BYS10-25 thru BYS10-45
Vishay General Semiconductor
Document Number: 86013
Revision: 21-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 25 V to 45 V
IFSM 40 A
VF0.50 V
TJ max. 150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYS10-25 BYS10-35 BYS10-45 UNIT
Device marking code BYS 025 BYS 035 BYS 045
Maximum repetitive peak reverse voltage VRRM 25 35 45 V
Maximum average forward rectified current IF(AV) 1.5 A
Peak forward surge current single half sine-wave
superimposed on rated load
8.3 ms
10 ms IFSM 40
30 A
Junction and storage temperature range TJ, TSTG - 65 to + 150 °C
BYS10-25 thru BYS10-45
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 86013
Revision: 21-Jan-08
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYS10-25 BYS10-35 BYS10-45 UNIT
Maximum instantaneous forward voltage (1) 1.0 A VF 500 mV
Maximum DC reverse current (1) VRRM TJ = 25 °C
TJ = 100 °C IR
500
10
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYS10-25 BYS10-35 BYS10-45 UNIT
Maximum thermal resistance - junction lead RθJL 25 °C/W
Maximum thermal resistance - junction ambient RθJA
150 (1)
125 (2)
100 (3)
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYS10-45-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYS10-45-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYS10-45HE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel
BYS10-45HE3/TR3 (1) 0.064 TR3 7500 13" diameter plastic tape and reel
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
80400 120 160
0
1
2
3
4
7
200
5
6
BYS10-25
BYS10-35
BYS10-45
R
thJA
= 25 K/W
R
thJA
= 100 K/W
Junction Temperature (°C)
P
R
- Max. Reverse Power Dissipation (W)
Figure 2. Max. Reverse Current vs. Junction Temperature
80400 120 160
0.1
1
10
100
1000
200
VR = VRRM
Junction Temperature (°C)
Reverse Current (mA)
BYS10-25 thru BYS10-45
Vishay General Semiconductor
Document Number: 86013
Revision: 21-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Max. Average Forward Current vs. Ambient Temperature
0
0
0.4
0.8
1.2
1.6
2.0
40 80 120 160 200
BYS10-25
BYS10-35
BYS10-45
Ambient Temperature (°C)
Average Forward Current (A)
VR = VRRM, Half Sine-Wave, RthJA = 25 K/W
0
0
0.4
0.8
1.2
1.6
2.0
40 80 120 160 200
100 K/W
125 K/W
150 K/W
Ambient Temperature (°C)
Average Forward Current (A)
VR = 0 V, Half Sine-Wave
RthJA = 25 K/W
Figure 5. Max. Forward Current vs. Forward Voltage
Figure 6. Diode Capacitance vs. Reverse Voltage
0 0.4 0.81.2 1.6
0.01
0.1
1
10
100
2.0
T
J
= 150 °C
T
J
= 25 °C
Forward Voltage (V)
Forward Current (A)
0.01 0.1 1 10 100
0.1
1
10
100
t - Heatin
g
Time (s)
Transient Thermal Impedance (°C/W)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208
(5.28) REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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