GM76C256CL-70W - Hynix Semiconductor, Inc.

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev 02 / Apr. 2001 Hynix Semiconductor

GM76C256CW Series

32Kx8bit CMOS SRAM

Document Title

32K x8 bit 2.7~5.5V Low Power CMOS slow SRAM

Revision History

Revision No History Draft Date Remark

00 Revision History Insert Jul.07.2000 Final

Revised

- Datasheet format change

- PDIP package type insert

- Pin configuration change

01 Marking Information Add Dec.04.2000 Final

Revised

- AC Test Condition Add : 5pF Test Load

- tCLZ Value Change : 15ns - > 10ns

- tOLZ Value Change : 10ns - > 5ns

02 Changed Logo Apr.30.2001 Final

- HYUNDAI -> hynix

GM76C256CW Series

Rev 02 / Apr. 2001 2

DESCRIPTION

The GM76C256CW is a high-speed, low power

and 32,786 X 8-bits CMOS Static Random

Access Memory fabricated using Hynix's high

performance CMOS process technology. It is

suitable for use in low voltage operation and

battery back-up application. This device has a

data retention mode that guarantees data to

remain valid at the minimum power supply

voltage of 2.0 volt.

FEATURES

• Fully static operation and Tri-state output

• TTL compatible inputs and outputs

• Low power consumption

• Battery backup(L/LL-part)

- 2.0V(min.) data retention

• Standard pin configuration

- 28 pin 600mil PDIP

-

28 pin 330mil SOP

- 28 pin 8x13.4 mm TSOP-I

(Standard)

Product Voltage Speed Operation Standby Current(uA) Temperature

No. (V) (ns) Current(mA)

L LL (°C)

GM76C256CW 5.0 55/70 10 40 20 0~70(Normal)

3.0 120/150 2 20 10

Note 1. Current value is max.

PIN CONNECTION

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

Vcc

/WE

A8

A9

A11

/OE

A10

/CS

I/O8

I/O7

I/O6

I/O5

I/O4

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

Vss

A13

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

Vcc

/WE

A8

A9

A11

/OE

A10

/CS

I/O8

I/O7

I/O6

I/O5

I/O4

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

Vss

A13

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

A10

/CS

I/O7

I/O6

I/O5

I/O4

Vss

I/O3

I/O2

I/O1

A0

A1

A2

/OE

A11

A9

A8

A13

/WE

Vcc

A14

A12

A7

A6

A5

A4

A3

I/O8

PDIP SOP TSOP-I(Standard)

PIN DESCRIPTION BLOCK DIAGRAM

Pin Name Pin Function

/CS Chip Select

/WE Write Enable

/OE Output Enable

A0 ~ A14 Address Inputs

I/O1 ~ I/O8 Data Input/Output

Vcc Power(+5.0V)

Vss Ground

A14

COLUMN DECODER

A0 ROW DECODER

MEMORY ARRAY

512x512

SENSE AMP

OUTPUT BUFFER

I/O1

I/O8

ADD INPUT BUFFER

/CS

/OE

/WE

WRITE DRIVER

CONTROL

LOGIC

GM76C256CW Series

Rev 02 / Apr. 2001 2

ORDERING INFORMATION

Part No. Speed Power Temp Package

GM76C256CL-W 55/70 L-part

0 to 70°C

PDIP

GM76C256CLL-W 55/70 LL-part

0 to 70°C

PDIP

GM76C256CLFW-W 55/70 L-part

0 to 70°C

SOP

GM76C256CLLFW-W 55/70 LL-part

0 to 70°C

SOP

GM76C256CLT-W 55/70 L-part

0 to 70°C

TSOP-I Standard

GM76C256CLLT-W 55/70 LL-part

0 to 70°C

TSOP-I Standard

ABSOLUTE MAXIMUM RATING (1)

Symbol Parameter Rating Unit

Vcc, VIN, VOUT

Power Supply, Input/Output Voltage -0.3 to 7.0 V

TA Operating Temperature 0 to 70 °C

TSTG Storage Temperature -65 to 150 °C

PD Power Dissipation 1.0 W

IOUT Data Output Current 50 mA

TSOLDER Lead Soldering Temperature & Time 260 •10 °C•sec

Note

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is stress rating only and the functional operation of the device under these or

any other conditions above those indicated in the operation of this specification is not implied.

