MICROWAVE POWER GaAs FET TIM7785-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL P1dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add G1dB IDS1 ( Ta= 25C ) CONDITIONS VDS= 10V f= 7.7 to 8.5GHz G IM3 IDS2 Tch Two-Tone Test Po=28.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) UNIT dBm MIN. 38.5 TYP. MAX. 39.5 dB 5.0 6.0 A 2.2 2.6 dB % dBc -42 30 -45 0.6 A C 2.2 2.6 80 MAX. Recommended Gate Resistance(Rg): 150 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100A Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25C ) gm VGSoff UNIT mS MIN. TYP. 1800 V -1.0 -2.5 -4.0 A 5.2 V -5 C/W 2.5 3.8 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM7785-8SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 7.0 Total Power Dissipation (Tc= 25 C) PT W 39.5 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-8SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS2.2A Pout(dBm) Pin=33.5dBm 40 39 38 37 7.7 7.9 8.1 8.3 8.5 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 42 freq.=8.5GHz 41 VDS=10V IDS2.2A 40 80 39 70 38 60 37 50 36 40 add 35 30 34 20 33 10 27 29 31 33 Pin(dBm) 3 35 37 add(%) Pout(dBm) Pout TIM7785-8SL Power Dissipation vs. Case Temperature 40 PT(W) 30 20 10 0 40 80 120 160 200 Tc (C) IM3 vs. Output Power Characteristics -10 VDS=10V IDS2.2A -20 freq.=8.5GHz f=5MHz IM3 (dBc) -30 -40 -50 -60 24 26 28 30 Pout (dBm) @Single carrier level 4 32 34 MICROWAVE POWER GaAs FET TIM7785-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL ( Ta= 25C ) CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 38.5 39.5 dB 7.5 8.5 A 2.2 2.6 Compression Point Power Gain at 1dB Gain VDS= 10V G1dB IDSset=1.8A Compression Point f = 7.7 to 8.5GHz Drain Current IDS1 Gain Flatness G dB 0.6 Power Added Efficiency add % 35 3rd Order Intermodulation IM3 dBc -44 -47 Distortion Drain Current Channel Temperature Rise Two-Tone Test Po= 28.5dBm IDS2 (Single Carrier Level) A 2.2 2.6 Tch (VDS X IDS + Pin - P1dB) C 80 UNIT mS MIN. V -1.0 -2.5 -4.0 A 5.2 V -5 C/W 2.5 3.5 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100A Rth(c-c) Channel to Case TYP. MAX. 1800 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2009 TIM7785-8UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 7.0 Total Power Dissipation (Tc= 25 C) PT W 42.9 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-8UL RF PERFORMANCE Output Power vs. Frequency 42 VDS= 10V IDS 2.2A Pin= 31.0dBm 40 39 38 37 7.4 7.6 7.8 8 8.2 8.4 8.6 8.8 Frequency (GHz) Output Power vs. Input Power 42 90 f= 8.1GHz VDS= 10V IDS 2.2A 41 80 Po 40 70 39 60 38 50 37 40 add 36 30 35 20 34 10 33 0 24 26 28 30 Pin (dBm) 3 32 34 add (%) Po (dBm) Po (dBm) 41 TIM7785-8UL Power Dissipation vs. Case Temperature 50 40 PT (W) 30 20 10 0 0 40 80 120 160 200 Tc () IM3 vs. Output Power Characteristics -20 VDS= 10V IDS 2.2A f= 8.1GHz f= 5MHz IM 3 (dBc) -30 -40 -50 -60 24 26 28 30 32 Po(dBm), Single Carrier Level 4 34