De gpeab4i42 oonsi4y 5 44 _ 7964142 SAMSUNG. SEMICONDUCTOR 1 ING IRF450/451/452/453 98D 05144 D F873 = NCHANNEL ~ POWER MOSFETS FEATURES Low Rpsjon) at high voltage Fast switching times Low input capacitance TO-3 package (High voltage) PRODUCT SUMMARY Extended safe operating area Improved high temperature reliability Improved inductive ruggedness - Excellent high voltage stability Rugged polysilicon gate cell structure TO-3 Part Number Vos Rosjon) lp oD IRF250 500V 0.49 13A IRF251 450V 0.40 13A td x G IRF252 500V 0.69 142A 1 a i) IRF253 . 450V 0.59 12A MAXIMUM RATINGS Characteristic Symbol! IRF450 IRF451 IRF452 IRF453 Unit Drain-Source Voltage (1) . Voss 500 450 500 450 Vde Drain-Gate Voltage (Ras=1.0M2)(1) Voer 500 450 500 450 Vde i Gate-Source Voltage Ves +20 Vde Continuous Drain Current To=25C lo 13 13 12 12 Adc Continuous Drain Current Tc=100C lo 8.0 8.0 7.0 7.0 Adc F Drain CurrentPulsed (3) lom 52 52 48 48 Ade Gate CurrentPulsed lam 1.56 Adc Total Power Dissipation @ Tc=25C Pp 150 Watts Derate above 25C 1.2 wic Operating and Storage T: - 16 I Junction Temperature Range Ts, Tstg 55 to 150 c Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5 seconds Tt 300 c Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300Qus, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ce SAMSUNG SEMICONDUCTOR 143 | | t wd | t IMICONDUGTOR INC 980 05145 0 7-39-73 Bet pS A ttt stent AMCHANNEL - IRF450/451/4521453 : POWER MOSFETS 98 DEB vaeuuue ooosius 7 7 ELECTRICAL CHARACTERISTICS: (To= 25C unless otherwise specified) Characteristic . Symbol| Type |Min| Typ | Max (Units Test Conditions us IRF460 . IRF452 500; _ Vv |lVas=O0V Drain-Source Breakdown. BVpss |- Voltage | , IRFA51 | 50 V |ip=250pA ; IRF453 7 | preset Gate Threshold Voltage Vesin | ALL | 2.0); 4.0 VlVos=Ves, 'Ip= 250A Fr Gate-Source Leakage Forward] tess | ALL | | | 100] nA |Vas=20V Gate-Source Leakage Reverse} less ALL | | |-100!] nA |Ves=-20V Zero Gate Voltage | toss ALL -|- 250 | vA |Vos=Max. Rating, Vas=OV Drain Current | = | 1000] pA |Vos=Max. RatingX0.8, Vas=OV, To= 125C] . IRF450 f 18} | ]| A : On-State Drain-Source IRF451 _ lofon) Vos>!p(on) XRosion) max.. Vag= 10V Current (2) IRF452 . . IRFas3| =} | | A . IRF450 |0.38| 0.4 o . Static Drain-Source On-State | p IRF451 Vos=10V, Ip=7.0A . DS(on) as= s lo=7. Resistanca (2) IRF452 . a inFas3| | &4 | 0-5 , Forward Transconductance (2}/ gis | ALL {6.0{10.8/ | & |Vos>loien)%Rosicn) max. [b= 7.0A Input Capacitance Ciss ALL | {2850/3000 pF Output Capacitance ' Coss ALL | | 350 | 600 | pF Ves=OV, Vos=25V, f=1.0MHz Reverse Transfer Capacitance] Cres | ALL | | 160]-200 | pF , Tum-On Delay Time taion) | ALL | | | 35 j ns Rise Time . tr ALL | j| | 50 | ns Vop=0.5BVoss, ip=7.0A, Zo=4.7 a 7 - (MOSFET switching times are essentially Furn-Off Delay Time taoty | ALL | | | 150 | ns lindependent of operating temperature.) Fall Time _ tt ALL | |] 70 ns Total Gate Charge . ; (Gate-Source Plus Gate-Drain) Qo ALL | | 77 | 120 | nC iveg=10V, Ip=16A, Vos=0.8 Max. Rating - x (Gate charge is essentially independent of Gate-Source Charge Qos |: ALL | | 41] ~ | NC |onerating temperature. See Fig. 8 page 21 Gate-Drain ("Miller") Charge Qga ALL || 66] nc THERMAL RESISTANCE Junction-to-Case Rinsc ALL | | | 0.83 | K/W Case-to-Sink Rincs ALL | | 0.1 | K/W [Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL |]| 30 | K/W |Free Air Operation Notes: (1) Ty=25C to 150C . (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3} Repetitive rating: Pulse width limited by max. junction temperature G58 sawsune SEMICONDUCTOR 14444 DE 7864142 SAMSUNG SEMICONDUCTOR ING 98D 05146 Dp T-34-13 PAbYI42 goostye y Pee eT GH ANNEL IRF450/451 14521453 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS POWER MOSFETS - Characteristic Symbol} Type |Min| Typ | Max [Units Test Conditions / Re450/; | fag | a, : Continuous Source Current 1s IRF451 Diod . (Body Diode) Ieeaes} | ~ | 12 | A [Modified MOSFET symbol |- 0 howing the integral G IRF450} | _ | so | aq [reverse P-N junction rectifier S Pulse Source Current isu IRF451 | (Body Diode) (3) IRF452}_ | | ag | a IRF453 os heaes| | | 14 | Vv [tc=26C, le=13A, Ves=0V Diode Forward Voltage (2) Vsp IRF452 . . ; _ tinFas3} oT 1.3 Vo /Te=25C, Ils=12A, Vas= OV |Reverse Recovery Time tr ALL -| [1300]; ns |Ty=150C, tr=13A, dip/dt= 100A/ps Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% - (3) Repetitive rating: Pulse width limited by max. junction temperature 20 80,4 Pulse Test a 15 z x a & & <, < Ee z wg 10 z g & = o 3 2 z z = Pd 6 a e 5 r o 50 100 160 200 250 = 300 1 2 a 4 5 6 7 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics _ Typical Transfer Characteristics @ 2 = 2 = = < 5 g g & 3 3 z z < = to 5 5 ss. Ss o 1 2 3 4 5 ore e 5 10 20 50 100 200 500 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) . Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area Ge samsunc SEMICONDUCTOR 145 it i7964142 SAMSUNG SEMICONDUCTOR IN g 98005147 0 T+B4-19: 7AbNLu2 Coosa? og ff == "N-CHANNEL - z wi a : ge! F - 4 -w> > ec Be - a . / Eg ga ' NW =o . z = al eq t= 22 |__ - . 2 F 4 Duty Factor B= fe Per Unit Base=Rne=0 83 Deg CW Ta Te=Pous Zeac tH) , 10 5 104 2 5 2 5 10% 2 5 10 2 5 1 2 8 10 It, SQUARE WAVE PULSE OURATION (SECONDS} | Maximum Effective Transient Thermal impedance Junction-to-Case Vs. Pulse Duration 20 @ 4 8 16 & a 2 g Bo 8 # Zz 12 < 3 B z a << z 1 = fi gu 2 01 o 4 0 05 1 1.6 2 25 4a . Ip, DRAIN CURRENT (AMPERES) Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) \ Typical Transcounductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage 2.5 8 < 8 3 -2 20 > ny . z on 3 8 5a SG 1.05 ae 1.5 <N oS as Sa wd 3: SE Sa 4 oO 32 22 10 = z e z 2 co z 3 . 5 06 d s o .75 078 5 0 40 80 120 160 40 0 80 420 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normatized On-Resistance Vs. Temperature eae aga SAMSUNG SEMICONDUCTOR 146 wa . . | . . ~ Baie17964142 SAMSUNG 5 EMTCONDUGTOR INC 98D 05148 0 T-34-13 8 dE Beseyiy2 O005148 2 i beatae te ALOR ANNE 7 IRF450/451/452/453 . POWER MOSFETS 25 . E - So 20 = g & 5 w S 15 f = W Vos" 250V. E g 3 a 3 3 3 # < 4, 2 0 28 56 84 112 140 . Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs, Gate-To-Source Voltage 6 g = x= g aw (07 12 a 2 @ % is ao = #2 os < z Ee 3 2 we a 2 5 5 3 08 8 6 } < 5 5 < $ oO 3 : Pesos oF = 2 Ops DURATION ANITIAL T, (HEATING g . OF 2 Ops PULSE {S MINIMAL} = 03 0 10 20 30 40 50 28 50 75 u : . tp, DRAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (*C) Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature Pp, POWER DISSIPATION (WATTS) 3 Q 20 40 60 a0 100 120 140 160 Tx, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve Ee samsunc SEMICONDUCTOR , 147