Exposure to the absolute maximum rating conditions for extended period may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

Vcc = 5V Vcc = 2.7 ~ 5.5V

Symbol Parameter Min. Typ. Max. Min. Typ. Max. Unit

Vcc Power Supply Voltage 4.5 5.0 5.5 2.7 3.0 5.5 V

Vss Ground 0 0 0 0 0 0 V

VIH Input High Voltage 2.2 - Vcc+0.3

2.2 - Vcc+0.3

V

VIL Input Low Voltage -0.3(1) - 0.8 -0.3(1) - 0.4 V

Note

1. VIL = -3.0V for pulse width less than 50ns

TRUTH TABLE

/CS

/WE

/OE

Mode I/O Operation

H X X Standby High-Z

L H H Output Disabled

High-Z

L H L Read Data Out

L L X Write Data In

Note

1. H=VIH, L=VIL, X=Don't Care

GM76C256CW Series

Rev 02 / Apr. 2001 3

DC CHARACTERISTICS

Vcc = 3V ±10%,5V ±10%, TA = 0°C to 70°C, unless otherwise specified.

Vcc = 3V

¡¾

10% Vcc = 5V

¡¾

10%

Symbol

Parameter Test Condition Min

Typ

Max

Min

Typ

Max

Unit

ILI Input Leakage Current Vss < VIN < Vcc -1 - 1 -1 - 1 uA

ILO Output Leakage Current

Vss < VOUT < Vcc,

/CS = VIH or

/OE = VIH or /WE = VIL

-1 - 1 -1 - 1 uA

Icc Operating Power Supply

Current /CS = VIL,

VIN = VIH or VIL,

II/O = 0mA

- 0.6

2 - 7 10 mA

/CS = VIL, II/O = 0mA,

Min. Duty Cycle = 100%,

VIN = VIH or VIL

- - 30 - - 70 mA ICC1 Average Operating

Current

/CS = VIL, II/O =0mA,

Cycle = 1us,

VIN = VIH or VIL

- - 5 - - 10 mA

ISB TTL Standby Current

(TTL Inputs) /CS= VIH,

VIN = VIH or VIL - - 0.3

- - 1 mA

ISB1 CMOS Standby Current

/CS>Vcc-0.2V, L 20 - - 40 uA

(CMOS Inputs) VIN>Vcc-0.2V or

VIN<Vss+0.2V LL 10 - - 20 uA

VOL Output Low Voltage IOL = 2.1mA 0.4

- - 0.4

V

VOH Output High Voltage IOH = -1.0mA 2.2

2.4

- - V

Note : Typical values are at Vcc =3.0V/5.0V, TA = 25°C

AC CHARACTERISTICS(I)

Vcc = 3V ±10%, TA = 0°C to 70°C (Normal) unless otherwise specified.

-55 -70 Min. Max.

Min. Max.

1 tRC Read Cycle Time 120 - 150 - ns

2 tAA Address Access Time - 120 - 150 ns

3 tACS Chip Select Access Time - 120 - 150 ns

4 tOE Output Enable to Output Valid - 55 - 60 ns

5 tCLZ Chip Select to Output in Low Z 10 - 10 - ns

6 tOLZ Output Enable to Output in Low Z 5 - 5 - ns

7 tCHZ Chip Disable to Output in High Z 0 40 0 50 ns

8 tOHZ Out Disable to Output in High Z 0 40 0 50 ns

9 tOH Output Hold from Address Change 10 - 10 - ns

10

tWC Write Cycle Time 120 - 150 - ns

11

tCW Chip Selection to End of Write 100 - 120 - ns

12

tAW Address Valid to End of Write 100 - 120 - ns

13

tAS Address Set-up Time 0 - 0 - ns

14

tWP Write Pulse Width 65 - 70 - ns

15

tWR Write Recovery Time 0 - 0 - ns

16

tWHZ Write to Output in High Z 0 40 0 50 ns

17

tDW Data to Write Time Overlap 40 - 50 - ns

18

tDH Data Hold from Write Time 0 - 0 - ns

19

tOW Output Active from End of Write 10 - 15 - ns

READ CYCLE

WRITE CYCLE

Symbol

Parameter

#

Unit

GM76C256CW Series

Rev 02 / Apr. 2001 4

AC CHARACTERISTICS(II)

Vcc = 5V ±10%, TA = 0°C to 70°C (Normal) unless otherwise specified.

-55 -70 Min. Max.

Min. Max.

