PESD18VF1BLYL - NXP SEMICONDUCTORS

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1. General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a

DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic

package designed to protect one signal line from the damage caused by ESD and other

transients.

2. Features and benefits

•Ultra low diode capacitance Cd = 0.35 pF

•High reverse standoff voltage VRWM = 18 V

•Very small voltage dependency of the capacitance

•ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

3. Applications

•NFC antenna protection

•Protection of high-speed data lines

4. Quick reference data

5. Pinning information

PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

Rev. 1— 2 September 2013 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Cddiode capacitance f = 1 MHz; VR= 0 V 0.28 0.35 0.5 pF

VRWM reverse standoff

voltage --18V

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K1 cathode (diode 1)

DFN1006-2 (SOD882)

2 K2 cathode (diode 2)

Transparent

top view

sym045

Product data sheet Rev. 1 — 2 September 2013 2 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

6. Ordering information

7. Marking

8. Limiting values

[1] Measured from pin 1 to pin 2.

[2] Device stressed with ten non-repetitive ESD pulses.

Table 3. Ordering information

Type number Package

Name Description Version

PESD18VF1BL DFN1006-2 leadless ultra small plastic package; 2 terminals SOD882

Table 4. Marking codes

Type number Marking code

PESD18VF1BL WM

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

IPPM peak pulse current tp = 8/20 µs; IEC 61000-4-5;

IEC 61643-321 [1] -1A

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

ESD maximum ratings

VESD electrostatic discharge voltage IEC 61000-4-2; contact discharge [1][2] -10kV

IEC 61000-4-2; air discharge [1][2] -15kV

MIL-STD-883; human body model;

HBM [1] -10kV

machine model ; MM [1] - 400 V

Product data sheet Rev. 1 — 2 September 2013 3 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

9. Characteristics

[1] Measured from pin 1 to pin 2.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.1-2008.

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 and IEC 61643-321

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa631

100 %

90 %

30 ns 60 ns

10 %

= 0.7 ns to 1 ns

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff

voltage --18V

IRM reverse leakage

current VR= 18 V - 1 30 nA

VCL clamping voltage IPP =1A; t

p = 8/20 µs; IEC 61000-4-5;

IEC 61643-321 [1] --17V

VBR breakdown voltage IR=10mA 192224V

Cddiode capacitance f = 1 MHz; VR= 0 V 0.28 0.35 0.5 pF

Rdyn dynamic resistance IR = 10 A [2] -0.8-Ω

Product data sheet Rev. 1 — 2 September 2013 4 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

Fig 3. ESD clamping test setup and waveforms

Fig 4. Clamped +8 kV pulse waveform (IEC 61000-4-2

network)

Fig 5. Clamped -8 kV pulse waveform (IEC 61000-4-2

network)

50 Ω

DUT

(DEVICE

UNDER

TEST)

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

Cs = 150 pF; Rd = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10x

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

(kV)

-2

t (ns)

-10 7030

40201005060

unclamped -8 kV ESD pulse waveform

(IEC 61000-4-2 network)

-8

-2

-6

(kV)

-10

t (ns)

-10 7030

-4

40201005060

aaa-003952

t (ns)

-50 50 150 250 3002001000

aaa-008158

100

VCL

(V)

-20

t (ns)

-50 50 150 250 3002001000

aaa-008159

-60

-20

VCL

(V)

-100

Product data sheet Rev. 1 — 2 September 2013 5 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

f = 1 MHz; VR = 0 V; Tamb = 25 °C

Fig 6. Diode capacitance as a function of reverse

voltage; typical values

Fig 7. V-I characteristics for a bidirectional ESD

protection diode

tp = 100 ns; Transmission Line Pulse (TLP)

Fig 8. Dynamic resistance

VR (V)

-20 2010-10 0

aaa-008157

0.30

0.25

0.35

0.4

(pF)

0.20

006aab325

-VCL -VBR -VRWM

VCL

VBR

VRWM

-IRM

IRM

-IR

-IPP

IPP

IPPM

-IPPM

VCL (V)

0403010 20

aaa-009078

(A)

Product data sheet Rev. 1 — 2 September 2013 6 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

10. Application information

The device is designed for the protection of one bidirectional data line from surge pulses

and ESD damage. The device is suitable on lines where the signal polarities are both

positive and negative with respect to ground.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input

terminal or conne cto r as possible.

2. Minimize the path length between the

device and the pr ot ec ted line .

3. Keep parallel signal paths to a

minimum.

4. Avoid running prot ec te d c on d uctors in

parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board

(PCB) conductive loops including

power and ground loops.

6. Minimize the length of the transient

return path to ground.

7. Avoid using shared transient return

paths to a common ground point.

8. Use ground planes whenever

possible. For multilayer PCBs, use

ground vias.

Fig 9. Application diagram

aaa-002737

ESD protection diode

GND

line to be protected

Product data sheet Rev. 1 — 2 September 2013 7 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

11. Package outline

12. Soldering

Fig 10. Package outline DFN1006-2 (SOD882)

03-04-17Dimensions in mm

0.55

0.47

0.65

0.62

0.55

0.50

0.46

cathode marking on top side (if applicable)

1.02

0.95

0.30

0.22

0.30

0.22

Fig 11. Reflow soldering footprint for DFN1006-2 (SOD882)

solder lands

solder resist

occupied area

solder paste

sod882_fr

0.9

0.3

(2×)

R0.05 (8×)

0.6

(2×) 0.7

(2×)

0.4

(2×)

1.3

0.5

(2×)

0.8

(2×)

0.7

Dimensions in mm

Product data sheet Rev. 1 — 2 September 2013 8 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

13. Revision history

Table 7. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PESD18VF1BL v.1 20130902 Product data sheet - -

Product data sheet Rev. 1 — 2 September 2013 9 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

14. Legal information

14.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) de scribed in th is document may have changed since this document w as published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

14.2 Definitions

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subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representations or warranti es as to

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Character istics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

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representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

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the products or of the application or use by customer’s third part y

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 2 September 2013 10 of 11

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

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In the event that customer uses the product for design-in and use in

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Notice: All referenced b rands, produc t names, service names and trademarks

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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

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Corporation.

15. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors PESD18VF1BL

Ultra low capacitance bidirectional ESD protection diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 2 September 2013

Document identifier: PESD18VF1BL

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

16. Contents

1 General description . . . . . . . . . . . . . . . . . . . . . . .1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

4 Quick reference data . . . . . . . . . . . . . . . . . . . . . .1

5 Pinning information. . . . . . . . . . . . . . . . . . . . . . .1

6 Ordering information . . . . . . . . . . . . . . . . . . . . . .2

7 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

9 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .3

10 Application information. . . . . . . . . . . . . . . . . . . .6

11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8

14 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9

14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9

14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

15 Contact information. . . . . . . . . . . . . . . . . . . . . .10