7R191-S004 - SKYWORKS SOLUTIONS

MRF8S23120HR3 MRF8S23120HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for LTE base station applications with frequencies from 2300 to

2400 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I

DQ =

800 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

Gps

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

2300 MHz 16.0 31.9 6.1 --37.1

2350 MHz 16.3 30.9 6.4 --37.9

2400 MHz 16.6 31.2 6.3 --37.5

!Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW (1)

Output Power (2 dB Input Overdrive from Rated Pout)

!Typical Pout @ 1 dB Compression Point ≃107 Watts CW

Features

!100% PAR Tested for Guaranteed Output Power Capability

!Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

!Internally Matched for Ease of Use

!Integrated ESD Protection

!Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

!Designed for Digital Predistortion Error Correction Systems

!Optimized for Doherty Applications

!RoHS Compliant

!In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage VDSS --0.5, +65 Vdc

Gate--Source Voltage VGS --6.0, +10 Vdc

Operating Voltage VDD 32, +0 Vdc

Storage Temperature Range Tstg --65 to +150 #C

Case Operating Temperature TC150 #C

Operating Junction Temperature (2,3) TJ225 #C

CW Operation @ TC=25#C

Derate above 25#C

CW 109

0.52

W/#C

Table 2. Thermal Characteristics

Characteristic Symbol Value (3,4) Unit

Thermal Resistance, Junction to Case

Case Temperature 76#C, 28 W CW, 28 Vdc, IDQ = 800 mA, 2400 MHz

Case Temperature 80#C, 120 W CW(1),28Vdc,I

DQ = 800 mA, 2400 MHz

R$JC

0.50

0.47

#C/W

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF8S23120H

Rev. 0, 11/2010

Freescale Semiconductor

Technical Data

2300--2400 MHz, 28 W AVG., 28 V

LTE

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF8S23120HR3

MRF8S23120HSR3

CASE 465--06, STYLE 1

NI--780

MRF8S23120HR3

CASE 465A--06, STYLE 1

NI--780S

MRF8S23120HSR3

%Freescale Semiconductor, Inc., 2010.

ll rights reserved.

RF Device Data

Freescale Semiconductor

MRF8S23120HR3 MRF8S23120HSR3

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22--A114) 2 (Minimum)

Machine Model (per EIA/JESD22--A115) A (Minimum)

Charge Device Model (per JESD22--C101) IV (Minimum)

Table 4. Electrical Characteristics (TA=25#C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65Vdc,V

GS =0Vdc)

IDSS — — 10 &Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28Vdc,V

GS =0Vdc)

IDSS — — 1 &Adc

Gate--Source Leakage Current

(VGS =5Vdc,V

DS =0Vdc)

IGSS — — 1 &Adc

On Characteristics

Gate Threshold Voltage

(VDS =10Vdc,I

D= 172 &Adc)

VGS(th) 1.0 1.8 2.5 Vdc

Gate Quiescent Voltage

(VDD =28Vdc,I

D= 800 mAdc, Measured in Functional Test)

VGS(Q) 1.8 2.6 3.3 Vdc

Drain--Source On--Voltage

(VGS =10Vdc,I

D=1.72Adc)

VDS(on) 0.1 0.15 0.3 Vdc

Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I

DQ = 800 mA, Pout = 28 W Avg., f = 2300 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ '5MHzOffset.

Power Gain Gps 14.5 16.0 17.5 dB

Drain Efficiency "D29.0 31.9 — %

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.1 —dB

Adjacent Channel Power Ratio ACPR —--37.1 --35.0 dBc

Input Return Loss IRL — -- 1 2 -- 7 dB

Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I

DQ = 800 mA, Pout =28WAvg.,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ '5MHzOffset.