1 tRC Read Cycle Time 55 - 70 - ns

2 tAA Address Access Time - 55 - 70 ns

3 tACS Chip Select Access Time - 55 - 70 ns

4 tOE Output Enable to Output Valid - 30 - 35 ns

5 tCLZ Chip Select to Output in Low Z 10 - 10 - ns

6 tOLZ Output Enable to Output in Low Z 5 - 5 - ns

7 tCHZ Chip Disable to Output in High Z 0 20 0 25 ns

8 tOHZ Out Disable to Output in High Z 0 20 0 25 ns

9 tOH Output Hold from Address Change 5 - 10 - ns

10

tWC Write Cycle Time 55 - 70 - ns

11

tCW Chip Selection to End of Write 50 - 65 - ns

12

tAW Address Valid to End of Write 50 - 60 - ns

13

tAS Address Set-up Time 0 - 0 - ns

14

tWP Write Pulse Width 45 - 50 - ns

15

tWR Write Recovery Time 0 - 0 - ns

16

tWHZ Write to Output in High Z 0 20 0 25 ns

17

tDW Data to Write Time Overlap 25 - 30 - ns

18

tDH Data Hold from Write Time 0 - 0 - ns

19

tOW Output Active from End of Write 5 - 5 - ns

AC TEST CONDITIONS

TA = 0°C to 70°C (Normal) unless otherwise specified.

Parameter Value

Input Pulse Level 5V 0.6V to 2.4V

3V 0.4V to 2.2V

Input Rise and Fall Time 5ns

Input and Output Timing Reference Level 1.5V

Output Load tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW CL = 5pF + 1TTL Load

Others CL = 100pF + 1TTL Load

AC TEST LOADS

CL(1)

TTL

Note : Including jig and scope capacitance

CAPACITANCE

TA = 25°C, f = 1.0MHz

Symbol Parameter Condition Max. Unit

CIN Input Capacitance VIN = 0V 6 pF

CI/O Input /Output Capacitance VI/O = 0V 8 pF

Note : These parameters are sampled and not 100% tested

READ CYCLE

WRITE CYCLE

Symbol

Parameter

#

Unit

GM76C256CW Series

Rev 02 / Apr. 2001 5

TIMING DIAGRAM

READ CYCLE 1

ADDR

OE

CS

Data

Out

Data Valid

tRC

tACS

tCLZ

tOE

tOLZ

tAA

tOH

tOHZ

tCHZ

High-Z

Note(READ CYCLE):

1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot

referenced to output voltage levels.

2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device

and from device to device.

3. /WE is high for the read cycle.

READ CYCLE 2

tRC

tAA

Data ValidPrevious Data

tOH tOH

ADDR

Data

Out

Note(READ CYCLE):

1. /WE is high for the read cycle.

2. Device is continuously selected /CS= VIL.

3. /OE =VIL.

GM76C256CW Series

Rev 02 / Apr. 2001 6

WRITE CYCLE 1(/OE Clocked)

ADDR

OE

CS

Data

Out

tWC

tDW

tOHZ

WE

Data Valid

tDH

tWP

tAS

Data In

tWR

tCW

tAW

WRITE CYCLE 2 (/OE Low Fixed)

tDW

tWHZ

WE

Data Valid

tDH

tWP

tAS

Data In

tWR

tCW

tAW

(7)

(8)

tOW

ADDR

CS

Data

Out

tWC

GM76C256CW Series

Rev 02 / Apr. 2001 7

Notes(WRITE CYCLE):

1. A write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition

among /CS going low and /WE going low: A write ends at the earliest transition among /CS going high

and /WE going high. tWP is measured from the beginning of write to the end of write.

2. tCW is measured from the later of /CS going low to the end of write .

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends as /CS,

or /WE going high.

5. If /OE and /WE are in the read mode during this period, and the I/O pins are in the output low-Z state,

input of opposite phase of the output must not be applied because bus contention can occur.

6. If /CS goes low simultaneously with /WE going low, or after /WE going low, the outputs remain in high

impedance state.

7. DOUT is the same phase of the latest written data in this write cycle.

8. DOUT is the read data of the new address.

DATA RETENTION CHARACTERISTIC

Ta=0°C to 70°C (Normal)

Symbol

Parameter Test Condition Min Typ Max Unit

VDR Vcc for Data Retention CS>Vcc-0.2V, 2.0 - - V

VIN>Vcc-0.2V or VIN<Vss+0.2V

ICCDR Data Retention Current Vcc=3.0V, L - 1 50 uA

/CS>Vcc-0.2V, LL - 0.5 10 uA

VIN>Vcc-0.2V or

VIN<Vss+0.2V

tCDR Chip Deselect to Data

Retention Time See Data Retention 0 - - ns

tR Operating Recovery Time Timing Diagram tRC(2)

- - ns

Notes

1. Typical values are under the condition of TA = 25°C.

2. tRC is read cycle time.

