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Mar 5, 2013
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Preliminary
Data Sheet
NE663M04 / 2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
•Ideal for medium output power amplification
•NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
•Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
•fT = 25 GHz technology adopted
•Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Order Number Quantity Package Supplying Form
NE663M04
2SC5509
NE663M04-A
2SC5509-A
50 pcs (Non reel)
NE663M04-T2
2SC5509-T2
NE663M04-T2-A
2SC5509-T2-A
3 kpcs/reel
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
•8 mm wide embossed taping
•Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
I tnerruC rotcelloC C 100 mA
Total Power Dissipation PtotNote 190 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free air.
THERMAL RESISTANCE
Parameter Symbol Ratings Unit
Junction to Case Resistance Rth j-c 95 °C /W
Junction to Ambient Resistance Rth j-a 650 °C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0056EJ0300
Rev.3.00
Mar 5, 2013
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JEITA
Part No.
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NE663M04 / 2SC5509 Chapter Title
R09DS0056EJ0300 Rev.3.00 Page 2 of 8
Mar 5, 2013
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO V
CB = 5 V, IE = 0 – – 600 nA
Emitter Cut-off Current IEBO V
EB = 1 V, IC = 0 – – 600 nA
DC Current Gain hFENote 1 V
CE = 2 V, IC = 10 mA 50 70 100 –
RF Characteristics
Gain Bandwidth Product fT V
CE = 3 V, IC = 90 mA, f = 2 GHz 13 15 – GHz
Insertion Power Gain |S21e|2 V
CE = 2 V, IC = 50 mA, f = 2 GHz 8 11 – dB
Noise Figure NF VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
– 1.2 1.7 dB
Reverse Transfer Capacitance Cre Note 2 V
CB = 2 V, IE = 0, f = 1 MHz – 0.5 0.75 pF
Maximum Available Power Gain MAG Note 3 V
CE = 2 V, IC = 50 mA, f = 2 GHz – 14 – dB
Maximum Stable Power Gain MSG Note 4 V
CE = 2 V, IC = 50 mA, f = 2 GHz – 15 – dB
Gain 1 dB Compression Output
Power
PO (1 dB) V
CE = 2 V, IC = 70 mA Note 5, f = 2 GHz – 17 – dBm
3rd Order Intermodulation
Distortion Output Intercept Point
OIP3 V
CE = 2 V, IC = 70 mA Note 5, f = 2 GHz – 27 – dBm
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank FB/YFB
Marking T80
hFE Value 50 to 100
(K – √ (K2 – 1) )
S21
S12
S21
S12
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NE663M04 / 2SC5509 Chapter Title
R09DS0056EJ0300 Rev.3.00 Page 3 of 8
Mar 5, 2013
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Thermal/DC Characteristics
V
CE
= 2 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
20
10
00.40.2 0.6 0.8 1.0 1.2
400
350
300
250
200
150
190
330
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C), Case Temperature T
C
(˚C)
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
When case temperature
is specified
Mounted on
ceramic substrate
(15 × 15 mm, t = 0.6 mm)
Free Air
200
100
150
50
00.01 0.10.001 1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
150
50
100
021435
200 A
μ
100 A
μ
300 A
μ
400 A
μ
500 A
μ
600 A
μ
700 A
μ
800 A
μ
900 A
μ
1 000 A
μ
I
B
= 1 100 A
μ
Capacitance/fT Characteristics
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
0.60
0.80
0.20
0.40
0 1.0 3.0 4.02.0 5.0
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
010 1001 1 000
Remark The graphs indicate nominal characteristics.
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NE663M04 / 2SC5509
R09DS0056EJ0300 Rev.3.00 Page 4 of 8
Mar 5, 2013
Gain Characteristics
V
CE
= 2 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
20
25
30
5
10
15
0
0.1 1.0 10.0
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
15
20
25
10
5
01 10 100
MAGMSG
|S
21e
|
2
Output Characteristics
V
CE
= 2 V
f = 1 GHz
25
20
15
10
5
0
–5
150
25
50
75
125
100
0
–15 0–5–10 5 10 15
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power P
out
(dBm)
Collector Current I
C
(mA)
P
out
I
C
V
CE
= 2 V
f = 2 GHz
25
20
15
10
5
0
–5
150
25
50
75
125
100
0
–15 0–5–10 5 10 15
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power P
out
(dBm)
Collector Current I
C
(mA)
P
out
I
C
Remark The graphs indicate nominal characteristics.
