© 1991, 2001
MOS FIEL D EFFECT TRANSISTO R
2SK1482
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
Docume nt No. D15670EJ2V0DS 00 (2 nd edition)
(Previous No. TC-2344)
Date Published July 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark ★ shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
2.54
123
12.7 MAX. 5.5 MAX.
5.2 MAX.
4.2 MAX.
1.77 MAX.
1.27
0.5
DESCRIPTION
The 2SK1482 is N-channel vertical type MOS FET switching device which
can be directly driven from an IC operating with a 5 V single power supply.
The device featuring low on-state resistance is of the voltage drive type and
thus is ideal for driving actuators such as motors, solenoids, and relays.
FEATURES
•Low on-state resistance
RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A)
RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A)
•Voltage drive at logic level (VGS = 4 V) is possible.
•Bidirectional zener diode for protection is incorporated in
between the gate and the source.
•Inductive loads can be driven without protective circuit thanks
to the improved breakdown voltage between the drain and source.
•Can be used complementary with the 2SJ196.
ABSOLUTE MAXIMUM RATINGS (TA = 2 5 °C)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±1.5 A
Drain Current (pulse) Note ID(pulse) ±3.0 A
Total Power Dissipation (TA = 25°C) PT750 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applie d to this devi ce.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D15670EJ2V0DS
2
2SK1482
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.3 1.8 2.5 V
Forward Transfer Admittance | yfs |V
DS = 10 V, ID = 0.5 A 0.4 S
Drain to Source On-st ate Resi stance RDS(on)1 VGS = 4.0 V, ID = 0.5 A 0.19 0.8 Ω
RDS(on)2 VGS = 10 V, ID = 0.5 A 0.15 0.4 Ω
Input Capacit ance Ciss VDS = 10 V 230 pF
Output Capacitance Coss VGS = 0 V 170 pF
Reverse Transf er Capacitance Crss f = 1 MHz 45 pF
Turn-on Delay Time td(on) VDD = 25 V, ID = 0.5 A 15 ns
Rise Time trVGS = 10 V 50 ns
Turn-off Del a y Tim e td(off) RG = 10 Ω420 ns
Fall Time tf240 ns
SWITCHING TIME
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1
s
µ
Duty Cycle ≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10% 90%
VGS
10%
0
ID
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
ID
0
t
on toff
★
Data Sheet D15670EJ2V0DS 3
2SK1482
TYPICAL CHARACTERISTICS (TA = 25°C)
20
60
80
40
0
100
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
TC - Case Temperature -
°C
0 20 40 60 80 100 120 140 160
FORWARD BIAS SAFE OPERATING AREA
100
I
D
- Drain Current - A
101V
DS
- Drain to Source Voltage - V
10
1
0.1
0.01
PW = 1 ms
V
DSS
T
A
= 25°C
Single Pulse
I
D(pulse)
10 ms
DC
R
DS(on)
Limited
(at V
GS
= 4 V)
0.4
0.6
0.2
0
0.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0 30 60 90 120 150 180
1.0
PT - Total Power Dissipation - W
TA - Ambient Temperature -
°C
10 V
6 V
4 V
V
GS
= 3 V
Pulsed
2
1
0
3
DRAIN CURRENT
VS.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
0 0.5 1 1.5
8 V
0123
1
0.1
0.01
0.001 4
10
V
GS
- Gate to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
V
DS
= 10 V
Pulsed
V
DS
= 10 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10.10.01 10
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
1
0.1
0.01
Data Sheet D15670EJ2V0DS
4
2SK1482
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - Ω
V
GS
- Gate to Source Voltage - V
0 5 10 15 20 25 30 35
0.6
0.4
0.2
I
D
= 0.5 A
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
10.1 10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
0
0.2
0.4
0.6
0.8
4 V V
GS
= 10 V
Pulsed
C
iss
C
oss
C
rss
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
- Capacitance - pF
1100.1 V
DS
- Drain to Source Voltage - V
10
1000
100
V
GS
= 0 V
f = 1 MH
Z
0.1 1 10
ID - Drain Current - A
td(on),tr,td(off),tf - Switchig Time - ns
td(off)
td(on)
tf
tr
SWITCHING CHARACTERISTICS
1000
100
10
V
DD =
25 V
V
GS =
10 V
R
G =
10 Ω
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
SD
- Source to Drain Current - A
0.8
0.6
0.4
0.2
0
V
SD
- Source to Drain Voltage - V
1.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1.2
1.4
V
GS
=
0 V
Pulsed
Data Sheet D15670EJ2V0DS 5
2SK1482
[MEMO]
Data Sheet D15670EJ2V0DS
6
2SK1482
[MEMO]
Data Sheet D15670EJ2V0DS 7
2SK1482
[MEMO]
2SK1482
M8E 00. 4
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