A Business Partner of Renesas Electronics Corporation. Preliminary NE663M04 / 2SC5509 JEITA Part No. Data Sheet NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) ORDERING INFORMATION Part Number NE663M04 2SC5509 Order Number NE663M04-A 2SC5509-A Quantity 50 pcs (Non reel) NE663M04-T2 NE663M04-T2-A 2SC5509-T2 2SC5509-T2-A 3 kpcs/reel Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Supplying Form * 8 mm wide embossed taping * Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. NT The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25C) Symbol VCBO VCEO VEBO IC PtotNote Tj Tstg SC O Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Ratings 15 3.3 1.5 100 190 150 -65 to +150 Unit V V V mA mW C C Note Free air. THERMAL RESISTANCE Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 95 650 Unit C /W C /W DI <R> Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package IN U * * * * * ED FEATURES CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 1 of 8 A Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 Chapter Title ELECTRICAL CHARACTERISTICS (TA = +25 C) Symbol ICBO IEBO hFENote 1 fT |S21e|2 NF Conditions VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 10 mA MIN. TYP. MAX. Unit - - 50 - - 70 600 600 100 nA nA - ED Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure VCE = 3 V, IC = 90 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz 13 8 15 11 - - GHz dB - 1.2 1.7 dB - - - - 0.5 14 15 17 0.75 - - - pF dB dB dBm - 27 - dBm Cre Note 2 MAG Note 3 MSG Note 4 Gain 1 dB Compression Output Power PO (1 dB) 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz IN U Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = Zopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K - (K2 - 1) ) 4. MSG = S21 S12 NT S12 5. Collector current when PO (1 dB) is output SC O hFE CLASSIFICATION FB/YFB T80 50 to 100 DI Rank Marking hFE Value R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 2 of 8 A Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 Cha TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Thermal/DC Characteristics COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE, CASE TEMPERATURE 50 When case temperature is specified VCE = 2 V 330 300 Mounted on 250 ceramic substrate (15 x 15 mm, t = 0.6 mm) 200 190 150 Free Air 100 30 20 10 25 50 75 100 125 IN U 50 0 0.2 0 150 0.4 0.6 0.8 1.0 Ambient Temperature TA (C), Case Temperature TC (C) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 0 A IB = 1 10 A 1 000 900 A 800 A 700 A 600 A 500 A 400 A 300 A 200 A 100 A SC O 50 0 1 1.2 VCE = 2 V 150 NT 100 DC Current Gain hFE 150 Collector Current IC (mA) 40 ED 350 Collector Current IC (mA) Total Power Dissipation Ptot (mW) 400 2 3 4 100 50 0 0.001 5 0.01 0.1 1 10 100 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) Capacitance/fT Characteristics GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1.00 0.80 0.60 0.40 0.20 0 1.0 2.0 3.0 4.0 5.0 Collector to Base Voltage VCB (V) 30 Gain Bandwidth Product fT (GHz) f = 1 MHz DI Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 25 VCE = 3 V f = 2 GHz 20 15 10 5 0 1 10 100 1 000 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 3 of 8 A Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 Gain Characteristics 40 VCE = 2 V IC = 50 mA 35 30 MSG MAG 25 ED Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 20 15 10 |S21e|2 5 0 0.1 1.0 10.0 IN U Frequency f (GHz) VCE = 2 V f = 1 GHz 25 MSG MAG 20 15 |S21e|2 10 5 0 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 2 V f = 2 GHz 25 20 MSG 1 10 100 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) SC O MAG 15 NT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Output Characteristics 15 25 125 20 100 IC 10 75 5 50 0 25 -5 -15 -10 -5 0 5 10 0 15 Input Power Pin (dBm) Output Power Pout (dBm) Pout 150 Collector Current IC (mA) 20 VCE = 2 V f = 1 GHz DI Output Power Pout (dBm) 25 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 150 VCE = 2 V f = 2 GHz 125 Pout 15 100 10 75 5 50 IC 0 -5 -15 -10 -5 0 25 5 10 Collector Current IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 0 15 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 4 of 8 A Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 Cha