MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-8SL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DIST ORTION HIGH GAIN
IM3=-45 dBc at Pout= 28.5dBm G1dB=6.0dB at 7.7GHz to 8.5GHz
Single Carrier Level BROAD BAND INTERN ALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=39.5dBm at 7.7GHz to 8.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 38.5 39.5 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 5.0 6.0 ⎯
Drain Current IDS1 A ⎯ 2.2 2.6
Gain Flatness ΔG dB ⎯ ⎯ ±0.6
Power Added Efficiency ηadd
VDS= 10V
f= 7.7 to 8.5GHz
% ⎯ 30 ⎯
3
rd Order Intermodulation
Distortion IM3 dBc -42 -45
⎯
Drain Current IDS2
Two-Tone Test
Po=28.5dBm
(Single Carrier Level) A ⎯ 2.2 2.6
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 80
Recommended Gate Resistance(Rg): 150 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm V
DS= 3V
I
DS= 3.0A mS ⎯ 1800 ⎯
Pinch-off Voltage VGSoff V
DS= 3V
I
DS= 30mA V -1.0 -2.5 -4.0
Saturated Drain Current IDSS V
DS= 3V
V
GS= 0V A ⎯ 5.2 ⎯
Gate-Source Breakdown
Voltage VGSO I
GS= -100μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 2.5 3.8
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
TIM7785-8SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 7.0
Total Power Dissipation (Tc= 25 °C) PT W 39.5
Channel Temperature Tch °C 175
Storage Temperature Tstg °C -65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM7785-8SL
3
VDS=10V
IDS≅2.2A
Pin=33.5dBm
Frequency (GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=8.5GHz
VDS=10V
IDS≅2.2A
Pout
ηadd
Pin(dBm)
40
39
38
37
RF PERFORMANCE
7.7 7.9 8.1 8.3 8.5
Pout(dBm)
Output Power (Pout) vs. Frequency
42
41
40
39
38
37
36
35
34
33
Pout(dBm)
80
70
60
50
40
30
20
10
ηadd(%)
27 29 31 33 35 37
TIM7785-8SL
Power Dissipation vs. Case Temperature
30
20
10 0 40 80 120 160 200
Tc (°C)
40
4
IM3 vs. Output Power Characteristics
VDS=10V
IDS≅2.2A
freq.=8.5GHz
Δf=5MHz
PT(W)
24
-60
-20
-30
-40
-50
-10
IM3 (dBc)
26 28 30 32 34
Pout (dBm) @Single carrier level
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TIM7785-8UL
TECHNICAL DATA
FEATURES
HIGH POWER BROAD BAND INTERNALLY MATCHED FET
P1dB=39.5dBm at 7.7GHz to 8.5GHz
HIGH GAIN HERMETICALLY SEALED PACKAGE
G1dB= 8.5dB at 7.7GHz to 8.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 38.5 39.5 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 7.5 8.5 ⎯
Drain Current IDS1 A ⎯ 2.2 2.6
Gain Flatness ΔG dB ⎯ ⎯ ±0.6
Power Added Efficiency ηadd
VDS= 10V
IDSset=1.8A
f = 7.7 to 8.5GHz
% ⎯ 35 ⎯
3rd Order Intermodulation
Distortion IM3 dBc -44 -47
⎯
Drain Current IDS2
Two-Tone Test
Po= 28.5dBm
(Single Carrier Level) A ⎯ 2.2 2.6
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 80
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
IDS= 3.0A mS ⎯ 1800 ⎯
Pinch-off Voltage VGSoff VDS= 3V
IDS= 30mA V -1.0 -2.5 -4.0
Saturated Drain Current IDSS VDS= 3V
VGS= 0V A ⎯ 5.2 ⎯
Gate-Source Breakdown
Voltage VGSO IGS= -100μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 2.5 3.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2009
TIM7785-8UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 7.0
Total Power Dissipation (Tc= 25 °C) PT W 42.9
Channel Temperature Tch °C 175
Storage Tstg °C -65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM7785-8UL
RF PERFORMANCE
37
38
39
40
41
42
7.4 7.6 7.8 8 8.2 8.4 8.6 8.8
Po (dBm)
Output Power vs. Frequency
VDS= 10V
IDS≅ 2.2A
Pin= 31.0dBm
Frequency (GHz)
ηadd
33
34
35
36
37
38
39
40
41
42
24 26 28 30 32 34
Pin (dBm)
Po (dBm)
0
10
20
30
40
50
60
70
80
90
ηadd (%)
Po
f= 8.1GHz
VDS= 10V
IDS≅ 2.2A
Output Power vs. Input Power
3
TIM7785-8UL
Power Dissipation vs. Case Temperature
4
0
10
20
30
40
50
0 40
PT (W)
80 120 160 200
Tc (℃)
-60
-50
-40
-30
-20
24 26 28 30 32 34
IM 3 (dBc)
VDS= 10V
IDS≅ 2.2A
f= 8.1GHz
Δf= 5MHz
IM3 vs. Output Power Characteristics
Po(dBm), Single Carrier Level