Frequency

Gps

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

2300 MHz 16.0 31.9 6.1 --37.1 -- 1 2

2350 MHz 16.3 30.9 6.4 --37.9 -- 1 9

2400 MHz 16.6 31.2 6.3 --37.5 -- 1 8

1. Part internally matched both on input and output.

(continued)

MRF8S23120HR3 MRF8S23120HSR3

RF Device Data

Freescale Semiconductor

Table 4. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I

DQ = 800 mA, 2300--2400 MHz Bandwidth

Pout @ 1 dB Compression Point, CW P1dB —107 — W

IMD Symmetry @ 84 W PEP, Pout where IMD Third Order

Intermodulation 30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

IMDsym

—13 —

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres —62 —MHz

Gain Flatness in 100 MHz Bandwidth @ Pout =28WAvg. GF—0.6 —dB

Gain Variation over Temperature

(--30#Cto+85#C)

(G — 0.002 —dB/#C

Output Power Variation over Temperature

(--30#Cto+85#C) (1)

(P1dB —0.008 —dB/#C

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

RF Device Data

Freescale Semiconductor

MRF8S23120HR3 MRF8S23120HSR3

Figure 1. MRF8S23120HR3(HSR3) Test Circuit Component Layout

MRF8S23120H/S

Rev. 0

CUT OUT AREA

C14

C16

C3C15

C9 C11

C6* C13

C10 C12

C7*

*C6 and C7 are mounted vertically.

Table 5. MRF8S23120HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1 Ferrite Bead MPZ2012S300A TDK

C1, C4 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC

C2, C15 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC

C3 1.8 pF Chip Capacitor ATC100B1R5BT500XT ATC

C5, C6, C7 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC

C8 3.3 &F, 100 V Chip Capacitor C5750X7R2A335MT TDK

C9, C10, C11, C12, C14 10 &F, 50 V Chip Capacitors C5750X7R1H106KT TDK

C13 470 &F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp

C16 330 nF, 100 V Chip Capacitor C3225JB2A334KT TDK

R1 4.75 ), 1/4 W Chip Resistor CRCW12064R75FNEA Vishay

PCB 0.030*,+r=2.55 AD255A Arlon

MRF8S23120HR3 MRF8S23120HSR3

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

IRL, INPUT RETURN LOSS (dB)

2290

IRL

Gps

ACPR

f, FREQUENCY (MHz)

Figure 2. Output Peak--to--Average Ratio Compression (PARC)

Broadband Performance @ Pout = 28 Watts Avg.

-- 3 0

-- 1 0

-- 1 5

-- 2 0

-- 2 5

15.2

17.2

16.8

-- 3 9

-- 3 4

-- 3 5

-- 3 6

-- 3 7

"D, DRAIN

EFFICIENCY (%)

16.6

16.4

16.2

15.8

15.6

15.4

2305 2320 2335 2350 2365 2380 2395 2410

-- 3 8

-- 3 5

PARC

PARC (dB)

-- 1 . 8

-- 1

-- 1 . 2

-- 1 . 4

-- 1 . 6

-- 2

ACPR (dBc)

VDD =28Vdc,P

out =28W(Avg.),I

DQ = 800 mA

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF

Figure 3. Intermodulation Distortion Products

versus Two--Tone Spacing

TWO--TONE SPACING (MHz)

-- 6 0

-- 1 0

-- 2 0

-- 3 0

-- 5 0

1 100

IMD, INTERMODULATION DISTORTION (dBc)

-- 4 0

IM3--U

IM3--L

IM5--U

IM5--L

IM7--L

IM7--U

Figure 4. Output Peak--to--Average Ratio

Compression (PARC) versus Output Power

Pout, OUTPUT POWER (WATTS)

-- 1

-- 3

-- 5

-- 2

-- 4

OUTPUT COMPRESSION AT 0.01%

PROBABILITY ON CCDF (dB)

15 35 45 65

"D,DRAIN EFFICIENCY (%)

--1dB=26.5W

--2dB=36.5W

--3dB=48.5W

VDD =28Vdc,I

DQ = 800 mA, f = 2350 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

ACPR

PARC

ACPR (dBc)

-- 5 0

-- 2 0

-- 2 5

-- 3 0

-- 4 0

-- 3 5

-- 4 5

Gps, POWER GAIN (dB)

16.6

16.2

15.8

15.4

14.6

Gps

Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF

Gps, POWER GAIN (dB)

VDD =28Vdc,P

out = 84 W (PEP), IDQ = 800 mA

Two--Tone Measurements

(f1 + f2)/2 = Center Frequency of 2350 MHz

RF Device Data

Freescale Semiconductor

MRF8S23120HR3 MRF8S23120HSR3

TYPICAL CHARACTERISTICS

Gps

ACPR

Pout, OUTPUT POWER (WATTS) AVG.

