High Performance InGaAs p-i-n Photodiode Sheet 1 of 1 13PD150-ST, -SMA, -FC, -SC The 13PD150-ST, an InGaAs photodiode with a 150m-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high coupling efficience to multimode fiber in moderate-to-high speed applications. Planar semiconductor design and dielectric passivation provide superior low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200C, 15 hours, Vr = 20V). The ST receptacle is suitable for bulkhead and PC board mounting. Features: * Planar Structure * Dielectric Passivation * 100% Purge Burn-in * High Responsivity DEVICE CHARACTERISTICS Parameters Test Conditions Operating Voltage Dark Current Capacitance Responsivity Rise/Fall -5V -5V 1300nm Minimum 0.7 Typical 0.5 0.7 0.8 Maximum Units -20 2.5 2.25 Volts nA pF A/W ns 0.5 ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 20 Volts 5mA 1mA -40C to +85C -40C to +85C 250C Sheet 1 of 1 829 Flynn Road, Camarillo, CA 93012 * Phone: (805) 445-4500 * Fax: (805) 445-4502 Email: customerservice@telcomdevices.com * Website: www.telcomdevices.com