Issue 3 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
Applications
• DC-DC converters
• Power management functions
• Motor control
Ordering information
Device marking
ZXMN
6A11D
V(BR)DSS RDS(on) (⍀)ID (A)
60
0.120 @ VGS= 10V 3.2
0.180 @ VGS= 4.5V 2.6
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A11DN8TA 7 12 500
D2
S2
G2
D1
S1
G1
D1S1
G1
S2
G2
Pin out - top view
D1
D2
D2
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Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Parameter Symbol Limit Unit
Drain-source voltage VDSS 60 V
Gate-source voltage VGS ±20 V
Continuous drain current @ VGS= 10V; Tamb=25°C(b) ID3.2 A
@ VGS= 10V; Tamb=70°C(b) 2.6
@ VGS= 10V; Tamb=25°C(a) 2.5
Pulsed drain current(c) IDM 13.7 A
Continuous source current (body diode)(b) IS3.1 A
Pulsed source current (body diode)(c) ISM 13.7 A
Power dissipation at Tamb =25°C(a)(d) PD1.25 W
Linear derating factor 10 mW/°C
Power dissipation at Tamb =25°C(a)(e) PD1.8 W
Linear derating factor 14 mW/°C
Power dissipation at Tamb =25°C(b)(d) PD2.1 W
Linear derating factor 17 mW/°C
Operating and storage temperature range Tj, Tstg -55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient(a)(d) R⍜JA 100 °C/W
Junction to ambient(a)(e) R⍜JA 70 °C/W
Junction to ambient(b)(d) R⍜JA 60 °C/W
ZXMN6A11DN8
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© Zetex Semiconductors plc 2006
Typical characteristics
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© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V(BR)DSS 60 V ID= 250␮A, VGS=0V
Zero gate voltage drain current IDSS 1.0 ␮AV
DS= 60V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) 1.0 V ID= 250␮A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle ⱕ2%.
RDS(on) 0.120 ⍀VGS= 10V, ID= 2.5A
0.180 ⍀VGS= 4.5V, ID = 2A
Forward transconductance(*)(‡) gfs 4.9 S VDS= 15V, ID= 2.5A
Dynamic(‡)
Input capacitance Ciss 330 pF VDS= 40V, VGS=0V
f=1MHz
Output capacitance Coss 35.2 pF
Reverse transfer capacitance Crss 17.1 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time td(on) 1.95 ns VDD= 30V, ID= 2.5A
RG≅6.0⍀, VGS= 10V
Rise time tr 3.5 ns
Turn-off delay time td(off) 8.2 ns
Fall time tf4.6 ns
Gate charge Qg3.0 nC VDS= 15V, VGS= 5V
ID= 2.5A
Total gate charge Qg5.7 nC VDS= 15V, VGS= 10V
ID= 2.5A
Gate-source charge Qgs 1.25 nC
Gate drain charge Qgd 0.86 nC
Source-drain diode
Diode forward voltage(*) VSD 0.85 0.95 V Tj=25°C, IS= 2.8A,
VGS=0V
Reverse recovery time(‡) trr 21.5 ns Tj=25°C, IS= 2.5A,
di/dt=100A/␮s
Reverse recovery charge(‡) Qrr 20.5 nC
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Typical characteristics
ZXMN6A11DN8
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© Zetex Semiconductors plc 2006
Typical characteristics
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
VGS
VGS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on)
t(on)
td(on) trtr
td(off)
VDS
VCC
RD
RG
VDS
ID
IG
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Intentionally left blank
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© Zetex Semiconductors plc 2006
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package outline - SO8
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
DIM Inches Millimeters DIM Inches Millimeters
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC
A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51
D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20 ⍜0° 8° 0° 8°
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50
L 0.016 0.050 0.40 1.27 - - - - -