Reflexlichtschranke im SMT-Gehause Reflective Interrupter in SMT Package 2.1 1.7 0.15 0.13 0.5 0.3 6 5 4 2 - 3 Emitter 4 Collector 1.27 spacing GEO06840 5 - 6 Cathode feo06422 1 2 3 1 Anode 4.2 3.8 0...0.1 6.2 5.8 3.4 3.0 SFH 9201 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Optimaler Arbeitsabstand 1 mm bis 5 mm IR-GaAs-Lumineszenzdiode: Sender Si-NPN-Fototransistor: Empfanger Tageslichtsperrfilter Hoher Kollektor-Emitter-Strom typ. 0.7 mA Geringe Sattigungsspannung Sender und Empfanger galvanisch getrennt Features Optimal operating distance 1 mm to 5 mm IR-GaAs-emitter Silicon NPN phototransistor detector Daylight filter against undesired light effects High collector-emitter current typ. 0.7 mA Low saturation voltage Emitter and detector electrically isolated Anwendungen Positionsmelder Endabschalter Drehzahluberwachung, -regelung Bewegungssensor Applications Position reporting End position switch Speed monitoring and regulating Motion transmitter Typ Type ICE IF = 10 mA, VCE = 5 V, d = 1 mm Bestellnummer Ordering Code mA SFH 9201 Q62702-P5038 0.25 ... 2.00 SFH 9201-1/2 Q62702-P5055 0.25 ... 0.80 SFH 9201-2/3 Q62702-P5056 0.40 ... 1.25 SFH 9201-3/4 Q62702-P5057 0.63 ... 2.00 Semiconductor Group 1 1998-08-25 SFH 9201 Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 50 mA Verlustleistung Power dissipation Ptot 80 mW Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage VCE 16 V Kollektor-Emitter-Sperrspannung, (t 2 min) Collector-emitter voltage, (t 2 min) VCE 30 Emitter-Kollektor-Sperrspannung Emitter-collector voltage VEC 7 Kollektorstrom Collector current IC 10 mA Verlustleistung Total power dissipation Ptot 100 mW Lagertemperatur Storage temperature range Tstg - 40 ... + 85 C Umgebungstemperatur Ambient temperature range TA - 40 ... + 85 Elektrostatische Entladung Electrostatic discharge ESD 2 Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) Semiconductor Group 2 Sender (GaAs-Diode) Emitter (GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Reflexlichtschranke Light reflection switch KV 1998-08-25 SFH 9201 Lothinweise Soldering conditions Bauform Type Drypack Level acc. to IPSstand. 020 SFH 9201 4 Tauch-, Schwalllotung Dip, wave soldering Reflowlotung Reflow soldering Peak temp. Max. time in Peak temp. (solderbath) peak zone (package temp.) n. a. 245 C - Kolbenlotung Iron soldering Max. time in (Iron temp.) peak zone 10 sec. 300 C < 5 sec. Bitte Verarbeitungshinweise fur SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Durchlaspannung Forward voltage IF = 50 mA VF 1.25 ( 1.65) V Sperrstrom Reverse current VR = 5 V IR 0.01 ( 1) A Kapazitat Capacitance VR = 0 V, f = 1 MHz CO 25 pF Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Kapazitat Capacitance VCE = 5 V, f = 1 MHz CCE 10 pF Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V ICEO 3 ( 200) nA Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, EV = 1000 Lx IP 3.5 mA Semiconductor Group 3 Sender (IR-GaAs-Diode) Emitter (IR-GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) 1998-08-25 SFH 9201 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Kollektor-Emitterstrom ICE min. Collector-emitter current ICE typ. Kodak neutral white test card, 90 % Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm 0.25 0.70 mA mA Kollektor-Emitter-Sattigungsspannung VCE sat Collector-emitter-saturation voltage Kodak neutral white test card, 90 % Reflexion IF = 10 mA; d = 1 mm; IC = 85 A 0.15 ( 0.6) V Reflexlichtschranke Light reflection switch 1) 1) Montage auf PC-Board mit >5 mm2 Padgroe Mounting on pcb with >5 mm2 pad size d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 Semiconductor Group 4 1998-08-25 SFH 9201 Schaltzeiten (TA = 25 C, VCC = 5 V, IC = 1 mA1), RL = 1 k) Switching times RL F VCC C Output OHM02258 Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Einschaltzeit Turn-on time tein ton 65 s Anstiegzeit Rise time tr 50 s Ausschaltzeit Turn-off time taus toff 55 s Abfallzeit Fall time tf 50 s 1) 1) IC eingestellt uber den Durchlastrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) I C ---------- = f (d ) I Collector current Cmax C Permissible power dissipation for diode and transistor Ptot = f (TA ) OHO02255 100 C max % OHO02260 160 Ptot Switching characteristics t = f (RL) TA = 25 oC, IF = 10 mA OHO00785 10 3 Total power dissipation t mW C = 100 A s 80 120 t on Detector t off 60 Emitter 80 10 2 t on t off 40 C = 1 mA 40 20 Kodak neutral white test card Mirror 0 0 0 1 2 3 Semiconductor Group 4 mm 5 d 0 20 40 60 80 C 100 TA 5 10 1 -1 10 10 0 k RL 10 1 1998-08-25 SFH 9201 Transistor capacitance (typ.) CCE = f (VCE), TA = 25 oC, f = 1 MHz Max. permissible forward current IF = f (TA) OHO02259 120 OHO00374 50 F mA OHO00783 3.0 C mA pF 100 2.5 C CE 40 35 80 Collector current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection 2.0 30 60 1.5 25 20 40 1.0 15 VCE = 5 V 10 20 0.5 5 0 0 0 20 40 60 80 C 100 10 -2 10 -1 10 0 TA Forward voltage (typ.) of the diode VF = f (T) VF 0 0 4 8 12 16 mA 20 F Output characteristics (typ.) IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 oC OHO00786 100 rel S rel % V 10 2 Relative spectral emission of emitter (GaAs) Irel = f () and detector (Si) Srel = f () OHO02256 1.30 10 1 V VCE 2.0 C mA OHO00781 F = 25 mA 1.25 80 1.6 F = 20 mA 10 mA 1.20 F = 20 mA 1.4 60 5 mA 1.2 1.15 F = 15 mA 1.0 Detector 40 0.8 1.10 F = 10 mA 0.6 20 1.05 0.4 F = 5 mA 0.2 Emitter 1 -40 -20 0 20 40 60 Semiconductor Group C T 100 0 700 800 900 1000 nm 1100 6 0 0.1 10 0 10 1 V VCE 1998-08-25