IRF1405ZSPBF - INFINEON TECHNOLOGIES AG

IRF1405ZPbF

IRF1405ZSPbF

IRF1405ZLPbF

HEXFET® Power MOSFET

VDSS = 55V

RDS(on) = 4.9mΩ

ID = 75A

07/14/10

www.irf.com 1

Description

This HEXFET® Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features combine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

Features

lAdvanced Process Technology

lUltra Low On-Resistance

l175°C Operating Temperature

lFast Switching

lRepetitive Avalanche Allowed up to Tjmax

lLead-Free

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

IDM Pulsed Drain Current

PD @TC = 25°C Power Dissipation W

Linear Derating Factor W/°C

VGS Gate-to-Source Voltage V

EAS (Thermally limited) Single Pulse Avalanche Energy

EAS (Tested ) Single Pulse Avalanche Energy Tested Value

IAR Avalanche Current

c

EAR Repetitive Avalanche Energy

TJ Operating Junction and

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.65

RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

RθJA Junction-to-Ambient ––– 62

RθJA Junction-to-Ambient (PCB Mount, steady state)

––– 40

420

270

See Fig.12a, 12b, 15, 16

230

1.5

± 20

Max.

150

110

600

-55 to + 175

300 (1.6mm from case )

10 lbf

in (1.1N

HEXFET® is a registered trademark of International Rectifier.

D2Pak

IRF1405ZSPbF

TO-220AB

IRF1405ZPbF

TO-262

IRF1405ZLPbF

PD - 97018A

IRF1405Z/S/LPbF

2www.irf.com

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V

∆V(BR)DSS

∆TJ Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C

RDS(on) Static Drain-to-Source On-Resistance ––– 3.7 4.9 mΩ

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V

gfs Forward Transconductance 88 ––– ––– S

IDSS Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

QgTotal Gate Charge ––– 120 180

Qgs Gate-to-Source Charge ––– 31 ––– nC

Qgd Gate-to-Drain ("Miller") Charge ––– 46 –––

td(on) Turn-On Delay Time ––– 18 –––

trRise Time ––– 110 –––

td(off) Turn-Off Delay Time ––– 48 ––– ns

tfFall Time ––– 82 –––

LDInternal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

LSInternal Source Inductance ––– 7.5 ––– from package

and center of die contact

Ciss Input Capacitance ––– 4780 –––

Coss Output Capacitance ––– 770 –––

Crss Reverse Transfer Capacitance ––– 410 ––– pF

Coss Output Capacitance ––– 2730 –––

Coss Output Capacitance ––– 600 –––

Coss eff. Effective Output Capacitance ––– 910 –––

Source-Drain Ratin

s and Characteristics

Parameter Min. Typ. Max. Units

ISContinuous Source Current ––– ––– 75

(Body Diode) A

ISM Pulsed Source Current ––– ––– 600

(Body Diode)

c

VSD Diode Forward Voltage ––– ––– 1.3 V

trr Reverse Recovery Time ––– 30 46 ns

Qrr Reverse Recovery Charge ––– 30 45 nC

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 44V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 44V

VGS = 10V

VDD = 25V

ID = 75A

RG = 4.4Ω

TJ = 25°C, IS = 75A, VGS = 0V

TJ = 25°C, IF = 75A, VDD = 25V

di/dt = 100A/µs

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 75A

VDS = VGS, ID = 250µA

VDS = 55V, VGS = 0V

VDS = 55V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VDS = 25V, ID = 75A

ID = 75A

VDS = 44V

Conditions

VGS = 10V

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

VGS = 20V

VGS = -20V

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by TJmax, starting TJ = 25°C, L = 0.10mH

RG = 25Ω, IAS = 75A, VGS =10V. Part not

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Coss eff. is a fixed capacitance that gives the same

charging time as Coss while VDS is rising from 0 to 80%

VDSS .

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

This value determined from sample failure population.

100% tested to this value in production.

This is applied to D2Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

soldering techniques refer to application note #AN-994.

IRF1405Z/S/LPbF

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Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4 6 8 10 12

VGS, Gate-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 150°C

VDS = 25V

20µs PULSE WIDTH

0 25 50 75 100 125 150 175 200

ID,Drain-to-Source Current (A)

100

125

150

175

200

Gfs, Forward Transconductance (S)

TJ = 25°C

TJ = 175°C

IRF1405Z/S/LPbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0 20 40 60 80 100 120

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VGS, Gate-to-Source Voltage (V)

VDS= 44V

VDS= 28V

ID= 75A

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

100

1000

10000

ID, Drain-to-Source Current (A)

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

Tc = 25°C

Tj = 175°C

Single Pulse

IRF1405Z/S/LPbF

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 10. Normalized On-Resistance

vs. Temperature

25 50 75 100 125 150 175

TC , Case Temperature (°C)

100

125

150

ID, Drain Current (A)

Limited By Package

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 75A

VGS = 10V

1E-006 1E-005 0.0001 0.001 0.01 0.1 110

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

IRF1405Z/S/LPbF

6www.irf.com

QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 14. Threshold Voltage vs. Temperature

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

200

300

400

500

EAS , Single Pulse Avalanche Energy (mJ)

TOP 31A

53A

BOTTOM 75A

-75 -50 -25 025 50 75 100 125 150 175 200

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS(th) Gate threshold Voltage (V)

ID = 250µA

IRF1405Z/S/LPbF

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Fig 15. Typical Avalanche Current vs.Pulsewidth

Fig 16. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

100

1000

10000

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses

0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

150

200

250

300

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 10% Duty Cycle

ID = 75A

IRF1405Z/S/LPbF

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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P. W .

Period

* V

GS = 5V for Logic Level Devices







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



VDS

90%

10%

VGS

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

IRF1405Z/S/LPbF

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TO-220AB Part Marking Information

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

INT ERNAT IONAL PART NUMBER

RECTIFIER

LOT CODE

AS S E MB L Y

LOGO

YEAR 0 = 2000

DAT E CODE

WEEK 19

LINE C

LOT CODE 1789

EXAMPLE: THIS IS AN IRF 1010

Note: "P" in assembly line pos ition

indicates "L ead - F ree"

IN THE ASSEMBLY LINE "C"

AS SE MB LED ON WW 19, 2000

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF1405Z/S/LPbF

10 www.irf.com

D2Pak (TO-263AB) Part Marking Information

DAT E CODE

YEAR 0 = 2000

WE E K 02

A = AS S E MB L Y S I T E CODE

RECTIFIER

INTERNATIONAL PART NUMBER

P = DES IGNATES LEAD - FREE

PRODUCT (OPT IONAL)

F530S

IN THE ASS EMBLY LINE "L"

AS SEMB LED ON WW 02, 2000

T HIS IS AN IRF 530S WIT H

LOT CODE 8024 INTERNATIONAL

LOGO

RECT IFIER

LOT CODE

ASSEMBLY YEAR 0 = 2000

PART NUMBE R

DAT E CODE

LINE L

WE E K 02

F530S

LOGO

ASSEMBLY

LOT CODE

D2Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

Notes:

1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1405zs.pdf

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF1405Z/S/LPbF

www.irf.com 11

TO-262 Part Marking Information

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

LOGO

RE CT IF IER

INTE RNAT IONAL

LOT CODE

AS S E MB L Y

LOGO

RECT IFIER

INT ERNATIONAL

DAT E CODE

WEEK 19

YE AR 7 = 1997

PART NUMBER

A = ASSEMBLY SITE CODE

PRODUCT (OPTIONAL)

P = DE S IGNAT E S L E AD- F R E E

EXAMPLE : T HIS IS AN IRL 3103L

LOT CODE 1789

ASSEMBLY

PART NUMBER

DAT E CODE

WEEK 19

LINE C

LOT CODE

YE AR 7 = 1997

ASS EMB LE D ON WW 19, 1997

IN THE ASSEMBLY LINE "C"

Notes:

1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1405zs.pdf

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF1405Z/S/LPbF

12 www.irf.com

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 07/2010

TO-220AB packages are not recommended for Surface Mount Application.

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00

(14.173)

MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.