Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESD18VF1BL Ultra low capacitance bidirectional ESD protection diode Rev. 1-- 2 September 2013 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits * * * * Ultra low diode capacitance Cd = 0.35 pF High reverse standoff voltage VRWM = 18 V Very small voltage dependency of the capacitance ESD protection up to 10 kV according to IEC 61000-4-2, level 4 3. Applications * NFC antenna protection * Protection of high-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V 0.28 0.35 0.5 pF VRWM reverse standoff voltage - V - 18 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) Simplified outline 1 2 Graphic symbol 1 2 sym045 Transparent top view DFN1006-2 (SOD882) PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package PESD18VF1BL Name Description Version DFN1006-2 leadless ultra small plastic package; 2 terminals SOD882 7. Marking Table 4. Marking codes Type number Marking code PESD18VF1BL WM 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions IPPM peak pulse current tp = 8/20 s; IEC 61000-4-5; IEC 61643-321 Tj junction temperature Tamb ambient temperature -55 150 C Tstg storage temperature -65 150 C [1] Min Max Unit - 1 A - 150 C ESD maximum ratings VESD electrostatic discharge voltage IEC 61000-4-2; contact discharge [1][2] - 10 kV IEC 61000-4-2; air discharge [1][2] - 15 kV MIL-STD-883; human body model; HBM [1] - 10 kV machine model; MM [1] - 400 V [1] Measured from pin 1 to pin 2. [2] Device stressed with ten non-repetitive ESD pulses. PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 2 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 s IPP (%) 90 % 80 e-t 50 % IPP; 20 s 40 10 % 0 0 10 20 30 t tr = 0.7 ns to 1 ns 40 t (s) 30 ns 60 ns Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig 2. ESD pulse waveform according to IEC 61000-4-2 9. Characteristics Table 6. Characteristics Symbol Parameter VRWM reverse standoff voltage IRM reverse leakage current VR = 18 V VCL clamping voltage IPP = 1 A; tp = 8/20 s; IEC 61000-4-5; IEC 61643-321 VBR breakdown voltage IR = 10 mA Cd diode capacitance f = 1 MHz; VR = 0 V Rdyn dynamic resistance Conditions IR = 10 A [1] [2] Min Typ Max Unit - - 18 V - 1 30 nA - - 17 V 19 22 24 V 0.28 0.35 0.5 pF - 0.8 - [1] Measured from pin 1 to pin 2. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.1-2008. PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 3 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode ESD TESTER Rd 450 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 coax 10x ATTENUATOR Cs 50 DUT (DEVICE UNDER TEST) IEC 61000-4-2 network Cs = 150 pF; Rd = 330 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig 3. ESD clamping test setup and waveforms aaa-008158 100 VCL (V) VCL (V) 60 -20 20 -60 -20 -50 Fig 4. aaa-008159 20 0 50 100 150 200 250 t (ns) 300 Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD18VF1BL Product data sheet -100 -50 Fig 5. 0 50 100 150 200 250 t (ns) 300 Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 4 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode IPPM IPP aaa-008157 0.4 Cd (pF) 0.35 0.30 IR IRM -VCL -VBR -VRWM -IRM -IR VRWM VBR VCL 0.25 - 0.20 -20 -10 0 10 + -IPP 20 VR (V) -IPPM 006aab325 f = 1 MHz; VR = 0 V; Tamb = 25 C Fig 6. Diode capacitance as a function of reverse voltage; typical values Fig 7. V-I characteristics for a bidirectional ESD protection diode aaa-009078 25 I (A) 20 15 10 5 0 0 10 20 30 40 VCL (V) tp = 100 ns; Transmission Line Pulse (TLP) Fig 8. Dynamic resistance PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 5 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 10. Application information The device is designed for the protection of one bidirectional data line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both positive and negative with respect to ground. line to be protected ESD protection diode GND aaa-002737 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. Minimize the path length between the device and the protected line. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 6 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 11. Package outline 0.50 0.46 0.62 0.55 2 0.30 0.22 0.65 0.30 0.22 1.02 0.95 1 0.55 0.47 cathode marking on top side (if applicable) Dimensions in mm 03-04-17 Fig 10. Package outline DFN1006-2 (SOD882) 12. Soldering 1.3 0.7 R0.05 (8x) solder lands 0.6 0.7 0.8 (2x) (2x) (2x) 0.9 solder resist solder paste occupied area 0.3 (2x) Dimensions in mm 0.4 (2x) 0.5 (2x) sod882_fr Fig 11. Reflow soldering footprint for DFN1006-2 (SOD882) PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 7 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD18VF1BL v.1 20130902 Product data sheet - - PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 8 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 14. Legal information 14.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 14.2 Definitions Preview -- The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 9 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. 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Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,IC-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE -- are trademarks of NXP B.V. HD Radio andHD Radio logo -- are trademarks of iBiquity Digital Corporation. 15. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 2 September 2013 (c) NXP B.V. 2013. All rights reserved. 10 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 16. Contents 1 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 General description . . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Application information. . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 September 2013 Document identifier: PESD18VF1BL