ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary RDS(on) () ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 V(BR)DSS 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D1 * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package G1 D2 G2 S1 S2 Applications * DC-DC converters * Power management functions * Motor control Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 500 ZXMN6A11DN8TA S1 D1 G1 D1 S2 D2 G2 D2 Pin out - top view Device marking ZXMN 6A11D Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN6A11DN8 Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS 20 V ID 3.2 A Continuous drain current @ VGS= 10V; Tamb=25C(b) @ VGS= 10V; Tamb=70C(b) 2.6 @ VGS= 10V; Tamb=25C(a) 2.5 IDM 13.7 A IS 3.1 A Pulsed source current (body diode)(c) ISM 13.7 A Power dissipation at Tamb =25C(a)(d) PD 1.25 W 10 mW/C 1.8 W 14 mW/C 2.1 W 17 mW/C Tj, Tstg -55 to +150 C Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at Tamb =25C(a)(e) Linear derating factor PD Power dissipation at Tamb =25C(b)(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a)(d) RJA 100 C/W Junction to ambient(a)(e) RJA 70 C/W Junction to ambient(b)(d) RJA 60 C/W Junction to NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN6A11DN8 Typical characteristics Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN6A11DN8 Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 60 V ID= 250A, VGS=0V Zero gate voltage drain current IDSS 1.0 A VDS= 60V, VGS=0V Gate-body leakage IGSS 100 nA VGS=20V, VDS=0V Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) Forward transconductance(*)() gfs Input capacitance 1.0 V ID= 250A, VDS=VGS 0.120 VGS= 10V, ID= 2.5A 0.180 VGS= 4.5V, ID = 2A 4.9 S VDS= 15V, ID= 2.5A Ciss 330 pF Output capacitance Coss 35.2 pF VDS= 40V, VGS=0V f=1MHz Reverse transfer capacitance Crss 17.1 pF Turn-on-delay time td(on) 1.95 ns Rise time tr 3.5 ns Turn-off delay time td(off) 8.2 ns Fall time tf 4.6 ns Gate charge Qg 3.0 nC VDS= 15V, VGS= 5V ID= 2.5A Total gate charge Qg 5.7 nC Gate-source charge Qgs 1.25 nC VDS= 15V, VGS= 10V ID= 2.5A Gate drain charge Qgd 0.86 nC Diode forward voltage(*) VSD 0.85 Reverse recovery time() trr Reverse recovery charge() Qrr Dynamic() Switching () () VDD= 30V, ID= 2.5A RG6.0, VGS= 10V Source-drain diode 0.95 V Tj=25C, IS= 2.8A, VGS=0V 21.5 ns 20.5 nC Tj=25C, IS= 2.5A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN6A11DN8 Typical characteristics Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN6A11DN8 Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 Switching time test circuit 6 www.zetex.com ZXMN6A11DN8 Intentionally left blank Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN6A11DN8 Package outline - SO8 DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 0 8 0 8 E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com