Preliminary Technical Information IXYL60N450 High Voltage XPTTM IGBT VCES = 4500V IC110 = 38A VCE(sat) 3.30V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M VGES VGEM 4500 4500 V V Continuous Transient 20 30 V V IC25 IC110 ICM TC = 25C TC = 110C TC = 25C, 1ms 90 38 680 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125C, RG = 4.7 Clamped Inductive Load ICM = 120 1500 A V PC TC = 25C 417 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 40..120 / 9..27 N/lb 4000 V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60 Hz, RM, t = 1min Weight G E C G = Gate C = Collector Isolated Tab E = Emitter Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 4500 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = 4000V, VGE = 0V Note 1, TJ = 90C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 125C (c) 2016 IXYS CORPORATION, All Rights Reserved V Applications 5.0 V 25 A A 300 nA 3.30 V V 75 2.64 3.46 Low Gate Drive Requirement High Power Density Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100578A(4/16) IXYL60N450 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 32 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres RGi IC = 60A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf 54 S 7530 pF 270 pF 115 pF Resistive Switching Times, TJ = 25C IC = 60A, VGE = 15V VCE = 960V, RG = 4.7 Resistive Switching Times, TJ = 125C IC = 60A, VGE = 15V VCE = 960V, RG = 4.7 366 nC 48 nC 138 nC 55 ns 450 ns A U S A2 R T Q1 D R1 4 1 3 2 L1 L b1 c A1 b e1 b2 e 1 = Gate 2 = Source 3 = Drain 4 = Isolated 450 ns 1360 ns 60 ns 664 ns A 0.190 0.205 4.83 5.21 A1 0.102 0.118 2.59 3.00 510 ns A2 0.046 0.055 1.17 1.40 1070 ns b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 RthJC 0.30 C/W RthCS Q E 5.0 Integrated Gate Input Resistance Qg(on) Qge ISOPLUS i5-PakTM (IXYL) Outline 0.15 C/W Notes: 1. Pulse test, t < 300s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. SYM INCHES MIN MAX MILLIMETER MIN MAX e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 3.81 BSC L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYL60N450 Fig. 1. Output Characteristics @ TJ = 25C Fig. 2. Extended Output Characteristics @ TJ = 25C 120 VGE = 25V 19V 15V 13V 11V 100 250 11V I C - Amperes 9V 80 I C - Amperes VGE = 25V 19V 15V 13V 300 60 7V 40 200 150 9V 100 20 50 7V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 120 2.2 VGE = 25V 19V 15V 13V 11V 25 VGE = 15V 2.0 VCE(sat) - Normalized 1.8 80 I C - Amperes 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125C 100 15 VCE - Volts VCE - Volts 9V 60 7V 40 I C = 120A 1.6 1.4 I C = 60A 1.2 1.0 0.8 I C = 30A 20 0.6 5V 0 0.4 0 1 2 3 4 5 6 -50 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 50 75 100 125 150 Fig. 6. Input Admittance 200 180 TJ = 25C 6 160 140 I C - Amperes 5 V CE - Volts 25 TJ - Degrees Centigrade I C = 120A 4 3 60A 120 100 80 60 TJ = 125C 25C 40 2 30A - 40C 20 1 0 6 7 8 9 10 11 12 VGE - Volts (c) 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXYL60N450 Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 90 TJ = - 40C VCE = 1000V 14 I C = 60A 80 I G = 10mA 12 25C 60 VGE - Volts g f s - Siemens 70 125C 50 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 I C - Amperes 200 250 300 350 400 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 140 100,000 f = 1 MHz 120 C ies 10,000 100 I C - Amperes Capacitance - PicoFarads 150 QG - NanoCoulombs 1,000 C oes 80 60 40 100 TJ = 125C Cres RG = 4.7 dv / dt < 10V / ns 20 0 10 0 5 10 15 20 25 30 35 500 40 1000 1500 2000 2500 3000 3500 4000 4500 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: Y_60N450(H9-645) 11-21-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.