Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Ma
x
8.1 12
33 40
RθJL 1 1.5
A
Repetitive avalanche energy L=0.1mH C120 mJ
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
°C/W
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
Power Dissipation B
TC=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
110
65
200
Avalanche Current C30
Power Dissipation A
TA=25°C PDSM
Continuous Drain
Current B,G
Maximum UnitsParameter
TC=25°C G
TC=100°C B
30
W
Junction and Storage Temperature Range
A
PD
°C
100
50
-55 to 175
TC=100°C
ID
3.1 W
TA=70°C 2
AOB420, AOB420L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Oct 2004
Features
VDS (V) = 30V
ID = 110A
RDS(ON) < 6.5mΩ (VGS = 10V)
RDS(ON) < 10.0mΩ (VGS = 4.5V)
General Description
The AOB420 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
AOB420L (Green Product) is offered in a Lead Free
package.
G
D
S
G D S
T
O-263
D2-PAK
T
op View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1.5 2.15 2.5 V
ID(ON) 110 A
5.05 6.5
TJ=125°C 7.7 11
8.2 10 m
Ω
gFS 60 S
VSD 0.72 1 V
IS110 A
Ciss 1320 pF
Coss 533 pF
Crss 154 pF
Rg0.95 Ω
Qg(10V) 25.5 nC
Qg(4.5V) 13.3 nC
Qgs 3.2 nC
Qgd 6.7 nC
tD(on) 7.7 ns
tr28 ns
tD(off) 22.2 ns
tf20.7 ns
trr 30.7 ns
Qrr 21.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=30A
Reverse Transfer Capacitance
IF=30A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
mΩ
VGS=4.5V, ID=30A
IS=1A,VGS=0V
VDS=5V, ID=30A
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.5Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=30A
Total Gate Charge
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The Power
dissipation PDSM is based on steady-state R
θJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R
θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3V
3.5V
10V
4.0V
5.0V
0
10
20
30
40
50
60
1.5 2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
4
5
6
7
8
9
10
0 102030405060
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
4
8
12
16
20
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
V
GS
=4.5V
V
GS
=10V
ID=30A
25°C
125°C
ID=30A
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0 5 10 15 20 25 30
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
400
800
1200
1600
2000
2400
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
20
40
60
80
100
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJA Normalized Transient
Thermal Resistance
Coss
Cr
0.1
1
10
100
1000
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=30A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin
g
le pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
AOB420, AOB420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
120
0.00001 0.0001 0.001 0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
ID(A), Peak Avalanche Current
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TCASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
TA=25°C
DD
D
A
VBV
IL
t
−
⋅
=
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TCASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating ID(A)
Alpha & Omega Semiconductor, Ltd.
D2PAK PACKAGE MARKING DESCRIPTION
B 4 2 0
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
Rev. A
AOB420 Marking Description
Version
Document No.
Title
rev C
PD-00081
B 4 2 0
B420
Green product
Standard product
AOB420L
DESCRIPTIONPART NO. B420
AOB420
CODE
Standard product Green product
NOTE:
LOGO - AOS LOGO
B420 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE
TO-263 (D2PAK)
FEEDING DIRECTION
TO-263 (D2PAK) Carrier Tape
TO-263 (D2PAK) Reel
TO-263 (D2PAK)
Leader / Trailer
& Orientation
ALPHA & OMEGA
SEMICONDUCTOR, LTD.Tape and Reel Data