Noise Characteristics 25 20 Ga 3.0 15 2.0 10 5 1.0 30 VCE = 2 V f = 1.5 GHz 5.0 20 4.0 Ga 15 3.0 10 2.0 5 1.0 NF NF 20 Ga 3.0 15 10 2.0 1.0 NF 1 10 6.0 VCE = 2 V f = 2.5 GHz 5.0 4.0 3.0 NT Noise Figure NF (dB) 25 4.0 0.0 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 VCE = 2 V f = 2 GHz 0 100 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 1 IN U Collector Current IC (mA) 5.0 0.0 0 100 10 Noise Figure NF (dB) 1 Associated Gain Ga (dB) 0.0 25 5 0 100 SC O Collector Current IC (mA) 25 20 15 Ga 10 2.0 1.0 0.0 30 NF 1 10 5 Associated Gain Ga (dB) 4.0 Associated Gain Ga (dB) Noise Figure NF (dB) 5.0 6.0 ED 30 VCE = 2 V f = 1 GHz Noise Figure NF (dB) 6.0 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] URL http://www.renesas.com/products/microwave/ DI <R> R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 5 of 8 A Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 EQUAL NF CIRCLE Unstable Area ED VCE = 2 V IC = 10 mA f = 1 GHz NFmin = 0.95 dB IN U opt 1.5 dB 2.0 dB 2.5 dB 3.0 dB 3.5 dB SC O VCE = 2 V IC = 10 mA f = 2 GHz NT 4.0 dB DI NFmin = 1.1 dB opt R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 1.5 dB B 2.0 d dB 2.5 .0 dB dB B 3 3.5 .0 d 4 Page 6 of 8 A Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 NOISE PARAMETERS VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 20 mA NFmin (dB) Ga (dB) MAG. ANG. 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.70 0.74 0.78 0.98 1.10 1.14 1.18 1.39 18.0 17.0 16.2 13.6 12.5 12.2 11.8 9.9 0.17 0.18 0.20 0.32 0.40 0.43 0.46 0.56 93.0 103.0 112.7 155.4 176.2 -177.8 -172.2 -151.8 Rn/50 f (GHz) NFmin (dB) Ga (dB) 0.11 0.11 0.11 0.09 0.07 0.06 0.06 0.08 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.12 1.15 1.18 1.31 1.38 1.41 1.43 1.56 20.7 19.7 18.8 15.7 14.4 14.0 13.6 11.5 VCE = 2 V, IC = 10 mA opt MAG. ANG. 0.30 0.31 0.32 0.39 0.45 0.47 0.49 0.56 -164.8 -162.7 -160.7 -151.5 -146.3 -144.6 -142.9 -133.5 Rn/50 0.08 0.09 0.09 0.10 0.10 0.10 0.11 0.14 ED opt f (GHz) VCE = 2 V, IC = 50 mA opt MAG. ANG. Ga (dB) 0.8 0.9 0.87 0.90 19.6 18.6 0.13 0.15 1.0 1.5 1.8 1.9 2.0 2.5 0.93 1.07 1.15 1.18 1.20 1.35 17.8 14.8 13.6 13.2 12.8 10.9 0.17 0.30 0.39 0.41 0.44 0.53 opt MAG. ANG. Rn/50 f (GHz) NFmin (dB) Ga (dB) 170.3 171.5 0.09 0.09 0.8 0.9 1.75 1.78 21.3 20.3 0.49 0.49 -159.4 -157.2 0.10 0.10 173.0 -174.1 -164.1 -160.6 -157.2 -142.3 0.09 0.08 0.07 0.07 0.07 0.10 1.0 1.5 1.8 1.9 2.0 2.5 1.80 1.92 2.00 2.02 2.04 2.17 19.4 16.2 14.8 14.4 13.9 11.8 0.50 0.55 0.59 0.60 0.61 0.65 -154.9 -144.7 -139.1 -137.3 -135.5 -126.4 0.11 0.14 0.17 0.19 0.20 0.28 IN U NFmin (dB) Rn/50 DI SC O NT f (GHz) R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 7 of 8 A Business Partner of Renesas Electronics Corporation. NE663M04 / 2SC5509 PACKAGE DIMENSIONS ED FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) (Top View) (Bottom View) IN U 0.5 0.65 SC O 0.11+0.1 -0.05 NT 0.30+0.1 -0.05 1.30 3 4 1 0.30+0.1 -0.05 0.590.05 (1.05) 0.65 0.60 0.65 1.25 T80 2.00.1 2 1.250.1 0.30+0.1 -0.05 0.40+0.1 -0.05 2.050.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base DI <R> R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 Page 8 of 8 NE663M04 / 2SC5509 Data Sheet Date Page 1.00 3.00 Sep 9, 2004 Mar 5, 2013 - Throughout p.1 p.5 p.8 Description Summary First edition issued Renesas format is applied to this data sheet. ORDERING INFORMATION is modified. Up to date S-PARAMETERS. Added a drawing backside to PACKAGE DIMENSIONS. DI SC O NT IN U Rev. ED Revision History All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by California Eastern Laboratories or Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a California Eastern Laboratories sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories. 12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. SC O NT IN UE D 1. NOTE 1: "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. NOTE 2: "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. NOTE 3: Products and product information are subject to change without notice. DI CEL Headquarters * 4590 Patrick Henry Drive, Santa Clara, CA 95054 * Phone (408) 919-2500 * www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: NE663M04-T2-A NE663M04-EVPW08 NE663M04-EVPW19 2SC5509-T2-A 2SC5509-A