SFH 409
GaAs-IR-Lumineszenzdiode
GaAs Infrare d Emitter
2001-02-22 1
Wesentliche Merkmale
GaAs-LED mit sehr hohem Wirkungsgrad
Hohe Zuverlässigkeit
Hohe Impulsbelastbarkeit
Gute spektrale Anpassung an
Si-Fotoempfänger
Gehäusegleich mit SFH 309, SFH 487
Anwendungen
IR-Fernsteuerungen von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
Lichtschranken bis 500 kHz
Münzzähler
Sensorik
Diskrete Optokoppler
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 409 Q62702-P860 3-mm-LED-Gehäuse (T 1), grau eingefärbt, Anschlüsse
im 2.54-mm-Raster (1/10’’),
Kathodenkennzeichnung: kürzerer Anschluß
3 mm LED package (T 1), grey-colored epoxy resin,
solder tabs lead spacing 2.54 mm (1/10’’),
cathode marking: short lead
SFH 409-2 Q62702-P1002
Features
Very highly efficient GaAs-LED
High reliability
High pulse handling capability
Good spectral match to silicon photodetectors
Same package as SFH 309, SFH 487
Applications
IR remote control for hifi and TV sets, video
tape recorders, dimmers
Light-reflection switches (max. 500 kHz)
Coin counters
Sensor technology
Discrete optocouplers
2001-02-22 2
SFH 409
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg 40 + 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF100 mA
Stoßstrom, τ 10 µs, D = 0
Surge current IFSM 3A
Verlustleistung
Power dissipation Ptot 165 mW
Wärmewiderstand
Thermal resistance RthJA 450 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 55 nm
Abstrahlwinkel
Half angle ϕ± 20 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L×B
L×W0.3 ×0.3 mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip surface to lens top H2.6 mm
Kapazität, VR = 0 V
Capacitance Co25 pF
SFH 409
2001-02-22 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50
Switching tim es, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50
tr, tf0.5 µs
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.30 ( 1.5)
1.9 ( 2.5) V
V
Sperrstrom,
Re verse current, VR = 5 V IR0.01 ( 1) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe15 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI 0.55 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV 1.5 mV/K
Temperaturkoeffizient von λpeak, IF = 100 mA
Temperature coefficient of λpeak, IF = 100 mA TCλ+ 0.3 nm/K
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel = 0.01 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
SFH 409 SFH 409-11)
1) Nur auf Anfrage lieferbar.
1) Availab le only on request.
SFH 409-2 SFH 409-3
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsIe
Ie typ.
6.3
6.3 12.5
75 >10
120 16 32
mW/sr
mW/sr
Kennwerte (TA = 25 °C)
Characteristics (contd)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 409
2001-02-22 4
Relati ve Sp ectral Emission
Irel = f (λ)
Forward Cu rrent
IF = f (VF), Single pu lse , tp = 20 µs
Radi ati on C harac ter ist ics Ιrel = f (ϕ)
OHR01938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHR01041
F
F
I
1
1
10
0
10
-1
10
10
-2
A
1.5 2 2.5 3 3.5 4 V 4.5
max.
typ.
OHR01887
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
Ι
OHR00864
F
-1
10 10
-2 -1
10
0
10 A 10
1
10
0
mA)(100
e
Ι
e
Ι
10
1
τ
OHR00865
-5
10
10
2
I
F
10
3
10
4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
T
I
F
T
D
=
5
mA
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10s
D
=
ττ
Max. Permissible Forward Current
IF = f (TA)
OHR00883
0
F
I
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
SFH 409
2001-02-22 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
6.3 (0.248)
5.9 (0.232)
4.1 (0.161)
3.9 (0.154)
5.2 (0.205)
4.5 (0.177)
Chip position
GEXY6250
Cathode
Anode (SFH 487, SFH 4301)
(SFH 409, SFH 4332)
4.0 (0.157)
3.6 (0.142)
0.4 (0.016)
0.7 (0.028)
0.8 (0.031)
0.4 (0.016)
0.4 (0.016)
Area not flat
1.2 (0.047)
1.8 (0.071)
29 (1.142)
27 (1.063)
ø3.1 (0.122)
ø2.9 (0.114)
(3.5 (0.138))
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing