DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which PACKAGE DRAWING (Unit : mm) can be directly driven from an IC operating with a 5 V single power supply. 5.2 MAX. The device featuring low on-state resistance is of the voltage drive type and 5.5 MAX. thus is ideal for driving actuators such as motors, solenoids, and relays. FEATURES RDS(on)1 = 0.8 MAX. (VGS = 4 V, ID = 0.5 A) 12.7 MAX. * Low on-state resistance 0.5 RDS(on)2 = 0.4 MAX. (VGS = 10 V, ID = 0.5 A) * Voltage drive at logic level (VGS = 4 V) is possible. * Bidirectional zener diode for protection is incorporated in 2.54 between the gate and the source. 1.27 1.77 MAX. 4.2 MAX. * Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source. 1 2 3 * Can be used complementary with the 2SJ196. ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (TC = 25C) ID(DC) 1.5 A ID(pulse) 3.0 A Drain Current (pulse) Note EQUIVALENT CIRCUIT Drain Body Diode Gate Total Power Dissipation (TA = 25C) PT 750 W Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Gate Protection Diode Source Note PW 10 ms, Duty Cycle 50% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15670EJ2V0DS00 (2nd edition) (Previous No. TC-2344) Date Published July 2001 NS CP(K) Printed in Japan The mark shows major revised points. (c) 1991, 2001 2SK1482 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1 mA 1.3 2.5 V | yfs | VDS = 10 V, ID = 0.5 A 0.4 RDS(on)1 VGS = 4.0 V, ID = 0.5 A 0.19 0.8 RDS(on)2 VGS = 10 V, ID = 0.5 A 0.15 0.4 Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 1.8 S Input Capacitance Ciss VDS = 10 V 230 pF Output Capacitance Coss VGS = 0 V 170 pF Reverse Transfer Capacitance Crss f = 1 MHz 45 pF Turn-on Delay Time td(on) VDD = 25 V, ID = 0.5 A 15 ns tr VGS = 10 V 50 ns td(off) RG = 10 420 ns 240 ns Rise Time Turn-off Delay Time Fall Time tf SWITCHING TIME D.U.T. RL RG PG. VGS VGS Wave Form 0 90% VDD 90% ID 90% ID VGS 0 ID 0 10% 10% Wave Form = 1 s Duty Cycle 1% 2 VGS 10% tr td(off) td(on) ton tf toff Data Sheet D15670EJ2V0DS 2SK1482 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA ID(pulse) 100 ID - Drain Current - A 60 40 n) S(o RD 1 (at 0.1 TA = 25C Single Pulse 0.01 0 20 40 60 80 100 120 140 TC - Case Temperature - C 1 160 DRAIN CURRENT VS. DRAIN TO SOURCE VOLTAGE 1.0 10 V 3 Pulsed 0.8 ID - Drain Current - A PT - Total Power Dissipation - W 100 10 VDS - Drain to Source Voltage - V TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.6 0.4 8V VGS = 3 V 2 1 0.2 0 0 0 30 60 90 120 150 TA - Ambient Temperature - C 0 180 10 VDS = 10 V Pulsed | yfs | - Forward Transfer Admittance - S 10 1 0.1 0.01 0.001 0 1 2 3 VGS - Gate to Source Voltage - V 0.5 1 1.5 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TRANSFER CHARACTERISTICS ID - Drain Current - A =4 DC 20 0 S VG VDSS 80 PW = 1 ms 10 ms d ite Lim V) 6V 4V dT - Derating Factor - % 10 4 VDS = 10 V Pulsed 1 0.1 0.01 0.01 0.1 1 10 ID - Drain Current - A Data Sheet D15670EJ2V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.6 ID = 0.5 A Pulsed 0.4 0.2 0 0 5 10 15 20 25 30 35 RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - 2SK1482 0.8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 0.6 0.4 0 0.1 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss Coss Crss 10 0.1 1 td(off) 100 10 0.1 10 ISD - Source to Drain Current - A VGS = 0 V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.6 0.8 1.0 1.2 1.4 VSD - Source to Drain Voltage - V 4 tr 1 ID - Drain Current - A 1.4 Pulsed 0.4 VDD = 25 V VGS = 10 V RG = 10 td(on) SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.2 10 tf VDS - Drain to Source Voltage - V 0 1 ID - Drain Current - A SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHZ 100 VGS = 10 V 1000 td(on),tr,td(off),tf - Switchig Time - ns Ciss,Coss,Crss - Capacitance - pF 1000 4V 0.2 Data Sheet D15670EJ2V0DS 10 2SK1482 [MEMO] Data Sheet D15670EJ2V0DS 5 2SK1482 [MEMO] 6 Data Sheet D15670EJ2V0DS 2SK1482 [MEMO] Data Sheet D15670EJ2V0DS 7 2SK1482 * The information in this document is current as of July, 2001. 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