DATA RETENTION TIMING DIAGRAM

CS

VDR

CS>VCC-0.2V

tCDR tR

VSS

VCC

4.5V

2.2V

DATA RETENTION MODE

GM76C256CW Series

Rev 02 / Apr. 2001 8

PACKAGE INFORMATION

28pin 600mil Dual In-Line Package(Blank)

• UNIT : INCH(mm) MIN.

MAX.

1.467(37.262)

1.447(36.754)

0.140(3.556)

0.120(3.048)

0.155(3.937)

0.145(3.683)

0.020(0.508)

0.021(0.533)

0.015(0.381)

0.100(2.54)BSC

0.065(1.650)

0.050(1.270)

0.090(2.286)

0.070(1.778)

0.014(0.356)

0.008(0.200)

0.600(15.240)BSC

0.550(13.970)

0.530(13.462)

0.035(0.889)

3 deg

11 deg

28pin 330mil Small O utline Package(FW)

UNIT : INCH(mm)

0.346(8.788)

0.338(8.585)

0.480(12.192)

0.460(11.684)

0.110(2.794)

0.094(2.388)

0.014(0.356)

0.002(0.051)

0.050(1.270)BSC 0.020(0.508)

0.014(0.356)

0.728(18.491)

0.720(18.288) 0.012(0.305)

0.008(0.203)

0.050(1.270)

0.030(0.762)

MAX

.

MIN.

GM76C256CW Series

Rev 02 / Apr. 2001 9

28pin 8x13.4mm Thin Small Outline Package Standard(T)

0.468(11.9)

0.460(11.7)

0.536(13.6)

0.520(13.2)

0.027(0.7)

0.012(0.3) 0.008(0.2)

0.004(0.1)

0.319(8.1)

0.311(7.9) 0.040(1.02)

0.036(0.91)

0.008(0.20)

0.002(0.05)

0.022(0.55 BSC)

UNIT : INCH(mm)MAX.

MIN.

GM76C256CW Series

Rev 02 / Apr. 2001 10

MARKING INFORMATION

HYUNDAI

GM7 6 C256Cc c -s s W

y y w w KOREA

PDIP

Package Marking Example

Index

•HYUNDAI : Hynix Logo

•KOREA : Origin Country

•GM76C256C : Part Name

•cc : Power Consumption

-L: Low Power

-LL : Low Low Power

•Blank / FW / T : Package Type

-Blank : DIP

-FW : SOP

-T: TSOP-I

•ss : Speed -55 : 55ns

-70 : 70ns

•W: Wide Voltage

•yy : Year ( ex : 00 = year 2000, 01 = year 2001 )

•ww : Work Week ( ex : 12 = ww12 )

Note

-Capital Letter : Fixed Item

-Small Letter : Non-fixed Item

TSOP-I

SOP

HYUNDAI

GM7 6 C2 5 6 Cc c FW s s

y y w w K ORE A

W

HYUNDAI

GM7 6 C2 5 6 Cc c Ts s W

y y w w K ORE A

HYUNDAI

GM7 6 C256Cc c -s s W

y y w w KOREA

PDIP

Package Marking Example

Index

•HYUNDAI : Hynix Logo

•KOREA : Origin Country

•GM76C256C : Part Name

•cc : Power Consumption

-L: Low Power

-LL : Low Low Power

•Blank / FW / T : Package Type

-Blank : DIP

-FW : SOP

-T: TSOP-I

•ss : Speed -55 : 55ns

-70 : 70ns

•W: Wide Voltage

•yy : Year ( ex : 00 = year 2000, 01 = year 2001 )

•ww : Work Week ( ex : 12 = ww12 )

Note

-Capital Letter : Fixed Item

-Small Letter : Non-fixed Item

TSOP-I

SOP

HYUNDAI

GM7 6 C2 5 6 Cc c FW s s

y y w w K ORE A

W W

HYUNDAI

GM7 6 C2 5 6 Cc c Ts s W

y y w w K ORE A

HYUNDAI

GM7 6 C2 5 6 Cc c Ts s W

y y w w K ORE A