Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BVDSS 60V
▼ Single Drive Requirement RDS(ON) 36mΩ
▼ Surface Mount Package ID25A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W
Rthj-a 40 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
201105254
RoHS-compliant Product
1
-55 to 150
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Drain-Source Voltage 60
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V 25
Parameter Rating
AP9971GS/P-HF
Continuous Drain Current, VGS @ 10V 16
Linear Derating Factor 0.31
Pulsed Drain Current180
Total Power Dissipation 39
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9971GP) are
available for low-profile applications.
GDSTO-263(S)
GDSTO-220(P)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 36 mΩ
VGS=4.5V, ID=12A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 17 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=18A - 18 30 nC
Qgs Gate-Source Charge VDS=48V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC
td(on) Turn-on Delay Time2VDS=30V - 9 - ns
trRise Time ID=18A - 24 - ns
td(off) Turn-off Delay Time RG=3.3Ω-26-ns
tfFall Time VGS=10V - 7 - ns
Ciss Input Capacitance VGS=0V - 1700 2700 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=25A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=18A, VGS=0V, - 37 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 38 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board
AP9971GS/P-HF
A
P9971GS/P-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.31 trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
25
30
35
40
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=18A
TC=25oC
0
20
40
60
80
100
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
VG=3.0V
TC=25oC10V
7.0V
5.0V
4.5V
0
10
20
30
40
50
60
70
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.0V
10V
7.0V
5.0V
4.5V
0.0
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG=10V
ID=18A
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.6
1
1.4
1.8
2.2
2.6
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
VGS(th) (V)
AP9971GS/P-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
0.31 trr
Qrr
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Crss
Coss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.0
2
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
10us
100us
1ms
10ms
100ms
DC
0
2
4
6
8
10
12
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =30V
VDS =38V
VDS =48V
I
D=18A
