TOSHIBA SG2000EX26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG2000EX26 INVERTER APPLICATION e Repetitive Peak Off-State Voltage : VpRM = 2500 V (Note 1) RMS On-State Current @ Peak Turn-Off Current : IT (RMS) = 1050 A : ITGQM = 2000 A @ Critical Rate of Rise of On-State Current @ Critical Rate of Rise of Off-State Voltage MAXIMUM RATINGS : di/dt = 400 A/ ps : dv/dt = 1000 V/s Unit in mm 2-G3.5402 DEFTH 2.12404 395410 1-4) 0.7MIN. 1) 12) _ @-(1) CATHODE @-(2) CATHODE (BLACK) @ ANODE @ GATE JEDEC EIAJ TOSHIBA 13-93E1A CHARACTERISTIC SYMBOL | RATING | UNIT Repetitive Peak Off-state Voltage (Note 1) VDRM 2500 Vv Repetitive Peak Reverse Voltage VRRM 16 Vv Peak Turn-Off Current (Note 2) | IrGqm 2000 A R.M.S On-State Current (Note 3) | It(RMS) 1050 A Peak One Cycle Surge On-State Current (non repetitive, 10 ms- ITSM 18000 A width half sine waveform) Critical Rate Of Rise Of On-State . Current (Note 4) di/dt 400 Alys Peak Forward Gate Current IrFGM 70 A Average Forward Gate Power Dissipation PFG (AV) 14 w Average Reverse Gate Power Dissipation PRG (AV) 120 w R.M.S Gate Current (Note 5) | IG (RMS) 42 A Peak Reverse Gate Voltage (at Static) | YRGM 16 Vv Operating Junction Temperature T; _40~125 C Range Storage Temperature Range Tstg 40~150 C Mounting Force _ 19.6 + 2.0 kN (Note 1): V@K = -2V (Note 2): 0.2 H (Note 3): 50Hz Half Sine Waveform at Ts = 80C (Note 4): Vp =1/2 VprM, Iam = 30A (Note 5) : Weight : 800 VpM = VpRM; Cg = 2 #F, Rg = 5, digg/dt = 40 A/ us, Vpgp = 700V, Lg = Ambient Temperature of coaxial gate-cathode lead = 90C 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to abserve standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a g uide for the ap plications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-02-17 1/4TOSHIBA SG2000EX26 ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION MIN | TYP. | MAX | UNIT Repetitive Peak Off-state VpRM = RATED, Vox = -2V, Current 1DRM Tj = 125C i i 50) mA Repetitive Peak Reverse _ _ Current IRRM VRRM = RATED, Tj = 125C 10] mA Repetitive Peak Reverse _ - _ 49RK0 Gate Current IRGM | VRGM = 16V, Tj = 125C 10| mA Peak On-State Voltage VIM IpM = 2000 A, Tj = 125C 3.50] V T; = 40C 1.50] V Tri 1 J Gate Trigger Voltage VoT Vp = 24V, T; = 25C = = Loolv Rp = 0.10 T= -40C | | | 90] A Gate Trigger Current IgtT 1; = 25C = = 301A : Vp =1/2 VpRM Turn-On Delay T t , 2.0 arnmn Selay ime d di/dt = 400 A/ ps, es Igo = 30A, Ip = 2000 A, Turn-On Time tet T; = 25C 8.0] us sys . VDRM = 2/3 RATED, 1 f f Off. Critical Rate Of Rise Of O dv/dt |T; = 125C, Vox = 2V, 1000} | |V/zps State Voltage : ; Exponential Rise Storage Time tg ITGQ = 2000 A, Vpm = VpRM: 20} us Gate Turn-Off Time teq Rg = 59, Vp = 1/2 VpRM, | | 23] ps ; diGQ/dt = 40 A/ us, Tail Time ttail Cs = 2 uF, Vpsp < 700 Vv, _ 60 _ LS Gate Turn-Off Current IgQ Tj = 125C, Lg = 0.2 H 450; A Thermal Resistance (Junction to Fin) Ring |DC 7 | 0-018 C/W 2000-02-17 2/4TOSHIBA SG2000EX26 tp Up (max) Iot, Var Tj (max) -, 5000 16 1.6 Z a N = 94 ~ 2 3000 s ~ YD v S fe me \ Ry, = 0.10 5 5 Ny fs eo 12 ~ 120 > o>) e 5 4 : B= 1000 Fs ~s Z ZS BON ~~ 5 S Be 8 <t- Ver 08 8 nf = \ > 2 500 a \ hs J 2 O o 3} z g N\ 8 = 300 Eo 4 MS os F q >] < EX m 5 3 I@r < A TT 100 0 0 1.0 2.0 3.0 4.0 -40 0 40 80 120 160 INSTANTANEOUS ON-STATE VOLTAGE Ur (V) JUNCTION TEMPERATURE Tj (C) _ EON ITM (typ.) EOFF Iraq (typ.) 2 15 4 z Vp = 1250V | Vp = 2500 V, Vp = 1250V fe : S IGM = 80 A, Cg = 2 uF ; a digg /dt = 40 A/ ys |__di/dt = 400 A/ a 8 dig /dt = 30.A/ us , us 5 Cg = 2 uF, Rg = 5.0. > Rs = 6 02, Tj = 126C 3 f = od a S=O0.2 u > 1.0 ea & ~ a < eS a ~ z ss 200 Sea 4 - Le Qo = 05 we v4 a GS 4 z 3 S 2 a eB 0 0 0 1000 2000 0 1000 2000 ON-STATE CURRENT Ipy (A) TURN-OFF CURRENT Itgq (A) QaQq ITaQq (typ.) ITaGqm Cs a 6 < 4 o 3 = g 3 z 3 Lg = 0.20 HL 4 va Ll Lao] cI EB a 0.30. 2 a ee = 4 ae a 4 os 3 Ya : Dp 2 = a digg /dt = 50 A/ ps 5 fe 2 Cg =2 pF ts f 2 2 oa Vpsp = 900 V 3 V7 Vp & 2500 V (Cg : 4~6 pF) a T; = 125C Z y Vpm = 2000 V (Cg: <4 pF) P i 1 Vi Vp = 1250V fa m 4 digg/dt= 40 A/ ys & Qcq < Vag =15V o 0 i Vpsp = 750 + 25 x Cg (V) 0 0 1000 2000 3000 0 1 2 3 4 5 6 7 TURN-OFF CURRENT Ipgq (A) SNUBBER CAPACITANCE Cg (uF) 2000-02-17 3/4TOSHIBA PEAK ONE-CYCLE SURGE ON-STATE CURRENT Iypgm (kA) ITSM tp 50 30 10 5 3| HALF SINE WAVE FORM [\. f tem |"P, Ig =3.0A 0.1 0305 1 38 5 10 30 50 100 PULSE WIDTH tp (ms) TRANSIENT THERMAL IMPEDANCE thE CCAW) SG2000EX26 Tth G-f) t (max) @ CATHODE SIDE (ms) @ ANODE SIDE (ms) @ DOUBLE SIDE (ms) CATHODE SIDE (s) ANODE SIDE (s) DOUBLE SIDE (s) 35 10 30 50 100 800 500 1000 TIME t @ns AND gs) 2000-02-17 4/4