13PD150-ST, -SMA, -FC, -SC
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
Sheet 1 of 1
Sheet 1 of 1
The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46
header and aligned in an AT&T ST active device mount, is intended for high coupling efficience to multi-
mode fiber in moderate-to-high speed applications. Planar semiconductor design and dielectric passivation
provide superior low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in
(200°C, 15 hours, Vr = 20V). The ST receptacle is suitable for bulkhead and PC board mounting.
High Performance InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Volts
nA
pF
A/W
ns
–20
2.5
2.25
0.5
0.5
0.7
0.80.7
–5V
–5V
1300nm
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
20 Volts
5mA
1mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS
