G*SiC(R) Technology XBright(R) Plus LEDs Cxxx-XB290-S0100-A-Plus Features * Applications XBright(R) Plus Performance - 15.0 mW min Blue * Outdoor LED Video Displays * Automotive Dashboard Lighting * Single Wire Bond Structure * Class II ESD Rating * White LEDs * Backlighting Description Cree's XBright(R) Plus LEDs are the next generation of solid state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price performance for high intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency, and require only a single wire bond connection. Cree's XBright(R) Plus chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as outdoor full motion LED video signs, automotive lighting and white LEDs, yet can also be used in high volume applications such as LCD backlighting. Cxxx-XB290-S0100-A-Plus Chip Diagram Bottom View Topside View G*SiC(R) LED 300 x 300 m Top Area 200 x 200 m Bond Pad 96 m Diameter CPR3BT Rev. A (c) Cree, Inc. 2003 All Rights Reserved. Die Cross Section Cathode (-) Junction Area 248 x 248 m h = 250 m Backside Metallization 210 x 210 m SiC Substrate InGaN Anode (+) G*SiC(R) Technology XBright(R) Plus LEDs Cxxx-XB290-S0100-A-Plus Maximum Ratings at TA = 25C Notes 1&3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Cxxx-XB290-S0100-A-Plus 30mA 100mA 125C 5V -20C to +80C -30C to +100C 1000V Class 2 Typical Electrical/Optical Characteristics at TA = 25C, If = 20mA Note 3 Sorted Kit Part number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), A] Full Width Half Max (D, nm) Dominant Wavelength Radiant Flux Optical Rise Time (, ns) Typ Max Max Typ C460-XB290-S0100-A 3.6 4.0 10 25 See Bin Table See Bin Table 30 C470-XB290-S0100-A 3.6 4.0 10 25 See Bin Table See Bin Table 30 Mechanical Specifications Note 4 Description P-N Junction Area (m) Top Area (m) Bottom Area (Substrate) (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Au/Sn Back Contact Metal Area (m) Au/Sn Back Contact Metal Thickness (m) Typ Cxxx-XB290-S0100-A-Plus Dimension 248 x 248 200 x 200 300 x 300 250 96 1.2 210 x 210 1.7 Tolerance 25 25 25 25 -5, +15 0.5 25 0.3 Notes: 1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G *SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). See Cree XBright(R) Applications Note for more assembly process information. 2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD. 3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages with Hysol OS4000 epoxy. Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E. 4) All Products conform to the listed mechanical specifications within the tolerances shown. CPR3BT Rev. A (c) Cree, Inc. 2003 All Rights Reserved. G*SiC(R) Technology XBright(R) Plus LEDs Cxxx-XB290-S0100-A-Plus Notes (continued): 5) Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282C. See XBright(R) Applications Note for detailed packaging recommendations. 6) Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. See Cree XBright(R) Applications Note for more information. Standard Bins for XBright(R) Plus: Radiant Flux Radiant Flux LED chips are sorted to the radiant flux and dominant wavelength bins. A sorted die sheet contains die from only one bin. Sorted die kit (Cxxx-XB290-S0100-A-Plus) orders may be filled with any or all bins (Cxxx-XB290-01xx-A) contained in the kit. C460XB290-S0100-A-Plus C460XB290-0105-A C460XB290-0106-A C460XB290-0107-A C460XB290-0108-A 15.0mW 455nm 457.5nm 460nm 462.5nm 465nm Dominant Wavelength C470XB290-S0100-A-Plus C470XB290-0105-A C470XB290-0106-A C470XB290-0107-A C470XB290-0108-A 15.0mW 465nm 467.5nm 470nm 472.5nm 475nm Dominant Wavelength CPR3BT Rev. A (c) Cree, Inc. 2003 All Rights Reserved. G*SiC(R) Technology XBright(R) Plus LEDs Cxxx-XB290-S0100-A-Plus Characteristic Curves: These are representative measurements for blue XBright(R) products. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current 16.0 Forward Current vs Forward Voltage 14.0 30 12.0 10.0 Shift (nm) 25 If (mA) 20 15 8.0 6.0 4.0 2.0 0.0 10 -2.0 5 -4.0 0 5 10 15 20 25 30 If (mA) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Vf (V) Relative Intensity vs Peak Wavelength Relative Intensity vs Forward Current 100 140.0 120.0 80 Relative Intensity (%) 100.0 % 80.0 60.0 60 40 40.0 20.0 20 0.0 0 5 10 15 If (mA) CPR3BT Rev. A (c) Cree, Inc. 2003 All Rights Reserved. 20 25 30 400 500 W avelength (nm ) 600