Ka-Band High Power Reflective SPDT PIN Switch
26 - 40 GHz
Rev. V5
MASW-010646
1
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0003247
1
Features
Broadband Performance, 26 to 40 GHz
Low Loss: 0.6 dB
High Isolation: 32 dB
Up to 13 W CW Power, +85°C
Die with G-S-G RF Pads and DC Bias Pads
Includes DC Blocks and RF Bias Networks
Description and Applications
The MASW-010646 is a high power, broadband,
reflective, high linearity, SPDT switch. This switch
was developed for KaBand applications that
require up to 13 W of power handling while
maintaining low insertion loss and high isolation.
The SPDT MMIC utilizes MACOM’s proven AlGaAs
PIN diode technology. The switch is fully passivated
with silicon nitride and has an added polymer layer
for scratch protection. The protective coating
prevents damage to the junction and the anode
air-bridge during handling and assembly. The die
has backside metallization to facilitate an epoxy die
attach process.
Pin Configuration:
(Back Metal is RF, DC, and Thermal Ground)
Pin Function
1 RFCOMMON
2 BIAS 1
3 RF1
4 RF2
5 BIAS 2
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Ordering Information1
Part Number Package
MASW-010646-13940G Die in Gel Pack
MASW-010646-13940W Die in Waffle Pack
1. Die quantity varies.
Functional Diagram
RF2
Bias1Bias2
3
1
4
5 2
RF1
L
L
C C
C C C C SW1 SW2
RFCOMMON
Ka-Band High Power Reflective SPDT PIN Switch
26 - 40 GHz
Rev. V5
MASW-010646
2
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0003247
2
Electrical Specifications:
Freq. = 28 - 38 GHz, TA = +25°C, IF2 = +25 mA, VR3 = -15 V, Z0 = 50 Ω
2. Forward bias current (IF) is set using external bias resistors (RBIAS) placed at pins Bias1 and Bias2, where RBIAS = (VCC - 1.32 V) / IF.
3. Reverse bias voltage should be determined based on working conditions. For example, -25 V @ 41.2 dBm input power. For lower power
applications, a less negative voltage can be used. R. Caverly and G. Hiller, ―Establishing the Minimum Reverse Bias for a PIN Diode in a
High Power Switch,‖ IEEE Transactions on Microwave Theory and Techniques, Vol.38, No.12, December 1990.
4. Isolation defined with 1 port in low loss state.
Absolute Maximum Ratings5,6
Parameter Absolute Maximum
Reverse Bias Voltage -50 V
Forward Bias Current 40 mA
CW Incident Power 43 dBm @ 85°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near these
survivability limits.
RFCOMMOM Path Bias 1 Bias 2
RF1 Insertion Loss
RF2 Isolation -15 V 25 mA
RF2 Insertion Loss
RF1 Isolation 25 mA -15 V
Truth Table
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss
(RFCOMMON to RFx ON state)
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB
0.60
0.60
0.60
0.60
0.70
0.90
0.90
0.90
Isolation
(RFCOMMON to RFx OFF state)4
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB
29
33
35
34
35
39
41
42
Return Loss
(RFCOMMON)
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB
16
18
16
16
16
Return Loss
(RFx ON state)
26 GHz
28 GHz
35 GHz
38 GHz
40 GHz
dB
16
18
16
16
16
CW Power Handling (ON state)3 -25 V, +85°C dBm 41.2
Switching Speed
TON / TOFF
TRISE / TFALL
50% DC to 90% RF / 50% DC to 10% RF
10% to 90% RF / 90% to 10% RF
ns
25 / 23
9 / 9
Reverse Bias Voltage3 V -32 -15 -5
Reverse Bias Current3 -15 V nA 25
Ka-Band High Power Reflective SPDT PIN Switch
26 - 40 GHz
Rev. V5
MASW-010646
3
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0003247
3
Typical Performance: TA = +25°C, +25 mA, -15 V, Z0 = 50 Ω
RFCOMMON Return Loss ((On State)
Insertion Loss (On State) Isolation (Off State)
-2.0
-1.5
-1.0
-0.5
0.0
20 24 28 32 36 40
Frequency (GHz)
-25
-20
-15
-10
-5
0
20 24 28 32 36 40
Frequency (GHz)
-25
-20
-15
-10
-5
0
20 24 28 32 36 40
Frequency (GHz)
-50
-40
-30
-20
-10
0
20 24 28 32 36 40
Frequency (GHz)
RF1, 2 Return Loss (On State)
Ka-Band High Power Reflective SPDT PIN Switch
26 - 40 GHz
Rev. V5
MASW-010646
4
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0003247
4
Die Outline
Dimensions indicated in μm.
Die Thickness : 100 μm
RF Pads (1, 3 & 4) are 100 x 150 μm.
DC Bias Pads (2 & 5) are 100 x 100 μm.
Meets JEDEC moisture sensitivity level 1 requirements.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM class 1A
devices.
Ka-Band High Power Reflective SPDT PIN Switch
26 - 40 GHz
Rev. V5
MASW-010646
5
5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0003247
5
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