File Number 1582 Standard Power MOSFETs IRF830, IRF831, IRF832, IRF8&33 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE Oo 4.0A and 4.5A, 450V-500V ps(On) = 1.50 and 2.09 Features: @ SOA is power-dissipation limited sO @ Nanosecond switching speeds @ Linear transfer characteristics B High input impedance s @ Majority carrier device 8208-33741 TERMINAL DIAGRAM The IRF830, IRF831, IRF832 and !RF833 are n-channel enhancement-mode silicon-gate power field- TERMINAL DESIGNATION effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay SOURCE drivers, and drivers for high-power bipolar switching tran- prawn _ ol Ld onain sistors requiring high speed and low gate-drive power. (FLANGE) C) et These types can be operated directly from integrated __ circuits. ted j TOP View GATE The IAF-types are supplied in the JEDEC TO-220AB plastic e2cs-395z0 package. JEDEC TO-220AB Absolute Maximum Ratings Parameter tRF830 IRF831 tRF832 IRF833 Units Vos. Drain - Source Voltage @ 500 450 500 450 Vv YogR. Orain - Gate Voltage (Ags = 20 KN) oO 500 450 500 450 v Ip @Te = 25C Continuous Drain Current 4S 45 40 40 A ip @ Te = 100C Continuous Orain Current 3.0 3.0 2.6 2.5 A | 'om_ Pulsed Drain Current @ 18. 18 16 16 A Vv Gate - Source Voltage +20 Vv Pp @ To = 25C Max. Power Dissipation 75 (See Fig. 14) w Linear Derating Factor 0.6 (See Fig. 14} weet iM Inductive Current, Clamped. (See Fig. 15 and 16) L = 100gH A 18 l 18 l 16 l 16 By Se ge 380180 Lead Temperature 300 (0.063 in. (1.6mm) from case for 108} c 3-199Standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. Units * Test Conditions BVoss._ Orain - Source Breakdown Voltage IRF830 _ _ = inra3z | 500 V Ves = OV IRF831 inrag3 | 450 | - | ~ v 'p = 280A Vgsithy Gate Threshold Voltage ALL 2.0 = 4.0 Vv Vos * gs: 'p = 250xA ess Gate-Source Leakage Forward ALL _ - 500 nA Vos = 20V less Gate-Source Leakage Reverse ALL _ |-500 nA __ Vas = -20V Ipss Zero Gate Voltage Drain Current ALL = - 250 BA Vos = Max. Rating, Vgg = OV u = ee Vpg = Max. Rating x 0.8, Vag = OV, Te = 125C (Dian) On-State Drain Current ) _ inFB30 | ye _ A {RF831 8 Vos? 'piom * Boston) max.: Yes * 10V wre32 [4 | _ _ A IRF833 RpSion) Static Drain-Source On-State IRF830 Resistance IRFB31 13 15 a VGg = 10V, Ip = 2.54 IRFB32 _ 15 20 2 (RF833 . Sts Forward Transconductance @) ALL 2.5 [3.25] Sia) Vos? 'pien * Rpsion) max. 'p = 2-58 Ciss Input Capacitance ALL = 600 pF Veg = OV, Vpg = 28V/f = 1.0 MHz Coss Output Capacitance ALL = 100 oF See Fig. 10 Crss Reverse Transfer Capacitance ALL = 30 oF Tgion) _Turn-On Delay Time ALL ~ = 30 ns Vpp = 225V, Ip = 2.58.2, = 152 t Rise Time ALL = 30 as See Fig. 17 tglatt, _Turn-Off Delay Time ALL _ = 55 ns (MOSFET switching times are essentially tf Fall Time ALL _ _ 30 ns independent of operating temperature.) ay Total Gate Charge _ Veg * 10V. Ip = 6.04. Vag = 0.8 Max. Rating. {Gate-Source Plus Gate-Drain) ALL 22 30 ne See Fig. 18 for test circuit. (Gate charge is essentially Qos Gate-Source Charge ALL _ "1 7 nc independent of operating temperature.} Ogu Gate-Drain ("Miller") Charge ALL > " 17 nc Lp Internal Drain Inductance ~ 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL ind > 45 = oH Measured from the drain lead, 6mm (0.25 o in.