _ m6 Ie (BREAK EREQUENEY! = = T Harris HI201 : Cos.ox , Vo= Vs=0V, Vin=0V, f= 140KHz . 16 i 6 _ sun aan erceueey = __ Intersil | DG201 OIR \Viw=5V.Z,=750 70 / 70 aR wa ATTENUATION Ripa) + -40 68 MP | MP201DI _C.Ten | Vs=2V,f=100kKH2 90 90 / + 0.9 2 0.9 2 PMI | SW201A Png LON oF OFF c sa mA gue | NJU201A eae -10- | 0.