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NE663M04 / 2SC5509 Chapter Title
R09DS0056EJ0300 Rev.3.00 Page 5 of 8
Mar 5, 2013
Noise Characteristics
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1.5 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
NF
G
a
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2.5 GHz
NF
G
a
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
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NE663M04 / 2SC5509
R09DS0056EJ0300 Rev.3.00 Page 6 of 8
Mar 5, 2013
EQUAL NF CIRCLE
V
CE
= 2 V
I
C
= 10 mA
f = 1 GHz
Unstable Area
3.5 dB
NF
min
= 0.95 dB
Γ
opt
1.5 dB
3.0 dB
4.0 dB
2.0 dB
2.5 dB
V
CE
= 2 V
I
C
= 10 mA
f = 2 GHz
NFmin = 1.1 dB
Γopt
2.0 dB
1.5 dB
2.5 dB
3.5 dB
4.0 dB
3.0 dB
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NE663M04 / 2SC5509
R09DS0056EJ0300 Rev.3.00 Page 7 of 8
Mar 5, 2013
NOISE PARAMETERS
VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 20 mA
Γopt Γopt f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50 f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50
0.8 0.70 18.0 0.17 93.0 0.11 0.8 1.12 20.7 0.30 −164.8 0.08
0.9 0.74 17.0 0.18 103.0 0.11 0.9 1.15 19.7 0.31 −162.7 0.09
1.0 0.78 16.2 0.20 112.7 0.11 1.0 1.18 18.8 0.32 −160.7 0.09
1.5 0.98 13.6 0.32 155.4 0.09 1.5 1.31 15.7 0.39 −151.5 0.10
1.8 1.10 12.5 0.40 176.2 0.07 1.8 1.38 14.4 0.45 −146.3 0.10
1.9 1.14 12.2 0.43 −177.8 0.06 1.9 1.41 14.0 0.47 −144.6 0.10
2.0 1.18 11.8 0.46 −172.2 0.06 2.0 1.43 13.6 0.49 −142.9 0.11
2.5 1.39 9.9 0.56 −151.8 0.08 2.5 1.56 11.5 0.56 −133.5 0.14
VCE = 2 V, IC = 10 mA VCE = 2 V, IC = 50 mA
Γopt Γopt f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50 f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50
0.8 0.87 19.6 0.13 170.3 0.09 0.8 1.75 21.3 0.49 −159.4 0.10
0.9 0.90 18.6 0.15 171.5 0.09 0.9 1.78 20.3 0.49 −157.2 0.10
1.0 0.93 17.8 0.17 173.0 0.09 1.0 1.80 19.4 0.50 −154.9 0.11
1.5 1.07 14.8 0.30 −174.1 0.08 1.5 1.92 16.2 0.55 −144.7 0.14
1.8 1.15 13.6 0.39 −164.1 0.07 1.8 2.00 14.8 0.59 −139.1 0.17
1.9 1.18 13.2 0.41 −160.6 0.07 1.9 2.02 14.4 0.60 −137.3 0.19
2.0 1.20 12.8 0.44 −157.2 0.07 2.0 2.04 13.9 0.61 −135.5 0.20
2.5 1.35 10.9 0.53 −142.3 0.10 2.5 2.17 11.8 0.65 −126.4 0.28
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NE663M04 / 2SC5509
R09DS0056EJ0300 Rev.3.00 Page 8 of 8
Mar 5, 2013
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
T80
0.59±0.05
0.11
+0.1
–0.05
0.600.65
0.650.65
1.30
1.25
2.0±0.1
12
43
1.25±0.1
2.05±0.1
0.30
+0.1
–0.05
0.40
+0.1
–0.05
0.30
+0.1
–0.05
0.30
+0.1
–0.05
(1.05)
0.5
(Top View) (Bottom View)
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NE663M04 / 2SC5509 Data Sheet
Description
Rev. Date Page Summary
1.00 Sep 9, 2004 − First edition issued
Throughout Renesas format is applied to this data sheet.
p.1 ORDERING INFORMATION is modified.
p.5 Up to date S-PARAMETERS.
3.00 Mar 5, 2013
p.8 Added a drawing backside to PACKAGE DIMENSIONS.
DISCONTINUED
NOTICE
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