Ordering number:ENN6443 N-Channel Silicon MOSFET MCH3401 Ultrahigh-Speed Switching Applications Features Package Dimensions * Low ON resistance. * Ultrahigh-speed swithcing. * 2.5V drive. unit:mm 2167 0.25 [MCH3401] 0.3 0.15 1 2.1 1.6 3 2 0.25 0.65 0.85 2.0 0.15 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Conditions Ratings Unit VDSS VGSS 30 V 10 V ID 1.4 A Drain Current (pulse) IDP PW10s, duty cycle1% Allowable Power Dissipation Mounted on a ceramic board (900mm2x0.8mm) Channel Temperature PD Tch Storage Temperature Tstg 5.6 A 1 150 W C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) ID=1mA, VGS=0 Ratings min 1.6 RDS(on)1 RDS(on)2 ID=400mA, VGS=2.5V Output Capacitance Reverse Transfer Capacitance Unit V 10 A 10 A 1.3 V 250 325 m 310 435 m VGS=8V, VDS=0 VDS=10V, ID=700mA ID=700mA, VGS=4V Ciss max 30 0.4 Input Capacitance typ VDS=30V, VGS=0 VDS=10V, ID=1mA | yfs | Static Drain-to-Source On-State Resistance Conditions 2.3 S 90 pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 50 pF Crss VDS=10V, f=1MHz 20 pF Marking : KA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2455 No.6443-1/4 MCH3401 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ max Unit td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 13 ns td(off) See specified Test Circuit 28 ns tf See specified Test Circuit 20 ns nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 6 1 nC 2 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A Diode Forward Voltage VSD IS=1.4A, VGS=0 0.9 1.2 V Switching Time Test Circuit VDD=15V VIN 4V 0V ID=700mA RL=21.4 VIN D VOUT PW=10s D.C.1% G P.G 50 MCH3401 S ID -- VDS VDS=10V 1.8 VGS=1.5V 0.4 1.0 0.8 0.6 C --25C 0.6 1.2 Ta = 0.4 0.2 25 0.8 1.4 75 C V Drain Current, ID - A 1.6 8.0 Drain Current, ID - A 1.0 ID -- VGS 2.0 V 2.0 6.0 1.2 3.0 V 2.5 V V4 .0V 1.4 0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS - V 0.9 0 1.0 1.5 2.0 Ta=25C 2.5 IT01600 RDS(on) -- Ta 500 450 450 0.7A 400 Static Drain-to-Source On-State Resistance, RDS (on) - m Static Drain-to-Source On-State Resistance, RDS (on) - m 1.0 Gate-to-Source Voltage, VGS - V RDS(on) -- VGS 500 0.5 IT01599 ID=0.4A 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS - V 9 10 IT01601 400 V 2.5 S= G V A, 0V 0.4 =4. I D= GS V , A 0.7 I D= 350 300 250 200 150 100 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta - C 120 140 160 IT01602 No.6443-2/4 MCH3401 yfs -- ID 7 5 2 Ta C 1.0 25 C 75 7 5 3 1.0 7 5 3 2 0.1 7 5 3 2 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.8 1.0 1.2 1.4 IT01604 Ciss, Coss, Crss -- VDS f=1MHz tr Ciss, Coss, Crss - pF 2 tf td(on) 10 0.6 3 td(off) 2 0.4 Diode Forward Voltage, VSD - V 5 3 0.2 1000 7 5 VDD=15V VGS=4V 7 0 5 7 10 IT01603 SW Time -- ID 100 Switching Time, SW Time - ns 2 Ta= 75 25C C --25 C C 25 =-- Drain Current, ID - A 7 5 3 Ciss 100 7 5 Coss 3 Crss 2 10 7 5 3 2 2 1.0 1.0 0.1 2 3 5 7 2 1.0 3 Drain Current, ID - A 5 0 10 7 5 VDS=10V ID=1.4A 9 3 2 Drain Current, ID - A 8 7 6 5 4 3 2 0 0 1.0 2.0 3.0 4.0 5.0 Total Gate Charge, Qg - nC 6.0 IT01607 15 10 20 25 10s 1m s 10 ID=1.4A DC 7 5 3 2 0.1 7 5 30 IT01606 ASO IDP=5.6A 1.0 3 2 1 5 Drain-to-Source Voltage, VDS - V IT01605 VGS -- Qg 10 Gate-to-Source Voltage, VGS - V VGS = 0 3 3 0.1 0.01 10 m s 0m s op era tio Operation in this area is limited by RDS(on). Ta=25C Single pulse 0.01 Mounted on a ceramic 2 3 5 7 1.0 0.1 n board (900mm2x0.8mm) 2 3 5 7 10 2 Drain-to-Source Voltage, VDS - V 3 5 7 100 IT01608 PD -- Ta 1.2 Allowable Power Dissipation, PD - W IF -- VSD 10 7 5 VDS=10V Forward Current, IF - A Forward Transfer Admittance, | yfs | - S 10 1.0 M ou nt 0.8 ed on ac er am ic 0.6 bo ar d (9 00 0.4 m m2 x0 .8 0.2 m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 IT01609 No.6443-3/4 MCH3401 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6443-4/4