© 2016 IXYS CORPORATION, All Rights Reserved
IXYL60N450 VCES = 4500V
IC110 = 38A
VCE(sat) 


3.30V
DS100578A(4/16)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 4500 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = 4000V, VGE = 0V 25 μA
Note 1, TJ = 90°C 75 μA
IGES VCE = 0V, VGE = ±20V ±300 nA
VCE(sat) IC= 60A, VGE = 15V, Note 1 2.64 3.30 V
TJ = 125°C 3.46 V
High Voltage
XPTTM IGBT
G = Gate E = Emitter
C = Collector
ISOPLUS i5-PakTM
GE
CIsolated Tab
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 4500 V
VCGR TJ= 25°C to 150°C, RGE = 1M 4500 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 90 A
IC110 TC= 110°C 38 A
ICM TC= 25°C, 1ms 680 A
SSOA VGE = 15V, TVJ = 125°C, RG = 4.7 ICM = 120 A
(RBSOA) Clamped Inductive Load 1500 V
PCTC= 25°C 417 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force 40..120 / 9..27 N/lb
VISOL 50/60 Hz, RM, t = 1min 4000 V~
Weight 8 g
(Electrically Isolated Tab)
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYL60N450
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ISOPLUS i5-PakTM (IXYL) Outline
1 = Gate
2 = Source
3 = Drain
4 = Isolated
SYM INCHES MILLIMETER
MIN MAX MIN MAX
A 0.190 0.205 4.83 5.21
A1 0.102 0.118 2.59 3.00
A2 0.046 0.055 1.17 1.40
b 0.045 0.055 1.14 1.40
b1 0.063 0.072 1.60 1.83
b2 0.058 0.068 1.47 1.73
c 0.020 0.029 0.51 0.74
D 1.020 1.040 25.91 26.42
E 0.770 0.799 19.56 20.29
e 0.150 BSC 3.81 BSC
e1 0.450 BSC 11.43 BSC
L 0.780 0.820 19.81 20.83
L1 0.080 0.102 2.03 2.59
Q 0.210 0.235 5.33 5.97
Q1 0.490 0.513 12.45 13.03
R 0.150 0.180 3.81 4.57
R1 0.100 0.130 2.54 3.30
S 0.668 0.690 16.97 17.53
T 0.801 0.821 20.34 20.85
U 0.065 0.080 1.65 2.03
ES
b1
D
b2
Q
Q1
U
T
A1
e1
c
R
R1
A2
L1
L
13
2
4
b
A
e
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 60A, VCE = 10V, Note 1 32 54 S
Cies 7530 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 270 pF
Cres 115 pF
RGi Integrated Gate Input Resistance 5.0
Qg(on) 366 nC
Qge IC = 60A, VGE = 15V, VCE = 1000V 48 nC
Qgc 138 nC
td(on) 55 ns
tr 450 ns
td(off) 450 ns
tf 1360 ns
td(on) 60 ns
tr 664 ns
td(off) 510 ns
tf 1070 ns
RthJC 0.30 °C/W
RthCS 0.15 °C/W
Resistive Switching Times, TJ = 125°C
IC = 60A, VGE = 15V
VCE = 960V, RG = 4.7
Resistive Switching Times, TJ = 25°C
IC = 60A, VGE = 15V
VCE = 960V, RG = 4.7
Notes:
1. Pulse test, t < 300s, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2016 IXYS CORPORATION, All Rights Reserved
IXYL60N450
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25º C
0
50
100
150
200
250
300
0 5 10 15 20 25
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
19V
15V
13V
7V
9V
11V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
120
0123456
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 120A
I
C
= 30A
I
C
= 60A
Fig. 5. Collec to r-to-Em itter Voltage
vs. Gate -to-Emitter Voltage
1
2
3
4
5
6
7
6 7 8 9 101112131415
VGE - Volts
VCE - Volts
I
C
= 120A
T
J
= 25ºC
60A
30A
Fig. 6. Input Admitta nce
0
20
40
60
80
100
120
140
160
180
200
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5
VGE - Volts
IC
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYL60N450
Fig. 7. Transconducta nce
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
500 1000 1500 2000 2500 3000 3500 4000 4500
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 4.7Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1000V
I
C
= 60A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Cies
Coes
Cres
IXYS REF: Y_60N450(H9-645) 11-21-13
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- K / W
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.