G E NSOLID STATE 3875081 GE SOLID STATE High-Speed Power Transistors O1, pe fj 375081 0017084 3 OiE 17084 p7-3?5~!7 2N697 Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems Features: = Characteristics stabilized by prolonged baking at 300C Typical pulse beta = 75 Low saturation voltages The RCA-2N697 is a silicon n-p-n transistor designed for use in high-speed-switching applications in military and industrial data processing equipment. This transistor is espectally designed and processed to assure stability of characteristics and reliable performance under Conditions of severe thermal and mechanical stress, and other environmental hazards. The 2N697 is supplied in a TO-205AD package. MAXIMUM RATINGS, Absolute-Maximum Values * Vogo cececceentarversceee * Voer (Ree = 10 2) * Veso eee renee eee erat * Pp; At Te > 26C. At Tas 26C. At Ta> 26C. _ * In accordance with JEDEC registration data. At ToS 25C cc cccccec tener tenet cet e tence sence ees ee aces eee ee sees File Number 16 TERMINAL DESIGNATIONS E Cc ICASE) 92CS-27512 JEDEC TO-205AD TEMPERATURE, MEASURED AT ENTER OF SEATING SURFACE ~ FREE-AIR TEMPERATURE CAS a MAXIMUM TRANSISTOR DISSIPATION=WATTS e & loo 50 180 TEMPERATURE C 100 -50 200 92CS-T6IRI Fig, 1 - Current derating chart. 300 cG E SOLID STATE OLE D mm 3875081 0017085 5 mm Tus -/7 THIS PAGE INTENTIONALLY LEFT BLANKGE 890 LID STATE, D1 DE 3475081 OO17064 7 a T-35-/7 r High-Speed Power Transistors 2N697 ELECTRICAL CHARACTERISTICS, at Ambient Temperature (Tq) = 25C, unless otherwise specified TEST CONDITIONS VOLTAGE CURRENT LIMITS CHARACTERISTIC | Vide mA de UNITS Vesi Vce Ic te | lg | Min.| Typ.| Max. *! lopo 30 0 0.01] 1) ya Tp = 150C 30 0 - ] 1 |100 *| hee 10 | 1505 40 |75 |120 ViBR)CBO 0.1 0 60 )75 | ViBR)EBO . o | 0.1 5475 |]-| Vv ; *) VoeR(sus) Ree = 102 1008 40 |60 | *| Vog(sat) 150 15 | jos [15 *| Vpg(sat) 150 1 | j] 1/13 : *| hte f = 20 MHz 10 50 25 ]10 | *! Cob 10 0 - {20 |35 | pF fy 1100 | | MHz @ Pulsed to prevent excessive heating of collector junction b Pulsed: Pulse duration 300 us, duty factor <2%. {n accordance with JEDEC registration data.