Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.4 A
IDM Pulsed Drain Current -24
PD @TA = 25°C Power Dissipation 1.25
PD @TA = 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter Max. Units
RθJA Maximum Junction-to-Ambient100 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
HEXFET® Power MOSFET
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3TM, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
lUltra Low On-Resistance
l P-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLow Gate Charge
lLead-Free
lRoHS Compliant, Halogen-Free
VDSS RDS(on) max (mW) ID
-30V 98@VGS = -10V -3.0A
165@VGS = -4.5V -2.6A
S
G1
2
D3
Micro3TM
IRLML5203PbF
Form Quantity
IRLML5203TRPbF Micro3
™
(SOT-23) Tape and Reel 3000 IRLML5203TRPbF
Package Type
Standard Pack
Orderable Part NumberBase Part Number
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V
trr Reverse Recovery Time ––– 17 26 ns TJ = 25°C, IF = -1.3A
Qrr Reverse Recovery Charge ––– 12 18 nC di/dt = -100A/μs
Source-Drain Ratings and Characteristics
A
-24



-1.3
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 98 VGS = -10V, ID = -3.0A
––– ––– 165 VGS = -4.5V, ID = -2.6A
VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 3.1 ––– ––– S VDS = -10V, ID = -3.0A
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -5.0 VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
QgTotal Gate Charge ––– 9.5 14 ID = -3.0A
Qgs Gate-to-Source Charge ––– 2.3 3.5 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– 1.6 2.4 VGS = -10V
td(on) Turn-On Delay Time ––– 12 ––– VDD = -15V
trRise Time ––– 18 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 88 ––– RG = 6.0Ω
tfFall Time ––– 52 ––– VGS = -10V
Ciss Input Capacitance ––– 510 ––– VGS = 0V
Coss Output Capacitance ––– 71 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 43 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
3.0A
0.01
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-2.7V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-2.70V
0.1
1
10
100
2.0 3.0 4.0 5.0 6.0 7.0
V = -15V
20μs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 4 8 12 16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-3.0A
V =-15V
DS
V =-24V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
200
400
600
800
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0 4 8 12 16
-ID , Drain Current (A)
0.00
0.10
0.20
0.30
0.40
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -10V
VGS = -4.5V
4.0 6.0 8.0 10.0 12.0 14.0 16.0
-VGS, Gate -to -Source Voltage (V)
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -3.0A
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
0
10
20
30
Power (W)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
-VGS(th) , Variace ( V )
ID = -250μA
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 B SC
MILLIMETERS
MIN
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MI NMAX MAX
.036
.0375 B SC
DIME NSI ONS
INCHES
b0.30
bbb
0.15
.008
ccc .006
0.25 BS CL1
L0.40 0.60
.0118 B SC
aaa
0.20
.004
0° 8° 8°0°
2.80
1.20
0
E1
E
D5
6
3
12 ccc C B A
B5
6
e
e1
A2
A
A1
bbb C A B
3X b aaa C
3 S URF 0
3X L
L1
H4
7
2.10
e1 1.90 BSC .075 B SC
.0119
.0032
.111
.083
.048 .055
.119
.103
.0196
.0078
.0039
.044
.0004
.035 .040
.0236.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
R E COMMENDE D F OOT PRINT
3X
3X
NOT ES
1. DIME NS IONING AND T OLE RANCING PE R AS ME Y14.5M-1994.
4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5 D AT U M A AND B T O B E DE T E RMINE D AT DAT UM P LANE H.
6 D I ME NS I ONS D AN D E 1 AR E ME AS UR E D AT DAT U M P L ANE H .
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLL ING DIMENSION: MILLIMET ER.
7 DIMENSION L IS THE LEAD LENGTH FOR S OLDERING T O A SUBSTRATE.
8. OUT L INE CONF OR MS TO JE DEC OU T LINE T O-236AB .
F = IRLML6401
A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
ASSEMBLY LOT CODE
LEAD-FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006
7
6
2010 0
2009 9
YEAR Y
C03
WORK
WEEK
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WORK
WEEK W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30
C
B
D
50 X
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WIRE
HALOGEN FREE
PART NUMBER
52 Z
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
W = IRFML8244
V = IRLML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Y = IRLML2246
X = IRLML2244
Z = IRFML9244
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML5203PbF
MS L 1
(per JEDE C
J-S T D-020D
††
)
RoHS compliant
Yes
†
Qualification level
Cons umer
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level Micro3™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
•
Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 8.
•
Added Qualification table -Qual level "Consumer" on page 10.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/28/2014