Figure 5. Single--Carrier W--CDMA Power Gain, Drain

Efficiency and ACPR versus Output Power

-- 1 0

-- 2 0

11.5

17.5

"D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

16.5

15.5

10 100

-- 6 0

ACPR (dBc)

14.5

13.5

12.5

-- 3 0

-- 4 0

-- 5 0

Figure 6. Broadband Frequency Response

1800

f, FREQUENCY (MHz)

1900

GAIN (dB)

Gain

2000 2100 2200 2300 2400 2500 2600

IRL

-- 4 0

-- 1 0

-- 2 0

IRL (dB)

4--30

2300 MHz

2350 MHz

2400 MHz

VDD =28Vdc,I

DQ = 800 mA

Single--Carrier W--CDMA

3.84 MHz Channel Bandwidth

Input Signal PAR = 7.5 dB @

0.01% Probability on CCDF

VDD =28Vdc

Pin =0dBm

IDQ = 800 mA

2300 MHz

2350 MHz

2400 MHz

2300 MHz

2350 MHz

2400 MHz

W--CDMA TEST SIGNAL

0.0001

100

PEAK--TO--AVERAGE (dB)

Figure 7. CCDF W--CDMA IQ Magnitude

Clipping, Single--Carrier Test Signal

0.1

0.01

0.001

24 68

PROBABILITY (%)

W--CDMA. ACPR Measured in 3.84 MHz

Channel Bandwidth @ '5MHzOffset.

Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF

Input Signal

-- 6 0

--100

(dB)

-- 2 0

-- 3 0

-- 4 0

-- 5 0

-- 7 0

-- 8 0

-- 9 0

3.84 MHz

Channel BW

7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9

f, FREQUENCY (MHz)

Figure 8. Single--Carrier W--CDMA Spectrum

-- 7 . 2

--ACPR in 3.84 MHz

Integrated BW

+ACPRin3.84MHz

Integrated BW

-- 1 0

13579

MRF8S23120HR3 MRF8S23120HSR3

RF Device Data

Freescale Semiconductor

VDD =28Vdc,I

DQ = 800 mA,Pout =28WAvg.

MHz

Zsource

)

Zload

)

2290 8.41 -- j0.97 1.86 -- j4.43

2305 8.58 -- j0.55 1.83 -- j4.28

2320 8.78 -- j0.14 1.80 -- j4.14

2335 8.99 + j0.29 1.77 -- j4.01

2350 9.21 + j0.72 1.74 -- j3.88

2365 9.45 + j1.17 1.72 -- j3.77

2380 9.71 + j1.62 1.69 -- j3.66

2395 9.99 + j2.10 1.66 -- j3.54

2410 10.28 + j2.60 1.65 -- j3.43

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Figure 9. Series Equivalent Source and Load Impedance

Zsource Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

RF Device Data

Freescale Semiconductor

MRF8S23120HR3 MRF8S23120HSR3

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS

Pin, INPUT POWER (dBm)

VDD =28Vdc,I

DQ = 800 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle

Pout, OUTPUT POWER (dBm)

NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

3432 403130

Ideal

Actual

33 37 38 39

2350 MHz

2300 MHz

2400 MHz

2300 MHz

2400 MHz

2350 MHz

(MHz)

P1dB P3dB

Watts dBm Watts dBm

2300 152 51.8 185 52.7

2350 150 51.8 181 52.6

2400 147 51.7 177 52.5

Test Impedances per Compression Level

(MHz)

Zsource

)

Zload

)

2300 P1dB 4.03 -- j5.45 2.24 + j0.08

2350 P1dB 4.63 -- j6.15 2.21 + j0.35

2400 P1dB 5.57 -- j5.96 2.36 + j0.47

Figure 10. Pulsed CW Output Power

versus Input Power @ 28 V

MRF8S23120HR3 MRF8S23120HSR3

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

RF Device Data

Freescale Semiconductor

MRF8S23120HR3 MRF8S23120HSR3

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MRF8S23120HR3 MRF8S23120HSR3

RF Device Data

Freescale Semiconductor

PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following documents and software to aid your design process.

Application Notes

!AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

!EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

!Electromigration MTTF Calculator

!RF High Power Model

!.s2p File

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &

Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0Nov. 2010 !Initial Release of Data Sheet

RF Device Data

Freescale Semiconductor

MRF8S23120HR3 MRF8S23120HSR3

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Document Number: MRF8S23120H

Rev. 0, 11/2010