ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general-purpose amplifier and low-speed switching applications. MJE800 * High DC Current Gain -- * * MJE802 hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication Choice of Packages -- MJE700 and MJE800 series MJE803 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIII IIIII IIIIIII III IIII IIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Symbol MJE700 MJE800 MJE702 MJE703 MJE802 MJE803 VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Rating Collector-Emitter Voltage Unit CASE 77 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 40 0.32 Watts W/C TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case CASE 77 TO-220 RJC Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 7 Max 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE MJE700-703 MJE800-803 Unit C/W 3.13 2.50 1 Publication Order Number: MJE700/D MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 PD, POWER DISSIPATION (WATTS) 50 40 TO-220AB 30 TO-126 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Power Derating IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (1) MJE700, MJE800 (IC = 50 mAdc, IB = 0) MJE702, MJE703, MJE802, MJE803 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) MJE700, MJE800 (VCE = 80 Vdc, IB = 0) MJE702, MJE703, MJE802, MJE803 Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) Collector Cutoff Current (VCB = Rated BVCEO, IE = 0, TC = 100C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) V(BR)CEO 60 80 -- -- Vdc -- -- 100 100 ICBO -- -- 100 500 Adc IEBO -- 2.0 mAdc 750 750 100 -- -- -- -- -- -- 2.5 2.8 3.0 -- -- -- 2.5 2.5 3.0 1.0 -- OFF CHARACTERISTICS Adc ICEO ON CHARACTERISTICS DC Current Gain (1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) Base-Emitter On Voltage (1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS hFE MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices -- VCE(sat) MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices Vdc VBE(on) MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices Small-Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 hfe Vdc -- MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 4.0 V2 APPROX +8.0 V RC TUT 51 V1 APPROX -12 V 6.0 k D1 2.0 150 For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf 10 ns DUTY CYCLE = 1.0% tf 1.0 0.8 tr 0.6 0.4 + 4.0 V 25 s 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 td @ VBE(off) = 0 PNP NPN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 3. Switching Times Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 IB1 = IB2 TJ = 25C SCOPE RB 0 VCC = 30 V IC/IB = 250 ts t, TIME (s) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA VCC -30 V 0.1 P(pk) JC(t) = r(t) JC JC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.05 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 Figure 4. Thermal Response (MJE700, 800 Series) http://onsemi.com 3 50 100 200 300 500 1000 MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0ms 1.0ms 100s IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE-OPERATING AREA 10 7.0 5.0 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE702, 703 MJE700 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 100 Figure 5. MJE700 Series 5.0ms 1.0ms 100s dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE802, 803 MJE800 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 6. MJE800 Series pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 are based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown http://onsemi.com 4 MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 PNP MJE700 Series NPN MJE800 Series 6.0 k TJ = 125C 3.0 k 25C 2.0 k -55C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 VCE = 3.0 V TJ = 125C 4.0 k hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 4.0 k 6.0 k VCE = 3.0 V 3.0 k 25C 2.0 k -55C 1.0 k 800 600 400 300 0.04 0.06 4.0 0.1 0.4 0.6 1.0 0.2 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 3.4 3.0 2.6 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain TJ = 25C IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 20 10 50 100 3.4 3.0 TJ = 25C IC = 0.5 A 1.0 A 2.6 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 IB, BASE CURRENT (mA) 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25C TJ = 25C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 2.0 0.2 0.04 0.06 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages http://onsemi.com 5 2.0 4.0 MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 Notes http://onsemi.com 7 MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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