SPEC NO: DSAD2332 REV NO: V.5 DATE:NOV/23/2005 P AGE: 1 OF 5
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.L.LI ERP: 1301000676
Package Dimensions & Internal Circuit Diagram
Description
The High Efficiency Red source color devices are
made With Gallium Arsenide Phosphide on Gallium
Phosphide Orange Light Emitting Diode.
The Green source color devices are made with Gallium
Phosphide Green Light Emitting Diode.
P/N: SBC23-11EGWA HIGH EFFICIENCY RED
GREEN
57mm (2.3INCH) SINGLE DIGITNUMERIC
DISPLAY
Features
2.3 INCH DIGIT HEIGHT.
LOW CURRENT OPERATION.
EXCELLENT CHARACTER APPEARANCE.
HIGH LIGHT OUTPUT.
EASY MOUNTING ON P.C. BOARDS OR SOCKETS.
MULTICOLOR AVAILABLE.
MECHANICALLY RUGGED.
STANDARD : GRAY FACE, WHITE SEGMENT.
RoHS COMPLIANT.
Notes:
1. All dimensions are in millimeters (inches), Tolerance is ±0.25(0.01")unless otherwise noted.
2. Specifications are subject to change without notice.
SPEC NO: DSAD2332 REV NO: V.5 DATE:NOV/23/2005 P AGE: 2 OF 5
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.L.LI ERP: 1301000676
Selection Guide
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength High Efficiency Red
Green 627
565 nm IF=20mA
λD Dominant Wavelength High Efficiency Red
Green 625
568 nm IF=20mA
∆λ1/2 Spectral Line Half-width High Efficiency Red
Green 45
30 nm IF=20mA
C Capacitance High Efficiency Red
Green 15
15 pF VF=0V;f=1MHz
VF Forward Voltage
Per Segment or (DP) High Efficiency Red
Green 8(4)
8.8(4.4) 10(5)
10(5) V IF=20mA
IR Reverse Current
Per Segment or (DP) High Efficiency Red
Green 10
10 uA VR = 20(10)V
Electrical / Optical Characteristics at TA=25°C
Absolute Maximum Ratings at TA=25°C
Part No. Dice Lens Type
Iv (ucd)
@ 10mA Description
Min. Typ.
SBC23-11EGWA HIGH EFFICIENCY RED (GaAsP/GaP) WHITE DIFFUSED 4700 18000
GREEN (GaP) 4700 24000 Common Cathode,Rt.
Hand Decimal.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Parameter High Efficiency Red Green Units
Power dissipation
Per Segment or (DP) 300(150) 250(125) mW
DC Forward Current
Per Segment or (DP) 30 25 mA
Peak Forward Current [1]
Per Segment or (DP) 160 140 mA
Reverse Voltage
Per Segment or (DP) V
Operating/storage Temperature -40°C To +85°C
Lead Solder Temperature [2] 260°C For 5 Seconds
20(10)
SPEC NO: DSAD2332 REV NO: V.5 DATE:NOV/23/2005 P AGE: 3 OF 5
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.L.LI ERP: 1301000676
SBC23-11EGWA
High Efficiency Red
SPEC NO: DSAD2332 REV NO: V.5 DATE:NOV/23/2005 P AGE: 4 OF 5
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.L.LI ERP: 1301000676
Green
SPEC NO: DSAD2332 REV NO: V.5 DATE:NOV/23/2005 P AGE: 5 OF 5
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.L.LI ERP: 1301000676
PACKING & LABEL SPECIFICATIONS SBC23-11EGWA
Remarks:
If special sorting is required (e.g. binning based on forward voltage, Luminous intensity/ luminous flux, or wavelength),
the typical accuracy of the sorting process is as follows:
1. Wavelength: +/-1nm
2. Luminous intensity/ luminous flux: +/-15%
3. Forward Voltage: +/-0.1V
Note: Accuracy may depend on the sorting parameters.
