Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 150V
▼ Single Drive Requirement RDS(ON) 100mΩ
▼ Fast Switching Characteristic ID20A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 34.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Continuous Drain Current, VGS @ 10V 12
Pulsed Drain Current180
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V 20
Parameter Rating
Drain-Source Voltage 150
Halogen-Free Product
1
AP20N15GI-HF
200903103
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 150 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=10A - - 100 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=10A - 16 - S
IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=120V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=14A - 22 35 nC
Qgs Gate-Source Charge VDS=120V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 7.7 - nC
td(on) Turn-on Delay Time2VDS=75V - 10 - ns
trRise Time ID=14A - 33 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 27 - ns
tfFall Time RD=5.35Ω-26-ns
Ciss Input Capacitance VGS=0V - 1070 1700 pF
Coss Output Capacitance VDS=25V - 230 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 9 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=10A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=14A, VGS=0V, - 0.13 - us
Qrr Reverse Recovery Charge dI/dt=100A/µs - 0.77 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP20N15GI-HF
A
P20N15GI-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
0481216
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
9.0V
8.0V
7.0V
VG=6.0V
60
70
80
90
100
45678910
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=10A
TC=25oC
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=10A
VG=10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.0
0.6
1.2
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
10
20
30
40
50
60
0 4 8 12 16
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
9.0V
8.0V
7.0V
VG=6.0V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP20N15GI-HF
Q
VG
10V
QGS QGD
QG
Charge
0
400
800
1200
1600
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
12
0 102030
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =120V
I
D=14A
0.1
1
10
100
1000
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC 0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) trtd(off) tf
VDS
VGS
10%
90%
