Rev 2: Oct 2004 AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package. VDS (V) = 30V ID = 110A RDS(ON) < 6.5m (VGS = 10V) RDS(ON) < 10.0m (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25C G Pulsed Drain Current Avalanche Current C C TC=25C Power Dissipation B A V Junction and Storage Temperature Range 200 IAR 30 A 120 mJ EAR 100 W 50 3.1 W 2 TJ, TSTG -55 to 175 Symbol t 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A 65 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead 20 ID IDM PD TC=100C TA=25C Power Dissipation Units V 110 TC=100C B Repetitive avalanche energy L=0.1mH Maximum 30 RJA RJL Typ 8.1 33 1 C Max 12 40 1.5 Units C/W C/W C/W AOB420, AOB420L Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 110 RDS(ON) Static Drain-Source On-Resistance TJ=55C VGS=10V, ID=30A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V A VGS=4.5V, ID=30A 8.2 10 VDS=5V, ID=30A 60 DYNAMIC PARAMETERS Ciss Input Capacitance Rg 2.5 11 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance nA 6.5 Forward Transconductance Output Capacitance 2.15 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=30A A 100 7.7 VSD Crss 5 5.05 TJ=125C gFS Units V 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=24V, VGS=0V IDSS IS Typ 0.72 m m S 1 V 110 A 1320 pF 533 pF 154 pF 0.95 25.5 nC 13.3 nC 3.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 6.7 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.5, RGEN=3 28 ns 22.2 ns 20.7 ns trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/s 30.7 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s 21.8 ns nC 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOB420, AOB420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 5.0V 50 4.0V 50 40 30 30 3.5V 20 25C 20 10 10 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 10 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 4.5 Normalized On-Resistance 1.8 9 RDS(ON) (m) 125C ID(A) ID (A) 40 VDS=5V VGS=4.5V ID=30A 1.6 8 VGS=10V 1.4 7 6 VGS=4.5V 1.2 VGS=10V 5 1 4 0 10 20 30 40 50 60 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 100 125 150 175 1.0E+02 20 1.0E+01 16 ID=30A 12 125C 1.0E-01 25C 1.0E-02 1.0E-03 25C 8 125C 1.0E+00 IS (A) RDS(ON) (m) 75 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E-04 1.0E-05 4 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOB420, AOB420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=15V ID=30A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1600 1200 Coss 800 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 30 0 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10s 1ms 10ms 0.1s 10 1s TJ(Max)=150C TA=25C 1 10s 1 40 20 0 0.01 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 60 DC 0.1 0.1 30 TJ(Max)=150C TA=25C 80 100s Power (W) 100 ID (Amps) Crss 400 0 ZJA Normalized Transient Thermal Resistance Ciss 1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOB420, AOB420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L ID BV - V DD 20 0 0.00001 0.001 0.01 60 40 20 100 80 60 40 20 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note B) 120 Current rating ID(A) 80 0 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0 100 175 175 Document No. Version ALPHA & OMEGA Title PD-00081 rev C AOB420 Marking Description SEMICONDUCTOR, LTD. D2PAK PACKAGE MARKING DESCRIPTION B420 Standard product NOTE: LOGO B420 F&A Y W LT B420 Green product - AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE PART NO. DESCRIPTION Standard product AOB420L Green product AOB420 CODE B420 B420 Rev. A ALPHA & OMEGA SEMICONDUCTOR, LTD. TO-263 (D2PAK) Tape and Reel Data TO-263 (D2PAK) Carrier Tape FEEDING DIRECTION TO-263 (D2PAK) Reel TO-263 (D2PAK) Leader / Trailer & Orientation