} from package to center of die. io Ls Internal Source Inductance ALL ~ 7.5 - oH Maassured from the source lead, 6mm 6 is {0.25 in.) from package to source bonding pad. s Thermal Resistance Rhye _ Junction-to-Case ALL = J 167 | -cw Rincs _Case-to-Sink ALL ~ 1.0 = ecw Mounting surface flat, smooth, and greased. Renya __Junction-to-Ambient ALL ~ - 80 c/cw Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF830 _ _ 45 A Modified MOSFET symbol (Body Diode) IRF831 * showing the integral IRF832 reverse P-N junction rectifier. o tress | ~ | ~ | * | A ism Pulse Source Current IRF830 _ _ 18 A (Body Diode} @ IRF83t G iRFE32 wapass | ~ | ~ | | A Vso Diode Forward Voltage @ IRFB30 _ _ _ iRFB3t ~ - 416 v Te = 28C, Ig = 4.54, Vag = OV IRFB32 intsaa | - | 15 v To = 26C, Ig = 4.0A, Vgg = OV ter Reverse Recovery Time ALL = 800 - ns Ty = 150C, tp = 4.54, dic/dt = 100 Alps Cra Reverse Recovered Charge ALL = 4.6 - aC Ty = 150C, Ip = 4.5A, dip/dt = 100 Ajus ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible, Turn-on speed is substantially controlied by Lg + Lp. @Ty = 25C to 150C. 3-200 @ Pulse Test: Pulse width < 300ys, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5).ig, ORAIN CURRENT (AMPERES) Standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 BO us Vos > 'pton} * Apsion) max. ' Ty > -550C Ip, DRAIN CURRENT (AMPERES) a 100 200 300 0 1 2 3 4 5 6 7 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vgs. GATE-T0-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics Ip, QRAIN CURRENT (AMPERES) N e = = a 2 4 =~ FE 10 we >5 BS os oe we Su oz Sz 02 8 sa 2 01 za od =z 0.05 ou 2=z 2 BS 002 2 2 wv 001 10-5 IS LIMITED Ip, ORAIN CURRENT (AMPERES) Te = 25C Ty = 150C MAX. = 1.67 C PULSE 0 2 4 6 8 19 102 5 Wm 2 so 100 200 800 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area Lehn fo't2 SINGLE PULSE | pury racror.o= tb THERMAL IMPEDANCE} . OV CTOR, ?: 2. PER UNIT BASE * Rac * 1.67 DEG. CW. 3. Ty - Te = Pom 2enacl")- 2 5 wt 2 5 3? 5 2 2 5S wl 2 5 10 2 5 10 11, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Mi Effective Ti ient Thermal di: J ion-to-Case Vs. Pulse Duration 3-201Standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 3 % on y= 1500C Ty= 1259C . 6 fs, TRANSCONOUCTANCE (SIEMENS) lpr, REVERSE OAAIN CURRENT (AMPERES) Vos > !p(on) * 2 ha Ty = 2806 1.0 Q 1 2 3 4 5 0 1 2 3 4 Ip. ORAIN CURRENT (AMPERES) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 22 1.25 oo 11S, (NORMALIZED) = rc 0.95 Ros(on}, ORAIN-TO-SOURCE ON RESISTANCE 2 o 0.85 BVogs, ORAIN-TO-SOURCE BREAKOOWN VOLTAGE (NORMALIZED) 075 02 40 0 40 80 120 160 -40 o 40 80 120 Ty, JUNCTION TEMPERATURE (C} Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normatized On-Resistance Vs. Temperature 2000 Ves 70 t= 1MHz +600 Cig = Cys + Cog, Cos SHORTED Crap * Cog Cu Cod Coss = om Cie Taye Oyg 1200 = Cis Coe C, CAPACITANCE (pF) Vos. GATE-TO-SOURCE VOLTAGE {VOLTS} 400 ip "6A FOR TEST CIRCUIT FIGURE 18 0 10 20 30 40 50 0 8 16 a 32 40 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qg. TOTAL GATE CHARGE (aC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 3-202Rosion) MEASURED WITH CURRENT PULSE OF _ | 2.0us DURATION. INITIAL Ty = 259C. (HEATING BL EFFECT OF 2.0 us PULSE IS MINIMAL.) & a 2 4 5 Ves= ovy a = Veg = 20 z 33 2 > 3 8 e 2 < 5 2 Al 3 1 g a = 1 a 5 0 16 . 20 2 Ip, DRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 80 40 Pp, POWER DISSIPATION {WATTS) Qa 20 40 Ip, DRAIN CURRENT (AMPERES) Standard Power MOSFETs IRF830, IRF831, IRF832, IRF833 IRF830, 831 0 25 50 WH 100 125 180 Te. CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve VARY ty TO OBTAIN REQUIRED PEAK 1, Fig. 15 Clamped Inductive Test Circuit E, = 0.58Vpgg our Se Vg 7 0.75BVpss Voo > 228V PRE V kHz Vo TO SCOPE Fig. 17 Switching Time Test Circuit Fig. 16 Clamped inductive Waveforms 5 Vos (ISOLATED SUPPLY) CURRENT REGULATOR SAME TYPE Vv a O.2ut BATTERY i -Yos iD CURRENT SHUNT CURRENT = SHUNT Fig. 18 Gate Charge Test Circuit 3-203